• Study Resource
  • Explore Categories
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
DMOS dual full bridge driver with PWM current controller
DMOS dual full bridge driver with PWM current controller

... RDS(on) = 0.73 Ω (typical value @ 25 °C), with intrinsic fast freewheeling diode. Cross conduction protection is achieved using a dead time (td = 1 µs typical) between the switch off and switch on of two power MOS in one leg of a bridge. Using N-channel power MOS for the upper transistors in the bri ...
Higher Engineering Science Electronics and Control Book 2 of 3
Higher Engineering Science Electronics and Control Book 2 of 3

3.5.4. Contact resistance to a thin semiconductor layer
3.5.4. Contact resistance to a thin semiconductor layer

AYA DAC - Audiostereo.pl
AYA DAC - Audiostereo.pl

CGD15HB62LP
CGD15HB62LP

... optimized companion product. Overlap protection is provided to prevent both the high side and low side gates from turning on simultaneously. The overlap protection should not be used as a dead time generator. • FAULT Signal: The fault signal is a differential output4 with a maximum drive strength of ...
Exp_Simplecircuits
Exp_Simplecircuits

MS Word - DXing.info
MS Word - DXing.info

Phy221 Lab 3
Phy221 Lab 3

... blue lines. Similarly, along the bottom there are two more rows of 25 contacts below the red lines, and two more rows of 25 contacts above the blue lines. These 8 rows are often used as a way to distribute power to the circuit. For example, if your power supply is set to 6.0 V or you have a 6.0 V b ...
6. Organization, training and methodological support of students` self
6. Organization, training and methodological support of students` self

... Points in total (all course) ...
references - IEEE Taipei Section
references - IEEE Taipei Section

Ideal Transformers
Ideal Transformers

ZXCT1009 - Diodes Incorporated
ZXCT1009 - Diodes Incorporated

... An additional resistor, RLIM can be added in series with ROUT (as below), to limit the current from IOUT. Any circuit connected to VOUT will be protected from input voltage transients. This can be of particular use in automotive applications where load dump and other common transients need to be con ...
novel current line sensor based on matched optocouplers for active
novel current line sensor based on matched optocouplers for active

3-28 Circuits, Current and Potential, Capacitors
3-28 Circuits, Current and Potential, Capacitors

Lecture 2
Lecture 2

LM4041  PRECISION MICROPOWER SHUNT VOLTAGE REFERENCES Description
LM4041 PRECISION MICROPOWER SHUNT VOLTAGE REFERENCES Description

... device is available in the small outline SOT23 and SC70-5 surface mount packages which are ideal for applications where space saving is important. Both packages are available to 0.5% C grade and 1% D grade for precision applications. Excellent performance is maintained over the 60µA to 12mA operatin ...
London Model Railroad Group SCR Throttle
London Model Railroad Group SCR Throttle

Using equivalence resistance to calculate current
Using equivalence resistance to calculate current

... Which of the following statements about the earth wire in an electric iron is/are correct? (1) The earth wire should be connected to the metal body of the iron (2) If the iron is working properly, no current passes through the earth wire. (3) In case the neutral wire is broken, the earth wire provid ...
Programmable AC/DC Electronic load MODEL 63800 SERIES
Programmable AC/DC Electronic load MODEL 63800 SERIES

... When testing battery chargers or other current source products, the output current changes according to the battery voltage (i.e. the output current varies with the output voltage). In these cases the loads CV mode is designed to force changes in output voltage allowing the load to be used to test b ...
- V
- V

Agricultural Electricity
Agricultural Electricity

... • The pressure/force pushing the electrons through the material. • Similar to water pressure in a water piping system. • Supplied by the generator. • Symbol= E or V ...
Lab 4 Non-ideal meters and some review
Lab 4 Non-ideal meters and some review

... Part 5. A non-ideal voltmeter. Recall that to measure the voltage drop across a given resistor, you place a voltmeter in parallel with it. The resistance of the voltmeter should be large so that it does not change significantly the current through the resistor (and in turn the voltage drop across th ...
VISHAY IRF71 datasheet
VISHAY IRF71 datasheet

FR014H5JZ (14mΩ, -30V) High-Side Reverse Bias / Reverse Polarity Protector
FR014H5JZ (14mΩ, -30V) High-Side Reverse Bias / Reverse Polarity Protector

... qualification devices, where the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. It is intended to indicate the device’s ability to withstand transient events that exceed the recommended operating voltage rating. Specification is based on qualification devices tested ...
Data Sheet  Features General Description
Data Sheet Features General Description

... Ground. The exposed pad is soldered to PCB and connected to GND plant for good power dissipation Enable Input. EN is an input when the regulator on or off. When left unconnected, EN pin is pulled to VDD by the internal pull up resistor Power input VIN provides the input power to the regulator. Conne ...
< 1 ... 879 880 881 882 883 884 885 886 887 ... 1285 >

Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
  • studyres.com © 2026
  • DMCA
  • Privacy
  • Terms
  • Report