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MC34164 MC33164 Micropower Undervoltage Sensing Circuits
MC34164 MC33164 Micropower Undervoltage Sensing Circuits

... the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters ...
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... o The symbol for electrical power is P. The unit of measure for electric power is watts and the symbol for watts is W  Electric power can be calculated by multiplying the total current (I) in a circuit and the total voltage (V) across a circuit.  Formula – Electric power - P= current x voltage = I ...
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... internal compensation, which minimize required external components and eliminate the need for adjustments to the device itself. The major considerations in applying this device are the external problems of layout and heat control which have already been discussed. In circuit situations employing the ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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