VNQ860-E
... where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet. The power dissipation associated to RGNG during reverse polarity condition is: PD = (-VCC)2/RGND This resistor can be shared by several different ICs. In such case IS val ...
... where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet. The power dissipation associated to RGNG during reverse polarity condition is: PD = (-VCC)2/RGND This resistor can be shared by several different ICs. In such case IS val ...
FIN1108 — LVDS 8-Port, High-Speed Repeater FIN 1108 — LVD
... VIC=+0.05V, + 1.2V, or VCC - 0.05V ...
... VIC=+0.05V, + 1.2V, or VCC - 0.05V ...
performance analysis of modular multilevel dc-dc converter
... Mode.1 [t0-t1]: Before t1, the switches S11,S14,S21, andS24are in the turn-on state to deliver the power to the secondary side. The output diodes Do11 and Do21 are conducted and the output diodes Do12 and Do22 are reverse biased. The flying capacitor Cf is in parallel with the input divided capacito ...
... Mode.1 [t0-t1]: Before t1, the switches S11,S14,S21, andS24are in the turn-on state to deliver the power to the secondary side. The output diodes Do11 and Do21 are conducted and the output diodes Do12 and Do22 are reverse biased. The flying capacitor Cf is in parallel with the input divided capacito ...
Audio level control with resistive optocouplers.
... Controlling the level of an audio signal by means of an applied voltage or current has always been somewhat problematical but often desirable, particularly when it is necessary to control a circuit from a computer. This application note deals with voltage or current controlled attenuators using opto ...
... Controlling the level of an audio signal by means of an applied voltage or current has always been somewhat problematical but often desirable, particularly when it is necessary to control a circuit from a computer. This application note deals with voltage or current controlled attenuators using opto ...
Activity 1.2.3 Electrical Circuits – Simulation
... The relationship between current, voltage, and resistance within an electrical circuit was developed by Georg Simon Ohm and is known today as Ohm’s law. Ohm’s law states that the direct current flowing in an electric circuit is directly proportional to the voltage applied to the circuit. In other w ...
... The relationship between current, voltage, and resistance within an electrical circuit was developed by Georg Simon Ohm and is known today as Ohm’s law. Ohm’s law states that the direct current flowing in an electric circuit is directly proportional to the voltage applied to the circuit. In other w ...
A Voltage-Controlled Filter
... alternates from standby to full-power mode by varying the bias voltage on this same external resistor. This op amp is capable of operating from 73 kHz, consuming only 5 µA, to as fast as 4.6 MHz, consuming only 425 µA. The input offset voltage is relatively independent and therefore is not affected ...
... alternates from standby to full-power mode by varying the bias voltage on this same external resistor. This op amp is capable of operating from 73 kHz, consuming only 5 µA, to as fast as 4.6 MHz, consuming only 425 µA. The input offset voltage is relatively independent and therefore is not affected ...
ECOTAP VPD The new compact class for distribution transformers
... In the case of wind turbines, voltage regulation transformers can be combined with all drive-train concepts, such as asynchronous generators or full-scale inverters. The voltage regulation transformer can either run on its own or be integrated in the generation unit's regulation system. Given the v ...
... In the case of wind turbines, voltage regulation transformers can be combined with all drive-train concepts, such as asynchronous generators or full-scale inverters. The voltage regulation transformer can either run on its own or be integrated in the generation unit's regulation system. Given the v ...
Ultra-miniature, Highly Sensitive SPDT Relay for Signal
... between contacts with the same polarity applied to the same parts as those used for checking the dielectric strength. *3. This value was measured at a switching frequency of 120 operations/min and the criterion of contact resistance is 100 Ω. This value may vary depending on the switching frequency ...
... between contacts with the same polarity applied to the same parts as those used for checking the dielectric strength. *3. This value was measured at a switching frequency of 120 operations/min and the criterion of contact resistance is 100 Ω. This value may vary depending on the switching frequency ...
Synchronous close capacitor bank switching made easy
... Convert any bank to synchronous close. The unique design of the SmartClose capacitor switch includes six integral voltage sensors that detect the voltage waveform on both the capacitor side and the source side of each interrupter. A close command issued by a separate capacitor bank controller cause ...
... Convert any bank to synchronous close. The unique design of the SmartClose capacitor switch includes six integral voltage sensors that detect the voltage waveform on both the capacitor side and the source side of each interrupter. A close command issued by a separate capacitor bank controller cause ...
PQ_UNIT III
... be protected. It is connected “line to neutral” so that it only protects against normal mode transients. This illustrates the principles without complicating the diagram but should be considered as the minimum protection one would apply to protect the load. Frequently, surge suppressors will have su ...
... be protected. It is connected “line to neutral” so that it only protects against normal mode transients. This illustrates the principles without complicating the diagram but should be considered as the minimum protection one would apply to protect the load. Frequently, surge suppressors will have su ...
4.4.6. High Injection Effects
... voltage drop across the resistor to the internal diode voltage. Numerical Analysis and Comparison The numerical analysis is performed for an abrupt one-sided silicon p-n diode. The diode consists of a thin highly doped p-type region on top of a lower doped n-type substrate. Only the hole current is ...
... voltage drop across the resistor to the internal diode voltage. Numerical Analysis and Comparison The numerical analysis is performed for an abrupt one-sided silicon p-n diode. The diode consists of a thin highly doped p-type region on top of a lower doped n-type substrate. Only the hole current is ...
TPS40075 数据资料 dataSheet 下载
... The TPS40075 drives external N-channel MOSFETs using second generation Predictive Gate Drive to minimize conduction in the body diode of the low side FET and maximize efficiency. Pre-biased outputs are supported by not allowing the low side FET to turn on until the voltage commanded by the closed lo ...
... The TPS40075 drives external N-channel MOSFETs using second generation Predictive Gate Drive to minimize conduction in the body diode of the low side FET and maximize efficiency. Pre-biased outputs are supported by not allowing the low side FET to turn on until the voltage commanded by the closed lo ...
surge protective devices
... with emphasis on providing solution for electrical distribution and control. We specialize in the area of instruments, distribution & protection and power quality solution. With our present headquarter in Singapore and subsidiaries that are located in Australia, Malaysia, Philippines and representat ...
... with emphasis on providing solution for electrical distribution and control. We specialize in the area of instruments, distribution & protection and power quality solution. With our present headquarter in Singapore and subsidiaries that are located in Australia, Malaysia, Philippines and representat ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.