A high-voltage bipolar voltage-to-current converter (HVB-VIC)
... The Wilson current mirror formed by Q31 , Q32 , and Q17 reflects Q31 ’s collector current iC 31 to Q17 ’s collector current iC 17 . Note that iC 31 is a function of iC 8 , and the output current iout is a function of iC 17 . This is important because it allows the load to be grounded, and therefore, ...
... The Wilson current mirror formed by Q31 , Q32 , and Q17 reflects Q31 ’s collector current iC 31 to Q17 ’s collector current iC 17 . Note that iC 31 is a function of iC 8 , and the output current iout is a function of iC 17 . This is important because it allows the load to be grounded, and therefore, ...
TVS Diode Array SPA SP725 Datasheet
... 1. θ JA is measured with the component mounted on an evaluation PC board in free air 2. In automotive and battery operated systems, the power supply lines should be externally protected for load dump and reverse battery V+ and V- pins are connected to the same supply voltage source as the device or ...
... 1. θ JA is measured with the component mounted on an evaluation PC board in free air 2. In automotive and battery operated systems, the power supply lines should be externally protected for load dump and reverse battery V+ and V- pins are connected to the same supply voltage source as the device or ...
The time period or periodic time T of an alternating quantity is the
... The form factor is the ratio of a. average value to rms value b. rms value to average value c. peak value to average value d. peak value to rms value ans:b The peak factor is the ratio of a. average value to rms value b. rms value to average value c. peak value to rms value d. peak value to average ...
... The form factor is the ratio of a. average value to rms value b. rms value to average value c. peak value to average value d. peak value to rms value ans:b The peak factor is the ratio of a. average value to rms value b. rms value to average value c. peak value to rms value d. peak value to average ...
Analysis on an NPN Common-Emitter Amplifier
... The main purpose of a CE amplifier is to amplify an AC voltage. An amplifier without an AC input is known as a quiescent amplifier, or an amplifier which is resting. If the amplifier is resting, it has constant values of IC and VCE. The Q point is defined as a point on the DC load line that indicat ...
... The main purpose of a CE amplifier is to amplify an AC voltage. An amplifier without an AC input is known as a quiescent amplifier, or an amplifier which is resting. If the amplifier is resting, it has constant values of IC and VCE. The Q point is defined as a point on the DC load line that indicat ...
40 V to 400 V Uni-directional Current/Voltage/Power Monitoring
... load shorts to ground vs. sensing on the low-side. Often sensing load currents at bus voltages greater than 40 volts is needed. The INA226 from Texas Instruments cannot exceed a bus supply voltage of 36V. To that end, this design explores one possible solution for achieving current sensing at bus vo ...
... load shorts to ground vs. sensing on the low-side. Often sensing load currents at bus voltages greater than 40 volts is needed. The INA226 from Texas Instruments cannot exceed a bus supply voltage of 36V. To that end, this design explores one possible solution for achieving current sensing at bus vo ...
DOC
... For a basic P/N junction fabricated on a silicon wafer, the “N” region is the wafer itself. Electrical connection to the N region is made via the backside. The backside of the wafer contacts the wafer chuck and the wafer chuck is plugged into the collector socket of the transistor curve tracer. The ...
... For a basic P/N junction fabricated on a silicon wafer, the “N” region is the wafer itself. Electrical connection to the N region is made via the backside. The backside of the wafer contacts the wafer chuck and the wafer chuck is plugged into the collector socket of the transistor curve tracer. The ...
Design of a Head Mounted Display for Image
... Figure 3 shows the pixel structure chosen for the OLED. It consists of two n-type transistors, one for switching the pixel on and off, the other for driving the pixel when it is on. The OLED is equivalent to a diode, and therefore there are three diode equivalents in our pixel model, one for each co ...
... Figure 3 shows the pixel structure chosen for the OLED. It consists of two n-type transistors, one for switching the pixel on and off, the other for driving the pixel when it is on. The OLED is equivalent to a diode, and therefore there are three diode equivalents in our pixel model, one for each co ...
Fuzzy Logic Controller Based Perturb and Observe Maximum Power
... The state-space averaging technique is used to generate the low-frequency small-signal ac equations of the PWM DC-DC converter [13]. The buck converter is assumed to operate in a continuous conduction mode while switching between two states depending on the switch position (ON/OFF). In the first sta ...
... The state-space averaging technique is used to generate the low-frequency small-signal ac equations of the PWM DC-DC converter [13]. The buck converter is assumed to operate in a continuous conduction mode while switching between two states depending on the switch position (ON/OFF). In the first sta ...
S1610C
... 3. When terminating field wires, do not use more lead length than required. Excess lead length could result in insufficient wiring space for the signaling device. 4. Use care and proper techniques to position the field wires in the backbox so that they use minimum space and produce minimum stre ...
... 3. When terminating field wires, do not use more lead length than required. Excess lead length could result in insufficient wiring space for the signaling device. 4. Use care and proper techniques to position the field wires in the backbox so that they use minimum space and produce minimum stre ...
EXPERIMENT NO
... junction will be high. Such an operation is destructive and the diode gets damaged. Diodes can be designed with adequate power dissipation capabilities to operate in the breakdown region. One such diode is known as Zener diode. From the VI characteristics of the Zener diode, it is found that the ope ...
... junction will be high. Such an operation is destructive and the diode gets damaged. Diodes can be designed with adequate power dissipation capabilities to operate in the breakdown region. One such diode is known as Zener diode. From the VI characteristics of the Zener diode, it is found that the ope ...
Remote tripping - Schneider Electric
... The MN release opens the circuit breaker when its supply voltage drops to a value below 35 % of its rated voltage Un. Undervoltage tripping, combined with an emergency-off button, provides fail-safe tripping. The MN release is continuously supplied, i.e. if supply is interrupted: bb either voluntari ...
... The MN release opens the circuit breaker when its supply voltage drops to a value below 35 % of its rated voltage Un. Undervoltage tripping, combined with an emergency-off button, provides fail-safe tripping. The MN release is continuously supplied, i.e. if supply is interrupted: bb either voluntari ...
5A EXPERIMENT RC Circuits
... due to the electric charges is opposite in sign to the voltage of the battery. As the charge on the plates builds up, this back-voltage increases, opposing the action of the battery. As a consequence, the current flowing in the circuit decays, falling to zero when the back-voltage is exactly equal a ...
... due to the electric charges is opposite in sign to the voltage of the battery. As the charge on the plates builds up, this back-voltage increases, opposing the action of the battery. As a consequence, the current flowing in the circuit decays, falling to zero when the back-voltage is exactly equal a ...
Data Sheet - Soemtron.org
... 5. For low current operation, the AlGaAs HDSP-E10X series displays are recommended. They are tested at 1 mA dc/segment and are pin for pin compatible with the HDSP-E15X series. 6. For low current operation, the HER HDSP-335X series displays are recommended. They are tested at 2 mA dc/segment and are ...
... 5. For low current operation, the AlGaAs HDSP-E10X series displays are recommended. They are tested at 1 mA dc/segment and are pin for pin compatible with the HDSP-E15X series. 6. For low current operation, the HER HDSP-335X series displays are recommended. They are tested at 2 mA dc/segment and are ...
Series and Parallel circuits
... 6. Is the intensity of the light bulb higher or lower than when the circuit was in series? 7. Using the relationship obtained in 4. what does this mean concerning the current running through the light bulb? Is it higher or lower than in series? 8. Imagine that the flow of electron running through a ...
... 6. Is the intensity of the light bulb higher or lower than when the circuit was in series? 7. Using the relationship obtained in 4. what does this mean concerning the current running through the light bulb? Is it higher or lower than in series? 8. Imagine that the flow of electron running through a ...
Low Drop-Out (LDO) Linear Regulators: Design Considerations and
... Dropout voltage (Vdo): This is the difference between the minimum voltage the input DC supply can attain and the regulated output voltage. Input rail range: This is the input supply voltage range that can be regulated. Lower limit is dependent on the dropout voltage and upper limit depends on the ...
... Dropout voltage (Vdo): This is the difference between the minimum voltage the input DC supply can attain and the regulated output voltage. Input rail range: This is the input supply voltage range that can be regulated. Lower limit is dependent on the dropout voltage and upper limit depends on the ...
Transistor–transistor logic (TTL) is a class of digital circuits built from
... Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Since most BJTs are designed to maximize current gain in forward-active ...
... Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Since most BJTs are designed to maximize current gain in forward-active ...
Limits and hints how to turn off IGBTs with unipolar supply AN1401
... parasitic inductance Lσ2 raises the gate-emitter voltage VGE2' from the time t4 to time t5. Both cases introduce a negative feedback for the IGBT that slows the switching and, therefore, the switching losses increase. As a positive side effect this provides better controllability of a short-circuit ...
... parasitic inductance Lσ2 raises the gate-emitter voltage VGE2' from the time t4 to time t5. Both cases introduce a negative feedback for the IGBT that slows the switching and, therefore, the switching losses increase. As a positive side effect this provides better controllability of a short-circuit ...
7.6 mm (0.3 inch)/10.9 mm (0.43 inch) Seven Segment Displays
... 5. For low current operation, the AlGaAs HDSP-E10X series displays are recommended. They are tested at 1 mA dc/segment and are pin for pin compatible with the HDSP-E15X series. 6. For low current operation, the HER HDSP-335X series displays are recommended. They are tested at 2 mA dc/segment and are ...
... 5. For low current operation, the AlGaAs HDSP-E10X series displays are recommended. They are tested at 1 mA dc/segment and are pin for pin compatible with the HDSP-E15X series. 6. For low current operation, the HER HDSP-335X series displays are recommended. They are tested at 2 mA dc/segment and are ...
Analysis and Design of a High Voltage Flyback
... Flyback converters have been widely used because of their relative simplicity and their excellent performance for multoutput applications. They can save cost and volume compared with the other converters, especially in low power applications. In a flyback converter, a transformer is adopted to achie ...
... Flyback converters have been widely used because of their relative simplicity and their excellent performance for multoutput applications. They can save cost and volume compared with the other converters, especially in low power applications. In a flyback converter, a transformer is adopted to achie ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.