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THS1041 数据资料 dataSheet 下载
THS1041 数据资料 dataSheet 下载

... Supply voltage range: AVDD to AGND, DVDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 4 V AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 0.3 V AVDD to DVDD . . . . . . . . . ...
Over Voltage Protection
Over Voltage Protection

UG-470 - Analog Devices
UG-470 - Analog Devices

Functional Specification - EDMS
Functional Specification - EDMS

... common mode to +10 V versus earth on its negative output connexion point. This allows to detect any earthing leakage faulty condition, without the need to energise the circuit for allowing the detection system to operate. In Passive mode, when converter is ON-state only, a 10 Ohms earthing resistor ...
How to get the best ADC accuracy in STM32 microcontrollers
How to get the best ADC accuracy in STM32 microcontrollers

... device). A self-calibration feature is provided to enhance ADC accuracy versus environmental condition changes. In applications involving analog-to-digital conversion, ADC accuracy has an impact on the overall system quality and efficiency. To improve this accuracy, the errors associated with the AD ...
Speed Control of Shunt DC Motors
Speed Control of Shunt DC Motors

Interconnects - Oregon State EECS
Interconnects - Oregon State EECS

... Towards “communication-based” design  How to deal with latency?  Is synchronicity an absolute necessity? ...
Fundamentals of Low Current and Ultra
Fundamentals of Low Current and Ultra

PFC/JA-88-3 8 X-Ray  Response  of Silicon  Surface  Barrier ... Depth  is  not  Generally  the Depletion ...
PFC/JA-88-3 8 X-Ray Response of Silicon Surface Barrier ... Depth is not Generally the Depletion ...

... diodes) was also always within ±10%. The uncertainty in the filter transmissivities for the Si(Li) spectrometer led to the largest uncertainties in absolute responses.(+16%, -20% at 8 keV; and +24%, -32% at 17.5 keV). The overall uncertainty (taken to be the square root of the sum of the squares of ...
BFU520XR - NXP Semiconductors
BFU520XR - NXP Semiconductors

... © NXP Semiconductors N.V. 2014. All rights reserved. ...
AN103: Using the On-Chip Temperature Sensor
AN103: Using the On-Chip Temperature Sensor

Fairchild ChipFind - Manufacturer datasheet and components
Fairchild ChipFind - Manufacturer datasheet and components

... General Description The CD4007C consists of three complementary pairs of Nand P-channel enhancement mode MOS transistors suitable for series/shunt applications. All inputs are protected from static discharge by diode clamps to VDD and VSS. ...
Contents - Brunswick
Contents - Brunswick

2. Capacitor
2. Capacitor

... Parallel Plate Capacitor A parallel plate capacitor is a simple example of the factors affecting a capacitor. A simple capacitor can be made from two identical plates of conductive materials, separated a distance apart. The capacitance is then directly proportional to the area of the plates and inve ...
AVTRON ACCel500 COMMON BUS INVERTERS
AVTRON ACCel500 COMMON BUS INVERTERS

... PHONES IN THE VICINITY OF THE ACCel500 DRIVE. The ACCel500 Drive is an electronic device. Although it is designed to operate reliably in typical industrial environments, the ACCel500 Drive can be affected by radio and/or cell phone transmitters. It is possible to cause drive faults, inappropriate/un ...
Operational Amplifiers - Georgia Institute of Technology
Operational Amplifiers - Georgia Institute of Technology

Power Supplies
Power Supplies

Novel Full Bridge Topologies for VRM Applications
Novel Full Bridge Topologies for VRM Applications

... Multi-phase Buck is widely used in Voltage Regulator Modules design because of its low cost and simplicity. But this topology also has a lot of drawbacks. One of the most fundamental drawback is that it has narrow duty cycles when it operates at high switching frequency with low output voltage (for ...
RF Diode Design Guide
RF Diode Design Guide

1.6 V, Micropower 12-Bit ADC AD7466-KGD Known Good Die FEATURES
1.6 V, Micropower 12-Bit ADC AD7466-KGD Known Good Die FEATURES

... minimum in order to meet the maximum figure for the acquisition time. Delay from CS until SDATA is three-state disabled. Measured with the load circuit in Figure 2 and defined as the time required for the output to cross the VIH or VIL voltage. Data access time after SCLK falling edge. Measured with ...
2,4 GHz Power Amplifier with Cartesian Feedback for WLAN Maria Hofvendahl 2002-09-03 LiTH-ISY-EX-3254-2002
2,4 GHz Power Amplifier with Cartesian Feedback for WLAN Maria Hofvendahl 2002-09-03 LiTH-ISY-EX-3254-2002

... Presently there exist a great demand for wireless systems that achieve high data transmission rate for example cellular phones and wireless Internet. To ensure long battery stand-by time the power consumption needs to be low. As the number of users are increasing, the signal band has to be used in a ...
an area efficient 64-bit square root carry
an area efficient 64-bit square root carry

Basic Electrostatics System
Basic Electrostatics System

... front panel range-indicator LEDs will blink slowly when the batteries need to be replaced. When replacing batteries, do not touch any of the components or wires in the integrated circuit panel, since they are all static sensitive. Electrostatics Voltage Source (ES-9077) The ES-9077 is a high voltage ...
Josephson junctions as detectors for non-Gaussian noise B. Huard , H. Pothier
Josephson junctions as detectors for non-Gaussian noise B. Huard , H. Pothier

... allows for a good voltage bias of the junction and reduces the low-frequency cut-off of the high-pass filter associated with Rf and C. Resistors Rf = 202 Ω and Rb = 202 Ω were commercial surface mount NiCr resistors connected directly on the sample with silver epoxy. The sample holder was thermally a ...
PDF
PDF

... the alignment between the modulators and the WDM lasers. These effects need to be compensated. However, electro-optic tuning can compensate only for temperature variations of ~± 2.50C, while processor core activity on chip yields temperature fluctuations on the order of ±100C. Therefore, thermo-opti ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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