Design and Implementation of a 7-8 GHz Low-Noise Amplifier Sajid Zaheer
... Figure 3-2 FET ID/VDS output characteristic: simulation results. ............................................................ 29 ...
... Figure 3-2 FET ID/VDS output characteristic: simulation results. ............................................................ 29 ...
73S8014RN Smart Card Interface DATA SHEET
... The Teridian 73S8014RN is a single smart card (ICC) interface circuit, firmware compatible with 8024-type devices for configurations where only asynchronous cards must be supported. It is derived from the 73S8024RN industrystandard electrical interface. The 73S8014RN has been optimized to match most ...
... The Teridian 73S8014RN is a single smart card (ICC) interface circuit, firmware compatible with 8024-type devices for configurations where only asynchronous cards must be supported. It is derived from the 73S8024RN industrystandard electrical interface. The 73S8014RN has been optimized to match most ...
PAM8303C Description Pin Assignments
... Thermal protection on the PAM8303C prevents the device from damage when the internal die temperature exceeds +135°C. There is a 15°C tolerance on this trip point from device to device. Once the die temperature exceeds the set point, the device will enter the shutdown state and the outputs are disabl ...
... Thermal protection on the PAM8303C prevents the device from damage when the internal die temperature exceeds +135°C. There is a 15°C tolerance on this trip point from device to device. Once the die temperature exceeds the set point, the device will enter the shutdown state and the outputs are disabl ...
LF198JAN Monolithic Sample-and-Hold Circuits Monolithic General Description
... confusion among sample-and-hold users than any other parameter. The primary reason for this is that many users make the assumption that the sample and hold amplifier is truly locked on to the input signal while in the sample mode. In actuality, there are finite phase delays through the circuit creat ...
... confusion among sample-and-hold users than any other parameter. The primary reason for this is that many users make the assumption that the sample and hold amplifier is truly locked on to the input signal while in the sample mode. In actuality, there are finite phase delays through the circuit creat ...
2.7 V to 5.5 V, 250 µA, Rail-to-Rail Output nano AD5662
... the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance ...
... the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance ...
PAM8302A Description Pin Assignments
... The PAM8302A is a 2.5W Class-D mono audio amplifier. Its low THD+N feature offers high quality sound reproduction. The new filterless architecture allows the device to drive speakers directly instead of using low-pass output filters, therefore saving system cost and PCB area. With the same number of ...
... The PAM8302A is a 2.5W Class-D mono audio amplifier. Its low THD+N feature offers high quality sound reproduction. The new filterless architecture allows the device to drive speakers directly instead of using low-pass output filters, therefore saving system cost and PCB area. With the same number of ...
CD4066BC Quad Bilateral Switch
... RL = 10 kΩ to (VDD − VSS/2) VCC = V DD, VIS = VSS to VDD VDD = 10V ...
... RL = 10 kΩ to (VDD − VSS/2) VCC = V DD, VIS = VSS to VDD VDD = 10V ...
RG series: 1-phase solid state switching solutions
... CARLO GAVAZZI Automation Components. Specifications are subject to change without notice. Illustrations are for example only. Various connection configuartions are available in the RG series. Layout configurations are available either in E-type (Contactor configuartion) or U-type (SSR configuration) ...
... CARLO GAVAZZI Automation Components. Specifications are subject to change without notice. Illustrations are for example only. Various connection configuartions are available in the RG series. Layout configurations are available either in E-type (Contactor configuartion) or U-type (SSR configuration) ...
MAX8677C 1.5A Dual-Input USB/AC Adapter Charger and Smart Power Selector General Description
... The MAX8677C is an integrated 1-cell Li+ charger and Smart Power Selector™ with dual (DC and USB) power inputs. It can operate with either separate inputs for USB and AC adapter power*, or from a single input that accepts both. All power switches for charging and switching the load between battery a ...
... The MAX8677C is an integrated 1-cell Li+ charger and Smart Power Selector™ with dual (DC and USB) power inputs. It can operate with either separate inputs for USB and AC adapter power*, or from a single input that accepts both. All power switches for charging and switching the load between battery a ...
TAS5152 数据资料 dataSheet 下载
... may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affec ...
... may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affec ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.