Circuits
... How does the resistance of a wire compare to the resistance of a bulb? Measure the resistances to test your answer. NOTE: Most meters cannot measure very low resistance and display “0.00” when the resistance is lower than 0.01 . ...
... How does the resistance of a wire compare to the resistance of a bulb? Measure the resistances to test your answer. NOTE: Most meters cannot measure very low resistance and display “0.00” when the resistance is lower than 0.01 . ...
LM20146 6A, Adjustable Frequency Synchronous Buck Regulator
... part will terminate the present on-pulse, turn-on the low-side FET, and pull the PGOOD pin low. The low-side FET will remain on until either the FB voltage falls back into regulation or the zero cross detection is triggered which in turn tri-states the FETs. If the output reaches the UVP threshold t ...
... part will terminate the present on-pulse, turn-on the low-side FET, and pull the PGOOD pin low. The low-side FET will remain on until either the FB voltage falls back into regulation or the zero cross detection is triggered which in turn tri-states the FETs. If the output reaches the UVP threshold t ...
lds8620 preliminary
... In 1x mode, the device operates in linear mode and does not introduce switching noise back onto the supply. Recommended Layout In charge pump mode, the driver switches internally at a high frequency. It is recommended to minimize trace length to all four capacitors. A ground plane should cover the a ...
... In 1x mode, the device operates in linear mode and does not introduce switching noise back onto the supply. Recommended Layout In charge pump mode, the driver switches internally at a high frequency. It is recommended to minimize trace length to all four capacitors. A ground plane should cover the a ...
All-NbN digital-to-analog converters for a programmable voltage
... Current–voltage (I−V ) characteristics for all junction arrays in DAC chips were measured with and without microwave power. Figure 2(a) shows the I−V characteristics measured for five arrays in a 5-bit DAC chip at 4.2 K with microwave power. The TiNx barrier thickness for this chip was 35 nm. The ju ...
... Current–voltage (I−V ) characteristics for all junction arrays in DAC chips were measured with and without microwave power. Figure 2(a) shows the I−V characteristics measured for five arrays in a 5-bit DAC chip at 4.2 K with microwave power. The TiNx barrier thickness for this chip was 35 nm. The ju ...
Refractory Neuron Circuits
... potential. Sodium and potassium conductances are usually present at axon-hillock locations in biological neurons, and one can generate action potentials by injecting current at these locations. The circuit, therefore, bears some similarity to biological axon-hillock circuits. The second of our neuro ...
... potential. Sodium and potassium conductances are usually present at axon-hillock locations in biological neurons, and one can generate action potentials by injecting current at these locations. The circuit, therefore, bears some similarity to biological axon-hillock circuits. The second of our neuro ...
DACs
... A=αD D is dimensionless α sets both the full scale and the dimension of A. Example: α = IREF A = IREF D α = VREF A = VREF D ...
... A=αD D is dimensionless α sets both the full scale and the dimension of A. Example: α = IREF A = IREF D α = VREF A = VREF D ...
ρ π ρ
... be the nature of the charge left on Q? a. must be equal in magnitude to that on P b. must be negative c. must be positive d. must be greater in magnitude than that on P e. must be negative and less in magnitude than that on P Only positive charge can be left on Q that originates from positive charge ...
... be the nature of the charge left on Q? a. must be equal in magnitude to that on P b. must be negative c. must be positive d. must be greater in magnitude than that on P e. must be negative and less in magnitude than that on P Only positive charge can be left on Q that originates from positive charge ...
IQ: What it is, what it isn`t, and how to use it
... the output capacitor. When the inductor current reaches zero, all the energy has been Time (500 ns/div) delivered to the output; so the rectifying MOSFET turns off, and the IC goes into a sleep mode (phase #2). At this point, both MOSFETs are off (open), so the SW pin is in a state of high impedance ...
... the output capacitor. When the inductor current reaches zero, all the energy has been Time (500 ns/div) delivered to the output; so the rectifying MOSFET turns off, and the IC goes into a sleep mode (phase #2). At this point, both MOSFETs are off (open), so the SW pin is in a state of high impedance ...
LIS244AL - STMicroelectronics
... mass to be moved by means of an electrostatic test-force. The Self Test function is off when the ST pin is connected to GND. When the ST pin is tied at Vdd an actuation force is applied to the sensor, simulating a definite input acceleration. In this case the sensor outputs will exhibit a voltage ch ...
... mass to be moved by means of an electrostatic test-force. The Self Test function is off when the ST pin is connected to GND. When the ST pin is tied at Vdd an actuation force is applied to the sensor, simulating a definite input acceleration. In this case the sensor outputs will exhibit a voltage ch ...
- Saraswathi Velu College of Engineering
... 13. Justify the reasons for using current sources in integrated circuits. 14. What is the advantage of widlar current source over constant current source? 15. Mention the advantages of Wilson current source. 16. Define sensitivity. 17. What are the limitations in a temperature compensated zener-refe ...
... 13. Justify the reasons for using current sources in integrated circuits. 14. What is the advantage of widlar current source over constant current source? 15. Mention the advantages of Wilson current source. 16. Define sensitivity. 17. What are the limitations in a temperature compensated zener-refe ...
LP3871/LP3874 0.8-A Fast Ultra-Low Dropout Linear Regulators
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.