Single-Supply, 10MHz, Rail-to-Rail Output, Low-Noise, JFET Amplifier OPA141 OPA2141
... Junction-to-board characterization parameter (6) ...
... Junction-to-board characterization parameter (6) ...
semiconductor diodes
... source (-40, 0) [V]. To obtain a voltage bigger than 20V (absolute value) you will connect in series the two voltage sources from the double dc regulated power supply. Modifying the voltage VI in the domain [0, -40] [V] you will measure some pairs of (iD, vD). ...
... source (-40, 0) [V]. To obtain a voltage bigger than 20V (absolute value) you will connect in series the two voltage sources from the double dc regulated power supply. Modifying the voltage VI in the domain [0, -40] [V] you will measure some pairs of (iD, vD). ...
EE 1272327
... In order to reduce the volume and cost, it is always important to keep the shoot-through duty ratio constant. At the same time, a greater voltage boost for any given modulation index is desired to reduce the voltage stress across the switches. There are five modulation curves in this control method: ...
... In order to reduce the volume and cost, it is always important to keep the shoot-through duty ratio constant. At the same time, a greater voltage boost for any given modulation index is desired to reduce the voltage stress across the switches. There are five modulation curves in this control method: ...
EA25771777
... voltage of semiconductor device below output voltage, the zero potential of Q’s source side which makes it easy to drive Q and its simple structure. Therefore, satisfied teaching of advanced power electronics should be introduced by unity power factor and high efficiency by dc-dc boost converter. ...
... voltage of semiconductor device below output voltage, the zero potential of Q’s source side which makes it easy to drive Q and its simple structure. Therefore, satisfied teaching of advanced power electronics should be introduced by unity power factor and high efficiency by dc-dc boost converter. ...
Alternating Current Theory - JR Lucas
... where Z = R + j X, and Y = G + j B It is usual to express Z in cartesian form in terms of R and X, and Y in terms of G and B. The real part of the impedance Z is resistive and is usually denoted by a resistance R, while the imaginary part of the impedance Z is called a reactance and is usually denot ...
... where Z = R + j X, and Y = G + j B It is usual to express Z in cartesian form in terms of R and X, and Y in terms of G and B. The real part of the impedance Z is resistive and is usually denoted by a resistance R, while the imaginary part of the impedance Z is called a reactance and is usually denot ...
High-Power High-Performance Low
... affects PPR. Depending on the circuitry and the components, td can be fractions of a microsecond, i.e., td is a good part of the half-period. The open literature cites factor 1 only as detrimental to PPR. However, factor 2 can be quite as important. A rule of thumb is that, in relatively low-voltage ...
... affects PPR. Depending on the circuitry and the components, td can be fractions of a microsecond, i.e., td is a good part of the half-period. The open literature cites factor 1 only as detrimental to PPR. However, factor 2 can be quite as important. A rule of thumb is that, in relatively low-voltage ...
AN2349
... with a rectified current at double half-wave shape, as shown in Figure 17. This current shape will generate on the electrolytic capacitor an almost continuous voltage with a ripple value depending on the same capacitor value. In order to calculate the capacitor C4, the current flowing on the electro ...
... with a rectified current at double half-wave shape, as shown in Figure 17. This current shape will generate on the electrolytic capacitor an almost continuous voltage with a ripple value depending on the same capacitor value. In order to calculate the capacitor C4, the current flowing on the electro ...
3A High Output boost converter (Rev. D)
... The TPS61175 integrates a 40-V low side switch FET for up to 38-V output. The device regulates the output with current mode PWM (pulse width modulation) control. The PWM control circuitry turns on the switch at the beginning of each switching cycle. The input voltage is applied across the inductor a ...
... The TPS61175 integrates a 40-V low side switch FET for up to 38-V output. The device regulates the output with current mode PWM (pulse width modulation) control. The PWM control circuitry turns on the switch at the beginning of each switching cycle. The input voltage is applied across the inductor a ...
AP7217A
... without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in acco ...
... without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in acco ...
Chapter 2 - Resistive Circuits(PowerPoint Format)
... Resistance - Definition • Resistance is an intrinsic property of matter and is a measure of how much a device impedes the flow of current. • The greater the resistance of an object, the smaller the amount of current that will flow for a given applied voltage. • The resistance of an object depends o ...
... Resistance - Definition • Resistance is an intrinsic property of matter and is a measure of how much a device impedes the flow of current. • The greater the resistance of an object, the smaller the amount of current that will flow for a given applied voltage. • The resistance of an object depends o ...
Transformer Explanation
... "out of page/into page" type notation for i and v. Moreover, even if I did that, then the direction of these symbols would depend on which direction the coils are wound around the core. Adding this extra complication would not result in any increase in the understanding of how it works. So in the in ...
... "out of page/into page" type notation for i and v. Moreover, even if I did that, then the direction of these symbols would depend on which direction the coils are wound around the core. Adding this extra complication would not result in any increase in the understanding of how it works. So in the in ...
ELEC-110-01 Feeney - My SMCC - Southern Maine Community
... 2. Use Ohm’s Law and Kirchoff’s Laws to analyze series, parallel, and series-parallel circuits. 3. Explain and calculate power dissipation and total power requirements. 4. Identify open and short circuits in a given circuit. 5. Able to connect components in a series-parallel circuit. 6. Able to comp ...
... 2. Use Ohm’s Law and Kirchoff’s Laws to analyze series, parallel, and series-parallel circuits. 3. Explain and calculate power dissipation and total power requirements. 4. Identify open and short circuits in a given circuit. 5. Able to connect components in a series-parallel circuit. 6. Able to comp ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.