HEWLETT-PACKARD JOURNAL
... temperature fluctuations of about 5°F. Record shows typical instrument stability ...
... temperature fluctuations of about 5°F. Record shows typical instrument stability ...
AP1184 General Description Features
... The AP1184 regulator is a 5 terminal device designed specifically to provide extremely low dropout voltages comparable to the PNP type without the disadvantage of the extra power dissipation due to the base current associated with PNP regulators. This is done by bringing out the control pin of the r ...
... The AP1184 regulator is a 5 terminal device designed specifically to provide extremely low dropout voltages comparable to the PNP type without the disadvantage of the extra power dissipation due to the base current associated with PNP regulators. This is done by bringing out the control pin of the r ...
MAX4594–MAX4597 Low-Voltage, Single
... Power-Supply Sequencing and Overvoltage Protection Proper power-supply sequencing is recommended for all CMOS devices. Always apply V+ before applying analog signals or logic inputs, especially if the analog or logic signals are not current limited. If this sequencing is not possible, and if the ana ...
... Power-Supply Sequencing and Overvoltage Protection Proper power-supply sequencing is recommended for all CMOS devices. Always apply V+ before applying analog signals or logic inputs, especially if the analog or logic signals are not current limited. If this sequencing is not possible, and if the ana ...
QUOTATION High Voltage Testers
... voltage : 250V AC +/- 50V the LED and buzzer should work. + When retracted, hold the nameplate portion. Put the sensing tip in contact with the voltage : 80V AC or below the LED and buzzer should work. - Operation start distance: Distance at which operation starts when front metal is brought near di ...
... voltage : 250V AC +/- 50V the LED and buzzer should work. + When retracted, hold the nameplate portion. Put the sensing tip in contact with the voltage : 80V AC or below the LED and buzzer should work. - Operation start distance: Distance at which operation starts when front metal is brought near di ...
ptc thermistors - Digi
... Connection into an electrical circuit is accomplished by means of a spring contact system or through lead wires soldered to the device. The most common body style is the disk, however, recent innovations have led to chip, lozenge and surface mount packages for these devices. Fabrication of Switching ...
... Connection into an electrical circuit is accomplished by means of a spring contact system or through lead wires soldered to the device. The most common body style is the disk, however, recent innovations have led to chip, lozenge and surface mount packages for these devices. Fabrication of Switching ...
Stand-Alone Switch-Mode Lithium-Ion Battery-Charger Controller General Description Features
... with only a ±0.8% total voltage error at the battery terminals. The external N-channel switch and synchronous rectifier provide high efficiency over a wide input voltage range. A built-in safety timer automatically terminates charging once the adjustable time limit has been reached. The MAX1737 regu ...
... with only a ±0.8% total voltage error at the battery terminals. The external N-channel switch and synchronous rectifier provide high efficiency over a wide input voltage range. A built-in safety timer automatically terminates charging once the adjustable time limit has been reached. The MAX1737 regu ...
Chapter 4.9 - Automotive Electronic Circuits
... TJ = –40° to +150°C, Case 626, 751 Offers an economical solution to drive and protect N–channel power TMOS devices used in high side switching configurations. Unique device monitors load resulting VDS. TMOS voltage to produce a proportional current used to drive an externally programmed over current ...
... TJ = –40° to +150°C, Case 626, 751 Offers an economical solution to drive and protect N–channel power TMOS devices used in high side switching configurations. Unique device monitors load resulting VDS. TMOS voltage to produce a proportional current used to drive an externally programmed over current ...
Thevenin and Norton`s Theorem w/ Dep. Sources
... When we find the equivalent resistance for a Thévenin’s equivalent or a Norton’s equivalent, we set the independent sources equal to zero, and find the equivalent resistance of what remains. When a dependent source is present, trying to find the equivalent resistance results in a situation we have n ...
... When we find the equivalent resistance for a Thévenin’s equivalent or a Norton’s equivalent, we set the independent sources equal to zero, and find the equivalent resistance of what remains. When a dependent source is present, trying to find the equivalent resistance results in a situation we have n ...
LM392 LOW-POWER OPERATIONAL AMPLIFIER AND VOLTAGE COMPARATOR FEATURES
... input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the device. This transistor action can cause the output voltages of the amplifiers to go to the V+ voltage level (or to g ...
... input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the device. This transistor action can cause the output voltages of the amplifiers to go to the V+ voltage level (or to g ...
ADM2582E 数据手册DataSheet 下载
... The ADM2582E/ADM2587E are fully integrated signal and power isolated data transceivers with ±15 kV ESD protection and are suitable for high speed communication on multipoint transmission lines. The ADM2582E/ADM2587E include an integrated isolated dc-to-dc power supply, which eliminates the need for ...
... The ADM2582E/ADM2587E are fully integrated signal and power isolated data transceivers with ±15 kV ESD protection and are suitable for high speed communication on multipoint transmission lines. The ADM2582E/ADM2587E include an integrated isolated dc-to-dc power supply, which eliminates the need for ...
RF5375 2.4GHz TO 2.5GHz, 802.11b/g/n WiFi FRONT END MODULE Features
... RF input for the 802.11b/g/n PA. Input is matched to 50. DC block required. Regulated voltage for the PA bias control circuit. An external bypass capacitor may be needed on the VREG line for decoupling purposes. Receive port for 802.11b/g/n band. Internally matched to 50. DC block required. Contro ...
... RF input for the 802.11b/g/n PA. Input is matched to 50. DC block required. Regulated voltage for the PA bias control circuit. An external bypass capacitor may be needed on the VREG line for decoupling purposes. Receive port for 802.11b/g/n band. Internally matched to 50. DC block required. Contro ...
4. Electrical characteristics
... The reactors used are three-phase, dry type, with iron core and natural air cooling. The rated current is equal or higher than 1,43 times the capacitor bank nominal current. The inductance value is calculated so that the L-C tuning frequency is 4,3 times the fundamental frequency value (215Hz for 50 ...
... The reactors used are three-phase, dry type, with iron core and natural air cooling. The rated current is equal or higher than 1,43 times the capacitor bank nominal current. The inductance value is calculated so that the L-C tuning frequency is 4,3 times the fundamental frequency value (215Hz for 50 ...
irf.com - Newark
... Figure 2, DC input, non-dimming push-pull ballast block diagram. The boost configuration is similar to the AC input solution, except that the boost converter circuit has to be re-dimensioned for the higher boost ratio and the power components need to be rescaled to handle the higher current levels d ...
... Figure 2, DC input, non-dimming push-pull ballast block diagram. The boost configuration is similar to the AC input solution, except that the boost converter circuit has to be re-dimensioned for the higher boost ratio and the power components need to be rescaled to handle the higher current levels d ...
User Guide Model 380260 Insulation Tester / Megohmmeter
... until the circuit is completely discharged and the upper right display shows 0 volts. ...
... until the circuit is completely discharged and the upper right display shows 0 volts. ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.