PDF
... To use the drive as a generic inverter, it is necessary to provide PWM commands. J17 is a DB9 intended for connection to the BLDC motor in the dyno. Complete pin-out is given in the schematic (SK0014 rev 2). Pins 1 and 2 are 5V and ground, respectively, available to run a small external circuit. Pin ...
... To use the drive as a generic inverter, it is necessary to provide PWM commands. J17 is a DB9 intended for connection to the BLDC motor in the dyno. Complete pin-out is given in the schematic (SK0014 rev 2). Pins 1 and 2 are 5V and ground, respectively, available to run a small external circuit. Pin ...
LT1054 数据资料 dataSheet 下载
... In addition to being the output terminal, VOUT is tied to the substrate of the device. Special care must be taken in LT1054 circuits to avoid making VOUT positive with respect to any of the other terminals. For circuits with the output load connected from VCC to VOUT or from some external positive s ...
... In addition to being the output terminal, VOUT is tied to the substrate of the device. Special care must be taken in LT1054 circuits to avoid making VOUT positive with respect to any of the other terminals. For circuits with the output load connected from VCC to VOUT or from some external positive s ...
Evaluation Board User Guide UG-116
... have read and agreed to the Agreement. Your use of the Evaluation Board shall signify your acceptance of the Agreement. This Agreement is made by and between you (“Customer”) and Analog Devices, Inc. (“ADI”), with its principal place of business at One Technology Way, Norwood, MA 02062, USA. Subject ...
... have read and agreed to the Agreement. Your use of the Evaluation Board shall signify your acceptance of the Agreement. This Agreement is made by and between you (“Customer”) and Analog Devices, Inc. (“ADI”), with its principal place of business at One Technology Way, Norwood, MA 02062, USA. Subject ...
Dc Microgrids Stability
... • OPTION #2: Add filters, particularly capacitors. • Oscillations decrease with ...
... • OPTION #2: Add filters, particularly capacitors. • Oscillations decrease with ...
LMV761, LMV762/Q - Texas Instruments
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
BDTIC www.BDTIC.com/infineon Silicon Carbide Schottky: Novel Devices Require Novel Design Rules
... Further it is an important fact that GaAs has a 9 times lower heat conductivity than SiC. Together with the above mentioned strong conductivity reduction this lead to a very limited peak current capability of the GaAs diodes (IFSM<2*IF) in comparison to the SiC Schottky diodes (IFSM=3.6*IF). Even un ...
... Further it is an important fact that GaAs has a 9 times lower heat conductivity than SiC. Together with the above mentioned strong conductivity reduction this lead to a very limited peak current capability of the GaAs diodes (IFSM<2*IF) in comparison to the SiC Schottky diodes (IFSM=3.6*IF). Even un ...
BD48E23G-M
... Detector IC series. The line up includes BD48xxx devices with N-channel open drain output and BD49xxx devices with CMOS output. The devices are available for specific detection voltages ranging from 2.3V to 6.0V in increments of 0.1V. ...
... Detector IC series. The line up includes BD48xxx devices with N-channel open drain output and BD49xxx devices with CMOS output. The devices are available for specific detection voltages ranging from 2.3V to 6.0V in increments of 0.1V. ...
Stability and accuracy of active shielding for grounded capacitive sensors Ferran Reverter
... such as the three-signal technique [16], cannot compensate for this error because the reference components, which, in a practical setup, are built together with the interface circuit, do not suffer from the influence of active shielding. Therefore, it is advisable to reduce this error by selecting a ...
... such as the three-signal technique [16], cannot compensate for this error because the reference components, which, in a practical setup, are built together with the interface circuit, do not suffer from the influence of active shielding. Therefore, it is advisable to reduce this error by selecting a ...
BDTIC AN2009-05 MIPAQ™ base
... MIPAQ™ is a new functional product family and dedicated to useful integration of electronics into power modules. The MIPAQ™ family was developed in order to offer Modules Integrating Power, Application and Quality. It is a functional product family within Infineon‘s IGBT modules portfolio. The combi ...
... MIPAQ™ is a new functional product family and dedicated to useful integration of electronics into power modules. The MIPAQ™ family was developed in order to offer Modules Integrating Power, Application and Quality. It is a functional product family within Infineon‘s IGBT modules portfolio. The combi ...
ECE1250U14_Lab8_Capacitors CMF
... frequency until the voltage measured across the resistor (channel 1 on your scope) and capacitor (channel 2 on your scope) are equal. Follow section 2-3 in the attached PDF file for details on how to do this. Remember rad/secf(Hz) C (measured) = B. Measure capacitance using the time consta ...
... frequency until the voltage measured across the resistor (channel 1 on your scope) and capacitor (channel 2 on your scope) are equal. Follow section 2-3 in the attached PDF file for details on how to do this. Remember rad/secf(Hz) C (measured) = B. Measure capacitance using the time consta ...
Aalborg Universitet High-Performance Control of Paralleled Three-Phase Inverters for Residential
... among modules. However, their output voltage becomes load dependent. As a result, secondary controllers are designated to compensate voltage deviations and enhance parallel operation performance [22], [23]. Information, such as references, local data of each DC/AC module can be exchanged through com ...
... among modules. However, their output voltage becomes load dependent. As a result, secondary controllers are designated to compensate voltage deviations and enhance parallel operation performance [22], [23]. Information, such as references, local data of each DC/AC module can be exchanged through com ...
Current Electricity
... Short Circuits Short Circuit – an accidental low-resistance connection between two points on a circuit, causing excess electron flow ...
... Short Circuits Short Circuit – an accidental low-resistance connection between two points on a circuit, causing excess electron flow ...
Multiple RS-232 Drivers And Receivers (Rev. A)
... Output voltage range, VO (Driver) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 15 V to 15 V Low-level output current, IOL (Receiver) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 m ...
... Output voltage range, VO (Driver) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 15 V to 15 V Low-level output current, IOL (Receiver) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 m ...
74LCXP16245 Low Voltage 16-Bit Bidirectional Transceiver with
... could be shorted together for full 16-bit operation. The T/R inputs determine the direction of data flow through the device. The OE inputs disable both the A and B ports by placing them in a high impedance state. In addition, A and B port datapath pins have built-in resistors to GND allowing the pin ...
... could be shorted together for full 16-bit operation. The T/R inputs determine the direction of data flow through the device. The OE inputs disable both the A and B ports by placing them in a high impedance state. In addition, A and B port datapath pins have built-in resistors to GND allowing the pin ...
DP35648654
... and (4) show the cross-coupling terms between the compensation voltage and the filter inductor current. The block diagram of the physical circuit dynamics are illustrated in the right-hand side of Fig.3. B. Voltage and Current Closed-Loop Controls Fig.3 shows the block diagram of the proposed contro ...
... and (4) show the cross-coupling terms between the compensation voltage and the filter inductor current. The block diagram of the physical circuit dynamics are illustrated in the right-hand side of Fig.3. B. Voltage and Current Closed-Loop Controls Fig.3 shows the block diagram of the proposed contro ...
RESET MAX1947 Low Input/Output Voltage Step-Up DC-DC Converter with
... An inductor value of 4.7µH performs well in most applications. The MAX1947 also works with inductors in the 2.2µH to 6.8µH range. Smaller inductance values typi- ...
... An inductor value of 4.7µH performs well in most applications. The MAX1947 also works with inductors in the 2.2µH to 6.8µH range. Smaller inductance values typi- ...
Air Conditioning and Refrigeration Equipment Marking
... electric heat applications (their lower internal resistance offers cooler operation than ordinary fuses). T-Tron fast-acting fuses (JJN and JJS) in the sizes required above provide protection for electric heat applications and offer small physical size to reduce space and material cost. ...
... electric heat applications (their lower internal resistance offers cooler operation than ordinary fuses). T-Tron fast-acting fuses (JJN and JJS) in the sizes required above provide protection for electric heat applications and offer small physical size to reduce space and material cost. ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.