BA8522RF
... Power dissipation (total loss) indicates the power that the IC can consume at TA=25°C (normal temperature). As the IC consumes power, it heats up, causing its temperature to be higher than the ambient temperature. The allowable temperature that the IC can accept is limited. This depends on the circu ...
... Power dissipation (total loss) indicates the power that the IC can consume at TA=25°C (normal temperature). As the IC consumes power, it heats up, causing its temperature to be higher than the ambient temperature. The allowable temperature that the IC can accept is limited. This depends on the circu ...
MAX16930/MAX16931 2MHz, 36V, Dual Buck with Preboost and 20µA Quiescent Current General Description
... synchronous step-down controllers and a step-up preboost controller. They operate with an input voltage supply from 2V to 42V with preboost active and can operate in drop-out condition by running at 95% duty cycle. The devices are intended for applications with mid- to high-power requirements that o ...
... synchronous step-down controllers and a step-up preboost controller. They operate with an input voltage supply from 2V to 42V with preboost active and can operate in drop-out condition by running at 95% duty cycle. The devices are intended for applications with mid- to high-power requirements that o ...
OPA2107 Difet Precision Dual Operational Amplifier
... op amp. It is useful in a wide range of precision and low-noise analog circuitry and can be used to upgrade the performance of designs currently using BIFET® type amplifiers. The OPA2107 is fabricated on a proprietary dielectrically isolated (Difet ) process. This holds input bias currents to very l ...
... op amp. It is useful in a wide range of precision and low-noise analog circuitry and can be used to upgrade the performance of designs currently using BIFET® type amplifiers. The OPA2107 is fabricated on a proprietary dielectrically isolated (Difet ) process. This holds input bias currents to very l ...
ZXCT1030 - Diodes Incorporated
... The voltage reference has a maximum current sink capability. This magnitude of current will be influenced by the value of R1 which is inserted between VREF and VCC. The value of current flowing through R1 can be expressed as: I = (VCC -VREF) / R1 ...
... The voltage reference has a maximum current sink capability. This magnitude of current will be influenced by the value of R1 which is inserted between VREF and VCC. The value of current flowing through R1 can be expressed as: I = (VCC -VREF) / R1 ...
LED driver for single flash
... divider. Output of this divider is compared to the internal voltage reference 1.192 V. When the voltage of the voltage divider output is increased over the reference, the logic will switch off the power circuit. The maximum current, which could flow through the NTC pin is 1mA. Voltage divider must b ...
... divider. Output of this divider is compared to the internal voltage reference 1.192 V. When the voltage of the voltage divider output is increased over the reference, the logic will switch off the power circuit. The maximum current, which could flow through the NTC pin is 1mA. Voltage divider must b ...
NE5534x, SA5534x Low-Noise Operational
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absol ...
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absol ...
TL431A-Q1 数据资料 dataSheet 下载
... (die substrate) and should be floating or connected to ANODE. TL431, TL431A, TL431B DBZ (SOT-23-5) PACKAGE (TOP VIEW) ...
... (die substrate) and should be floating or connected to ANODE. TL431, TL431A, TL431B DBZ (SOT-23-5) PACKAGE (TOP VIEW) ...
II. Droop Controlling Method
... If the grid has to go in islanding mode due to fault or lowvoltage, the network controllers must keep the system frequency and voltage in a desirable area leads to sending the qualified power to consumers. The Microgrid should also recover the frequency and voltage in islanding mode rapidly. When Mi ...
... If the grid has to go in islanding mode due to fault or lowvoltage, the network controllers must keep the system frequency and voltage in a desirable area leads to sending the qualified power to consumers. The Microgrid should also recover the frequency and voltage in islanding mode rapidly. When Mi ...
MAX6775–MAX6781 Low-Power, 1%-Accurate Battery Monitors in µDFN and SC70 Packages General Description
... 5-Pin SC70 (derate 3.1mW/°C above +70°C) ..............247mW 6-Pin µDFN (derate 2.1mW°C above +70°C) ..............168mW ...
... 5-Pin SC70 (derate 3.1mW/°C above +70°C) ..............247mW 6-Pin µDFN (derate 2.1mW°C above +70°C) ..............168mW ...
INA117 数据资料 dataSheet 下载
... The INA117 is a precision unity-gain difference amplifier with very high common-mode input voltage range. It is a single monolithic IC consisting of a precision op amp and integrated thin-film resistor network. It can accurately measure small differential voltages in the presence of common-mode sign ...
... The INA117 is a precision unity-gain difference amplifier with very high common-mode input voltage range. It is a single monolithic IC consisting of a precision op amp and integrated thin-film resistor network. It can accurately measure small differential voltages in the presence of common-mode sign ...
MAX14606/MAX14607 Overvoltage Protectors with Reverse Bias Blocking General Description
... faults up to +36V. When the input voltage exceeds the overvoltage threshold, the internal FET is turned off to prevent damage to the protected components. The devices automatically choose the accurate internal trip thresholds. The internal OVLO are preset to typical 5.87V (MAX14606) or 6.8V (MAX1460 ...
... faults up to +36V. When the input voltage exceeds the overvoltage threshold, the internal FET is turned off to prevent damage to the protected components. The devices automatically choose the accurate internal trip thresholds. The internal OVLO are preset to typical 5.87V (MAX14606) or 6.8V (MAX1460 ...
J.M. Rivas, Y. Han, O. Leitermann, A.D. Sagneri, and D.J. Perreault, “A High-Frequency Resonant Inverter Topology with Low Voltage Stress,” 2007 IEEE Power Electronics Specialists Conference, pp. 2705 – 2717
... capacitance C1 of the class E circuit of Fig. 1 is oftentimes solely provided by the semiconductor drain-to-source capacitance. The non-linear variation of the device capacitance with drain voltage can further increase the voltage stress across the semiconductor, reaching a value of almost 4.4 times ...
... capacitance C1 of the class E circuit of Fig. 1 is oftentimes solely provided by the semiconductor drain-to-source capacitance. The non-linear variation of the device capacitance with drain voltage can further increase the voltage stress across the semiconductor, reaching a value of almost 4.4 times ...
ZXLD1360Q Description Pin Assignments Features Typical
... allowed value of sense resistor under these conditions to maintain switch current below the specified maximum value. It is possible to use different values of RS if the ADJ pin is driven from an external voltage. (See next section). ...
... allowed value of sense resistor under these conditions to maintain switch current below the specified maximum value. It is possible to use different values of RS if the ADJ pin is driven from an external voltage. (See next section). ...
Commercial Powersines COMEC
... The principle of the INV and VVC are via reducing the non-relevant voltage (up to 20V). This will result in a very high "power transfer ratio" PTR (the ratio between the load power and the controllers power). In the ComEC the PTR is about 12, whose main advantages result in a small footprint, low lo ...
... The principle of the INV and VVC are via reducing the non-relevant voltage (up to 20V). This will result in a very high "power transfer ratio" PTR (the ratio between the load power and the controllers power). In the ComEC the PTR is about 12, whose main advantages result in a small footprint, low lo ...
INCREASING POWER LEVEL IN RENEWABLE POWER
... multilevel inverter has been aroused due to its advantages of better power efficiency, lower switching harmonics, and a smaller filter inductor compared with the conventional halfbridge and full-bridge inverters. The conventional singlephase multilevel inverter topologies include the diodeclamped, t ...
... multilevel inverter has been aroused due to its advantages of better power efficiency, lower switching harmonics, and a smaller filter inductor compared with the conventional halfbridge and full-bridge inverters. The conventional singlephase multilevel inverter topologies include the diodeclamped, t ...
AN2950
... The power supply is set-up in a flyback topology. Its schematic is shown in Figure 2. The input section includes the protection elements (fuse and NTC for inrush current limiting), a filter for EMC suppression (C1, T2, C13), a diode bridge (BR1) and an electrolytic bulk capacitor (C3) as the front-e ...
... The power supply is set-up in a flyback topology. Its schematic is shown in Figure 2. The input section includes the protection elements (fuse and NTC for inrush current limiting), a filter for EMC suppression (C1, T2, C13), a diode bridge (BR1) and an electrolytic bulk capacitor (C3) as the front-e ...
Wiener MPOD manual (pdf)
... Safety After connecting the Power box to the mains, the mains input module is powered permanently. Filter and storage capacitors of the power factor correction module are charged with about 400VDC. Any DC-On-Signal as well as a power switch at control board (if any installed) operates as a low volta ...
... Safety After connecting the Power box to the mains, the mains input module is powered permanently. Filter and storage capacitors of the power factor correction module are charged with about 400VDC. Any DC-On-Signal as well as a power switch at control board (if any installed) operates as a low volta ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.