Rotor flux oriented control of induction machine based drives with
... of electrical machine in the field of high performance motor drives, thanks to the development of Flux Oriented Control (FOC) techniques [1–3]. The work presented in this paper was originally aimed at drives of any output power, ranging from a few dozens of kW to 4 MW in the case of low voltage driv ...
... of electrical machine in the field of high performance motor drives, thanks to the development of Flux Oriented Control (FOC) techniques [1–3]. The work presented in this paper was originally aimed at drives of any output power, ranging from a few dozens of kW to 4 MW in the case of low voltage driv ...
Average Current Mode Control of Switching Power Supplies
... design. With a boost regulator in a high power factor application, the downslope of inductor current equals (V,&$J/L and thus varies considerably as the input voltage follows the rectified sine waveform. A fixed ramp providing adequate compensation will overcompensate much of the time, with resultin ...
... design. With a boost regulator in a high power factor application, the downslope of inductor current equals (V,&$J/L and thus varies considerably as the input voltage follows the rectified sine waveform. A fixed ramp providing adequate compensation will overcompensate much of the time, with resultin ...
AD7441 数据手册DataSheet下载
... analog-to-digital converters (ADCs) that feature a pseudo differential analog input. These parts operate from a single 2.7 V to 5.25 V power supply and achieve very low power dissipation at high throughput rates of up to 1 MSPS. ...
... analog-to-digital converters (ADCs) that feature a pseudo differential analog input. These parts operate from a single 2.7 V to 5.25 V power supply and achieve very low power dissipation at high throughput rates of up to 1 MSPS. ...
LME49743 数据资料 dataSheet 下载
... mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associ ...
... mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associ ...
2SA1646,2SA1646-Z Data Sheet Silicon Power Transistor
... depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consen ...
... depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consen ...
MANUAL, VIBRATION SWITCH, 440450 (ME003 - 90018-031 - 1
... eliminate the measurement of vibration of material not of interest (piping, etc.), and provide a moisture barrier as well. Although seal tight and other flexible conduit have been used successfully, in areas of extreme humidity or moisture it is recommended that an “SO” type cable together with a su ...
... eliminate the measurement of vibration of material not of interest (piping, etc.), and provide a moisture barrier as well. Although seal tight and other flexible conduit have been used successfully, in areas of extreme humidity or moisture it is recommended that an “SO” type cable together with a su ...
FRN 0.75 E 1 S
... When setting the carrier frequency (F26) to 3 kHz or less. Use the current ( ) or below when the carrier frequency setting is higher than 4kHz and continuously operating at 100%. Obtained when a DC REACTOR is used. Average braking torque obtained when reducing the speed from 60Hz with AVR control OF ...
... When setting the carrier frequency (F26) to 3 kHz or less. Use the current ( ) or below when the carrier frequency setting is higher than 4kHz and continuously operating at 100%. Obtained when a DC REACTOR is used. Average braking torque obtained when reducing the speed from 60Hz with AVR control OF ...
a quasi-monolithic optical receiver using a standard
... emitter and associated current drive circuitry while the receiver includes an optical detector and amplifier circuitry. Most researchers in the optical receiver design area are using silicon bipolar [4,5], GaAs MESFET transistors [6-17], or novel devices [26] rather than standard digital CMOS techno ...
... emitter and associated current drive circuitry while the receiver includes an optical detector and amplifier circuitry. Most researchers in the optical receiver design area are using silicon bipolar [4,5], GaAs MESFET transistors [6-17], or novel devices [26] rather than standard digital CMOS techno ...
Eight LVPECL Output, High-Performance Clock
... Electrical Characteristics: LVCMOS Input, at VCC = 2.375 V to 3.6 V ......................................................... 6 6.6 Electrical Characteristics: Differential Input, at VCC = 2.375 V to 3.6 V ......................................................... 6 6.7 Electrical Characteristics: LV ...
... Electrical Characteristics: LVCMOS Input, at VCC = 2.375 V to 3.6 V ......................................................... 6 6.6 Electrical Characteristics: Differential Input, at VCC = 2.375 V to 3.6 V ......................................................... 6 6.7 Electrical Characteristics: LV ...
A LOW POWER AND FAST CMOS ARITHMETIC LOGIC UNIT NUR
... obtained is not sufficient for large circuits like multipliers. From their best improved version of 3T XOR cell obtained, they designed a FA circuit. They implement all the basic circuits and their improved versions in Cadence Virtuoso for 180nm technology and 1.8V source. ...
... obtained is not sufficient for large circuits like multipliers. From their best improved version of 3T XOR cell obtained, they designed a FA circuit. They implement all the basic circuits and their improved versions in Cadence Virtuoso for 180nm technology and 1.8V source. ...
AN123 - Application and Optimization of a 2GHz Differential Amplifier/ADC Driver
... low input noise and low signal distortion (high linearity) while consuming less power with each new generation. At the same time, they are sampling at ever increasing rates, which enables wider signal bandwidths and relaxes the requirements for analog antialias filtering. The switchedcapacitor inputs ...
... low input noise and low signal distortion (high linearity) while consuming less power with each new generation. At the same time, they are sampling at ever increasing rates, which enables wider signal bandwidths and relaxes the requirements for analog antialias filtering. The switchedcapacitor inputs ...
A 3-Phase ac Induction Motor Control System Based on the
... Two system fault inputs to the control board are designed to protect the power stage: system bus overvoltage and system bus overcurrent. The input signals for these fault comparators originate from signals on the power board. If an optoisolation board is used in the system, these signals are optocou ...
... Two system fault inputs to the control board are designed to protect the power stage: system bus overvoltage and system bus overcurrent. The input signals for these fault comparators originate from signals on the power board. If an optoisolation board is used in the system, these signals are optocou ...
Bourns® FLAT® Technology Gas Discharge Tube (GDT) Surge
... *As specified in ITU K.12 for 10 operations ...
... *As specified in ITU K.12 for 10 operations ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.