Cold-Junction Compensated Thermocouple-to-Digital Converter General Description Features
... complete serial-interface read of the cold-junction compensated thermocouple temperature requires 14 clock cycles. Thirty-two clock cycles are required to read both the thermocouple and reference junction temperatures (Table 2 and Table 3.) The first bit, D31, is the thermocouple temperature sign bi ...
... complete serial-interface read of the cold-junction compensated thermocouple temperature requires 14 clock cycles. Thirty-two clock cycles are required to read both the thermocouple and reference junction temperatures (Table 2 and Table 3.) The first bit, D31, is the thermocouple temperature sign bi ...
MAX3946 1Gbps to 11.3Gbps, SFP+ Laser Driver with Laser Impedance Mismatch Tolerance
... Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Expo ...
... Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Expo ...
LTM4600 - 10A High Efficiency DC/DC uModule
... off and bottom FET Q2 is turned on and held on until the overvoltage condition clears. Pulling the RUN/SS pin low forces the controller into its shutdown state, turning off both Q1 and Q2. Releasing the pin allows an internal 1.2μA current source to charge up the softstart capacitor. When this volta ...
... off and bottom FET Q2 is turned on and held on until the overvoltage condition clears. Pulling the RUN/SS pin low forces the controller into its shutdown state, turning off both Q1 and Q2. Releasing the pin allows an internal 1.2μA current source to charge up the softstart capacitor. When this volta ...
MAX11156 18-Bit, 500ksps, ±5V SAR ADC with Internal Reference in TDFN General Description
... Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Expo ...
... Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Expo ...
XR33052/53/55/58
... 120kΩ (1/10 unit load), allowing more than 320 devices on the bus. The XR33058 receiver input impedance is at least 30KΩ (1/2.5 unit load), allowing more than 80 devices on the bus. The driver is protected by short circuit detection as well as thermal shutdown and maintains high impedance in shutdow ...
... 120kΩ (1/10 unit load), allowing more than 320 devices on the bus. The XR33058 receiver input impedance is at least 30KΩ (1/2.5 unit load), allowing more than 80 devices on the bus. The driver is protected by short circuit detection as well as thermal shutdown and maintains high impedance in shutdow ...
4.2 Terminal Characteristics of Junction Diodes
... The fourth measurement is sort of between the forward and reverse bias “regions”, while the fifth is kind of between the breakdown and reverse bias regions. We could argue, for example, that the forth measurement is simultaneously in the forward and reverse bias region, or we could argue that it lie ...
... The fourth measurement is sort of between the forward and reverse bias “regions”, while the fifth is kind of between the breakdown and reverse bias regions. We could argue, for example, that the forth measurement is simultaneously in the forward and reverse bias region, or we could argue that it lie ...
CHIP TALK - Talking Electronics
... selected projects along with their underlying principles, proper description, parts list etc. Even experienced professionals would stand to gain something from it. Some important features of this book are: • It starts from scratch. It does not assume that every reader is familiar with the basic too ...
... selected projects along with their underlying principles, proper description, parts list etc. Even experienced professionals would stand to gain something from it. Some important features of this book are: • It starts from scratch. It does not assume that every reader is familiar with the basic too ...
THS413x High-Speed, Low-Noise, Fully
... Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The THS413x may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Fa ...
... Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The THS413x may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Fa ...
Protection against electric shocks
... of the supply system is normally earthed at a pint outside the influence area of the installation earth electrode, but need not be so. The impedance of the earth-fault loop therefore consists mainly in the two earth electrodes (i.e. the source and installation electrodes) in series, so that the magn ...
... of the supply system is normally earthed at a pint outside the influence area of the installation earth electrode, but need not be so. The impedance of the earth-fault loop therefore consists mainly in the two earth electrodes (i.e. the source and installation electrodes) in series, so that the magn ...
ATM-414 – Pneumatic systems Electro
... 8. Switch off the air and voltage supply before disconnecting the circuit. ...
... 8. Switch off the air and voltage supply before disconnecting the circuit. ...
The Smart Light Bulb - Worcester Polytechnic Institute
... types. All incandescent bulbs can be operated on a standard dimmer and can be dimmed to very low light levels. Since incandescent bulbs generate their own heat from the filament, they are not affected by varying ambient temperatures. This allows it to turn on instantly at a high brightness any weath ...
... types. All incandescent bulbs can be operated on a standard dimmer and can be dimmed to very low light levels. Since incandescent bulbs generate their own heat from the filament, they are not affected by varying ambient temperatures. This allows it to turn on instantly at a high brightness any weath ...
+3.3V, ±15kV ESD-Protected, Fail-Safe, Hot-Swap, RS-485/RS-422 Transceivers General Description Features
... Control Input Voltage (RE, DE, SLR, H/F, TXP, RXP)......................................................-0.3V to +6V Driver Input Voltage (DI)...........................................-0.3V to +6V Driver Output Voltage (Z, Y, A, B) .............................-8V to +13V Receiver Input Voltage (A, ...
... Control Input Voltage (RE, DE, SLR, H/F, TXP, RXP)......................................................-0.3V to +6V Driver Input Voltage (DI)...........................................-0.3V to +6V Driver Output Voltage (Z, Y, A, B) .............................-8V to +13V Receiver Input Voltage (A, ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.