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BD00HC0WEFJ
BD00HC0WEFJ

... (2) Connecting the power supply connector backward Connecting of the power supply in reverse polarity can damage the IC. Take precautions when connecting the power supply lines. An external direction diode can be added. (3) Power supply lines Design the PCB layout pattern to provide low impedance GN ...
Lab-18-(Circuit Analysis)
Lab-18-(Circuit Analysis)

... Moreover, when current comes to a junction, called a branching node, some of the flowing charges will follow one path and the rest will follow another path. The total quantity of charge entering the junction each second must equal the total quantity of charge leaving the junction each second. If thi ...
MAX15038 4A, 2MHz Step-Down Regulator General Description Features
MAX15038 4A, 2MHz Step-Down Regulator General Description Features

... delivers up to 4A load current at output voltages from 0.6V to 90% of VIN. The IC operates from 2.9V to 5.5V, making it ideal for on-board point-of-load and postregulation applications. Total output error is less than ±1% over load, line, and temperature ranges. The MAX15038 features fixed-frequency ...
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Amplifier Transfer F..

assign - UMD Physics
assign - UMD Physics

Evaluates:  MAX16834 MAX16834 Evaluation Kit General Description Features
Evaluates: MAX16834 MAX16834 Evaluation Kit General Description Features

... The MAX16834 evaluation (EV kit) is a fully assembled and tested surface-mount PCB designed to evaluate the MAX16834 pulse-width modulated (PWM) HB LED driver controller in a step-up (boost) configuration and optional step-up/step-down (buck-boost) operation. The MAX16834 EV kit operates from a DC s ...
A Reconfigurable Uninterruptible Power Supply System for Multiple Power Quality Applications
A Reconfigurable Uninterruptible Power Supply System for Multiple Power Quality Applications

IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

AAT3603A 数据资料DataSheet下载
AAT3603A 数据资料DataSheet下载

... Open Drain output. Will pull low when VCHGIN > 4.5V. When this happens, depending on the status of the USE_USB pin, the charge current will be reset to the default values (see Battery Charger and I2C Serial Interface and Programmability section) Step-down Buck converter switching node. Connect an in ...
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PDF

... consists of both PMOS and NMOS NBTI becomes a dominant factor in them as compared to DRAM. NBTI stands for Negative Bias Temperature Instability and is a phenomenon associated only with PMOS devices and happens when PMOS are stressed at elevated temperature with negative gate voltage. The effects on ...
High Gain Bandwidth Product, Precision Fast FET™ Op Amp AD8067
High Gain Bandwidth Product, Precision Fast FET™ Op Amp AD8067

... Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to ab ...
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MSWord file

TPS54200, TPS54201 4.5-V TO 28-V Input
TPS54200, TPS54201 4.5-V TO 28-V Input

PSpice Tutorial - Purdue Engineering
PSpice Tutorial - Purdue Engineering

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2013 Physics Intermediate 2 Finalised Marking Instructions

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Datasheet - Diodes Incorporated

Final Report - University of Portland
Final Report - University of Portland

... An electronic ballast is an apparatus that controls the current flow into a circuit. In this case, the circuit is a fluorescent lamp. There are various types of ballasts, but the electronic ballast increases the input frequency (typically 60 Hz in the United States) to a much higher frequency in the ...
MAX887 100% Duty Cycle, Low-Noise, Step-Down, PWM DC-DC Converter _______________General Description
MAX887 100% Duty Cycle, Low-Noise, Step-Down, PWM DC-DC Converter _______________General Description

... the inductor current is low, smoothing the voltage across the load. During normal operation, the MAX887 regulates output voltage by switching at a constant frequency and then modulating the power transferred to the load per pulse using the PWM comparator. A multi-input comparator sums three weighted ...
AD8311 数据手册DataSheet 下载
AD8311 数据手册DataSheet 下载

... corresponds to 20 dB, VSLP/20 represents the volts/dB. For the AD8311, a nominal (low frequency) slope of 24 mV/dB was chosen, and the intercept VZ was placed at −59 dBm for a sine wave input (251 µV rms). However, both the slope and the intercept are dependent on frequency. ...
Design Techniques for Low-Voltage Analog-to-Digital
Design Techniques for Low-Voltage Analog-to-Digital

Chapter-6 Electrical power and its Components I
Chapter-6 Electrical power and its Components I

... magnetic field of the current coil, alter the magnitude and phase of the field, and so produce an error. The phase of the induced eddy e.m.f.s. will be 90o behind the inducing flux – i.e. rather more than 90o behind the main current in the current coil. The eddy current is practically in phase with ...
PAM8407
PAM8407

... Thermal protection on the PAM8407 prevents damage to the device when the internal die temperature exceeds 150°C. There is a 15 degree tolerance on this trip point from device to device. Once the die temperature exceeds the thermal set point, the device outputs are disabled. This is not a latched fau ...
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... a minimum distance such that section clearance is available from any live part. The fence will be suitably earthed as per relevant standards. The soak pit and burnt oil pit for the line and bus reactors will be sized as per norms indicated in CBIP Manual for Fire Protection of Power Transformers. Th ...
PowerLogic Multi-Circuit Meter
PowerLogic Multi-Circuit Meter

... avoided, can result in minor or moderate injury. ...
Module 5 - WordPress.com
Module 5 - WordPress.com

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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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