$doc.title
... special components can be built in such as Schottky diodes and zener diodes for specific requirements. QUBiC processing enables extremely short propagation delay times combined with low power dissipation, low noise and high output drive. The process also allows very low temperature dependency of AC ...
... special components can be built in such as Schottky diodes and zener diodes for specific requirements. QUBiC processing enables extremely short propagation delay times combined with low power dissipation, low noise and high output drive. The process also allows very low temperature dependency of AC ...
MAX5065/MAX5067 Dual-Phase, +0.6V to +3.3V Output Parallelable, Average-Current-Mode Controllers General Description
... of low RDS(ON) MOSFETs, eliminating the need for external heatsinks even when delivering high output currents. Differential sensing enables accurate control of the output voltage, while adaptive voltage positioning provides optimum transient response. An internal regulator enables operation with inp ...
... of low RDS(ON) MOSFETs, eliminating the need for external heatsinks even when delivering high output currents. Differential sensing enables accurate control of the output voltage, while adaptive voltage positioning provides optimum transient response. An internal regulator enables operation with inp ...
a +5 V, Serial Input Complete 12-Bit DAC DAC8512
... output load directly to GND. The output sourcing current is provided by a P channel pull up device that can supply GND terminated loads, especially at the low supply tolerance values of 4.75 volts. Figures 5 and 6 provide information on output swing performance near ground and full-scale as a functi ...
... output load directly to GND. The output sourcing current is provided by a P channel pull up device that can supply GND terminated loads, especially at the low supply tolerance values of 4.75 volts. Figures 5 and 6 provide information on output swing performance near ground and full-scale as a functi ...
FEATURES HIGH LEVEL BLOCK DIAGRAM
... rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ...
... rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ...
NEMA-4X—IP65
... Control installation must ensure unrestricted air flow through the heatsink cooling fins. Note: If drive is mounted in other than a vertical position, decrease maximum allowable ambient temperature by 10°C. Enclosure - When mounting the BC154 or BCWD140 in an enclosure, it must be large enough to pr ...
... Control installation must ensure unrestricted air flow through the heatsink cooling fins. Note: If drive is mounted in other than a vertical position, decrease maximum allowable ambient temperature by 10°C. Enclosure - When mounting the BC154 or BCWD140 in an enclosure, it must be large enough to pr ...
Temperature control unit and related report
... In a purely resistive microheater, electrical power P is converted entirely into heat Q raising its temperature above ambient by T. Assuming a thermal resistance Rθ between the mass being heated and ambient (air), under nominal load and steady state heat flow conditions, T = R θ P. The same applies ...
... In a purely resistive microheater, electrical power P is converted entirely into heat Q raising its temperature above ambient by T. Assuming a thermal resistance Rθ between the mass being heated and ambient (air), under nominal load and steady state heat flow conditions, T = R θ P. The same applies ...
1. One electronvolt is equal to A. 1.6 × 10–19 CB 1.6 × 10–19 JC 1.6
... The manufacturer of the resistor in (b) guarantees its resistance to be within ±10 % of 1.5 Ω provided the power dissipation in the resistor does not exceed 1.0 W. Calculate the maximum current in the resistor for the power dissipation to be equal to 1.0 W. ...
... The manufacturer of the resistor in (b) guarantees its resistance to be within ±10 % of 1.5 Ω provided the power dissipation in the resistor does not exceed 1.0 W. Calculate the maximum current in the resistor for the power dissipation to be equal to 1.0 W. ...
Static Neutralizing Systems - Simco-Ion
... The most notable being contamination control, operator safety, and minimizing process equipment issues that can occur due to high static charges. Contamination control is a significant issue in many manufacturing environments, especially in critical applications such as food, medical or pharmaceutic ...
... The most notable being contamination control, operator safety, and minimizing process equipment issues that can occur due to high static charges. Contamination control is a significant issue in many manufacturing environments, especially in critical applications such as food, medical or pharmaceutic ...
4300 Series LaserSource User's Manual
... problems. No other laser diode driver in the industry has this feature. Another important feature of the LaserSource is its ability to operate in quasiCW (QCW) mode. This mode permits operation of lasers to a higher current and power, minimizing the thermal load by turning the laser on for only a br ...
... problems. No other laser diode driver in the industry has this feature. Another important feature of the LaserSource is its ability to operate in quasiCW (QCW) mode. This mode permits operation of lasers to a higher current and power, minimizing the thermal load by turning the laser on for only a br ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.