Surge protection - Phoenix Contact
... for the power supply Safe Energy Control, or SEC for short, represents nonreactive, powerful surge protection technology. The protective devices work discreetly in the background, providing consistent safeguarding for the entire system – including the backup fuses – even in cases where high lightnin ...
... for the power supply Safe Energy Control, or SEC for short, represents nonreactive, powerful surge protection technology. The protective devices work discreetly in the background, providing consistent safeguarding for the entire system – including the backup fuses – even in cases where high lightnin ...
LT1764A - 3A, Fast Transient Response, Low Noise, LDO Regulators
... Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LT1764A regulators are tested and specified under pulse load co ...
... Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LT1764A regulators are tested and specified under pulse load co ...
Development of Compound Semiconductor Devices— In Search of
... with two different semiconductors are called a hetero-junction, and the method of crystal growth of semiconductor with very few defects is called epitaxial growth method (epitaxy). The origin of the word “epitaxy” is Greek; “epi-” means “on” and “taxis” means “lining-up.” Therefore epitaxy means lin ...
... with two different semiconductors are called a hetero-junction, and the method of crystal growth of semiconductor with very few defects is called epitaxial growth method (epitaxy). The origin of the word “epitaxy” is Greek; “epi-” means “on” and “taxis” means “lining-up.” Therefore epitaxy means lin ...
PAM8001
... At this stage it is paramount to notice the necessity of separate grounds. Noise currents in the output power stage need to be returned to output noise ground and nowhere else. Were these currents to circulate elsewhere, they may get into the power supply, the signal ground, etc, worse yet, they may ...
... At this stage it is paramount to notice the necessity of separate grounds. Noise currents in the output power stage need to be returned to output noise ground and nowhere else. Were these currents to circulate elsewhere, they may get into the power supply, the signal ground, etc, worse yet, they may ...
SP3222
... potential to store electro-static energy and discharge it to an integrated circuit. The simulation is performed by using a test model as shown in Figure 17. This method will test the IC’s capability to withstand an ESD transient during normal handling such as in manufacturing areas where the ICs ten ...
... potential to store electro-static energy and discharge it to an integrated circuit. The simulation is performed by using a test model as shown in Figure 17. This method will test the IC’s capability to withstand an ESD transient during normal handling such as in manufacturing areas where the ICs ten ...
MAX14920/MAX14921 High-Accuracy 12-/16-Cell Measurement AFEs EVALUATION KIT AVAILABLE General Description
... (All voltages referenced to AGND.) VP to AGND ...........................................................-0.3V to +70V LDOIN to AGND ................................ (VA - 0.3V) to (VP + 0.3V) VA to AGND ............................................................-0.3V to +6V CV0, DGND to AGND...... ...
... (All voltages referenced to AGND.) VP to AGND ...........................................................-0.3V to +70V LDOIN to AGND ................................ (VA - 0.3V) to (VP + 0.3V) VA to AGND ............................................................-0.3V to +6V CV0, DGND to AGND...... ...
Final Report - WordPress@UP
... lead of the electromagnet is attached to the collector of the transistor and the emitter of the transistor is wired to ground. Additionally, diodes are wired with their anode connected to the collector of the transistor (and the negative lead of the electromagnet), and their cathode attached to the ...
... lead of the electromagnet is attached to the collector of the transistor and the emitter of the transistor is wired to ground. Additionally, diodes are wired with their anode connected to the collector of the transistor (and the negative lead of the electromagnet), and their cathode attached to the ...
BQ24105-Q1 数据资料 dataSheet 下载
... external sense resistor in series with the battery pack. A 0.1-µF capacitor to PGND is required. ...
... external sense resistor in series with the battery pack. A 0.1-µF capacitor to PGND is required. ...
Industrial Electronics
... power requires better DC circuit protection. SOC has developed the ability to meet requirements up to 700 VDC within miniature fuse package sizes. Industrial step-down DC converters employed where sensitive downstream equipment require protection, typically need fuses with quick-acting characteristi ...
... power requires better DC circuit protection. SOC has developed the ability to meet requirements up to 700 VDC within miniature fuse package sizes. Industrial step-down DC converters employed where sensitive downstream equipment require protection, typically need fuses with quick-acting characteristi ...
BA3308F
... mode) when such damage is suffered. A physical safety measure, such as a fuse, should be implemented when using the IC at times where the absolute maximum ratings may be exceeded. 4) GND potential Ensure a minimum GND pin potential in all operating conditions. Make sure that no pins are at a voltage ...
... mode) when such damage is suffered. A physical safety measure, such as a fuse, should be implemented when using the IC at times where the absolute maximum ratings may be exceeded. 4) GND potential Ensure a minimum GND pin potential in all operating conditions. Make sure that no pins are at a voltage ...
M27C4001 - EECS Instructional Support Group Home Page
... The erasure characteristics of the M27C4001 are such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Data shows that constant exp ...
... The erasure characteristics of the M27C4001 are such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Data shows that constant exp ...
electrical measurement laboratory
... A statistical analysis is performed on samples of very large quantities of the measurements to determine the probable variation in values of the entire measurement, which is resulted in Random errors. The percentage of the entire measurement, which will fall within a specific range of values, can be ...
... A statistical analysis is performed on samples of very large quantities of the measurements to determine the probable variation in values of the entire measurement, which is resulted in Random errors. The percentage of the entire measurement, which will fall within a specific range of values, can be ...
Current Electricity
... variety of application in practice. Uses i. Thermistors are used for voltage stabilisation, temperature control and remote sensing, ii. ...
... variety of application in practice. Uses i. Thermistors are used for voltage stabilisation, temperature control and remote sensing, ii. ...
Aluminum Electrolytic Capacitors
... layer on the cathode only starts at voltages of this magnitude. (This is because the cathode foil is covered by an air-oxide layer that corresponds to an anodized dielectric layer with a breakdown voltage of approximately 1,5 V.) Bipolar Al electrolytic capacitors Bipolar Al electrolytic capacitors ...
... layer on the cathode only starts at voltages of this magnitude. (This is because the cathode foil is covered by an air-oxide layer that corresponds to an anodized dielectric layer with a breakdown voltage of approximately 1,5 V.) Bipolar Al electrolytic capacitors Bipolar Al electrolytic capacitors ...
BDTIC
... the selection of appropriate ESD protection devices and makes the trial and error practices not longer justified. The Very Fast Transmission Line Pulse employs high current testing to determine the behaviour of devices and circuits in the current and time domain of ESD events. This strategy implemen ...
... the selection of appropriate ESD protection devices and makes the trial and error practices not longer justified. The Very Fast Transmission Line Pulse employs high current testing to determine the behaviour of devices and circuits in the current and time domain of ESD events. This strategy implemen ...
RF7188 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE
... the effective efficiency by minimizing the PLOSS term in the equation. An ASM may have a typical loss of 1.2dB in LB and 1.4dB in high band. To be added to this is trace losses and mismatch losses. A post PA loss of 1.5dB in LB and 1.8dB in HB is common. With the integration of a low loss pHEMT swit ...
... the effective efficiency by minimizing the PLOSS term in the equation. An ASM may have a typical loss of 1.2dB in LB and 1.4dB in high band. To be added to this is trace losses and mismatch losses. A post PA loss of 1.5dB in LB and 1.8dB in HB is common. With the integration of a low loss pHEMT swit ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.