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Earth fault distance computation with fundamental frequency
Earth fault distance computation with fundamental frequency

Virtex-5 FPGA PCB Designer’s Guide www.BDTIC.com/XILINX UG203 (v1.4) April 20, 2009
Virtex-5 FPGA PCB Designer’s Guide www.BDTIC.com/XILINX UG203 (v1.4) April 20, 2009

... PCB Technology Basics Printed circuit boards (PCBs) are electrical systems, with electrical properties as complicated as the discrete components and devices mounted to them. The PCB designer has complete control over many aspects of the PCB; however, current technology places constraints and limits ...
ltc1326.pdf
ltc1326.pdf

... narrow (100µs typ) soft reset pulse is generated on the SRST output pin after the button is released. The pushbutton circuitry contains an internal debounce counter which delays the output of the soft reset pulse by typically 20ms. This pin can be OR-tied to the RST pin and issue what is called a “s ...
STM1810
STM1810

... STM1813 and STM1818 feature a debounced manual reset feature that asserts a reset if the RST pin is pulled low for more than 1.5 µs. When used to initiate manual reset, RST debounces signals from devices such as mechanical switches. For devices with this feature, the release of the external switch t ...
PFC-6800 Fire Alarm Control Panel
PFC-6800 Fire Alarm Control Panel

IEEE Draft Guide for the Specification of Fixed
IEEE Draft Guide for the Specification of Fixed

... B.3 Site and environmental data, see Clause 6 .........................................................................................40 B.4 Power system characteristics, see Clause 7 ........................................................................................41 B.5 Main FSC characteris ...
Recloser Instruction Manual Multilin DGCR *1601-9207-B3*
Recloser Instruction Manual Multilin DGCR *1601-9207-B3*

Ubiquitous relaxation in BTI stressing—new evaluation
Ubiquitous relaxation in BTI stressing—new evaluation

H7AN-W4DM AC100-240 Datasheet
H7AN-W4DM AC100-240 Datasheet

Mini Electronics Project with Circuit Diagram
Mini Electronics Project with Circuit Diagram

... used here as a buck converter. It is a monolithic switching regulator sub-system intended for use as a DC-DC converter. The device consists of an internal temperaturecompensated reference, a comparator, a controlled duty-cycle oscillator with an active current-limit circuit, a driver and a high-curr ...
3-Phase BLDC Motor Control with Sensorless Back EMF Zero
3-Phase BLDC Motor Control with Sensorless Back EMF Zero

When fully charged the 2.0 mF capacitor used as a backup
When fully charged the 2.0 mF capacitor used as a backup

... Figure 3 shows one 0.020 F capacitor connected to a 20 V supply. By means of the changeover switch S, the capacitor is disconnected from the supply and connected to a small motor. The motor lifts an object of mass 0.15 kg through a height of 0.80 m, after which the energy left in the capacitor is ne ...
Operating and Service Instructions FLOAT BATTERY CHARGER
Operating and Service Instructions FLOAT BATTERY CHARGER

cont`d
cont`d

A Novel High-Frequency Voltage Standing-Wave Ratio
A Novel High-Frequency Voltage Standing-Wave Ratio

Si3210/Si3211
Si3210/Si3211

MAX2037 Ultrasound Variable-Gain Amplifier General Description Features
MAX2037 Ultrasound Variable-Gain Amplifier General Description Features

... The MAX2037 VGA is optimized for less than ±0.25dB absolute gain error to ensure minimal channel-to-channel ultrasound beamforming focus error. The device’s differential outputs are designed to directly drive ultrasound ADCs through an external passive anti-aliasing filter. A switchable clamp is als ...
Ultra-Low Contact Resistance of Epitaxially
Ultra-Low Contact Resistance of Epitaxially

... contact resistance for Si nanowires estimated using an empirical model which is based on current-voltage (I-V) measurements on Si nanobridges. Contact resistance was found to inversely depend on the effective wire cross-section area and calculated to be in the range 3.74 × 10-6 to 5.02 × 10-6 Ω cm2 ...
basic electrical circuits
basic electrical circuits

... Read Subcourse MD0902, Basic Electricity, before taking this subourse. After going through the programmed text at a relatively slow pace, go back through it several times as rapidly as you can. This will not take long and will help you feel more knowledgeable as you study. The purpose of the program ...
Temperature and Power Supply System
Temperature and Power Supply System

MAX2037 - Part Number Search
MAX2037 - Part Number Search

... The MAX2037 VGA is optimized for less than ±0.25dB absolute gain error to ensure minimal channel-to-channel ultrasound beamforming focus error. The device’s differential outputs are designed to directly drive ultrasound ADCs through an external passive anti-aliasing filter. A switchable clamp is als ...
MAX2035 Ultrasound Variable-Gain Amplifier General Description Features
MAX2035 Ultrasound Variable-Gain Amplifier General Description Features

... The MAX2035 VGA is optimized for less than ±0.5dB absolute gain error to ensure minimal channel-to-channel ultrasound beamforming focus error. The device’s differential outputs are designed to directly drive ultrasound ADCs through an external passive anti-aliasing filter. A switchable clamp is also ...
2007
2007

... combined with an external computing chip [3, 4] are limited both by the sheer volume of data, as well as by the bottleneck of transferring the data serially from the imager to the processing chip. These limitations only get worse as larger and larger imaging arrays are being released regularly on th ...
CSSP-81031 Final Version - Spectrum
CSSP-81031 Final Version - Spectrum

... in order that gm1 will be made less iIN-dependent. As IN1 is the DC component of iP1, if iP1 is made to vary in a smaller scale than iIN, the variation of IN1 will be down-scaled, making gm1 less sensitive to iIN. Let us define the scaling factor k = iP1/iIN, i.e. k = IN1/IIN if the low-pass filter ...
Model 428B Clip-On Milliammeter
Model 428B Clip-On Milliammeter

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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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