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AH5798  SINGLE PHASE HALL EFFECT LATCH SMART FAN MOTOR CONTROLLER
AH5798 SINGLE PHASE HALL EFFECT LATCH SMART FAN MOTOR CONTROLLER

... * Reverse connection of power supply may damage the device. To prevent reverse power damage, a protection (reverse blocking) Diode D1 is needed between power supply and Vdd terminal. If a reverse power protection diode D1 is used, there is no current return path to power supply, so it is necessary t ...
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... SERIAL PRESENCE-DETECT OPERATION - This module incorporates Serial Presence-Detect (SPD) . The SPD function is implemented using a 2,048 bit EEPROM, containing 256 bytes of nonvolatile storage. The first 128 bytes can be programmed by SpecTek to identify the module type and various DRAM organization ...
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... this process can exceed 10%. Some of the chemical solutions used in this process can cause changes in resistance up to 60%. The oxide treatment of the copper surface is the most critical process, and the solution should be strictly monitored. Changes in resistance can be compensated by the addition ...
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... must be sure that the values for voltage and resistance are appropriate for that resistor and not some other resistor in the circuit. If you are calculating IR2 using the Ohm’s Law equation I = E R , then you must use the value of that resistor’s voltage (ER2 ) and that resistor’s resistance (R2 ), ...
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... 3. {40 Points} You have available three kinds of amplifiers, and have available several of each the three types. These amplifiers can be connected together in stages to connect a source with a source resistance of 10[k] to a load of 50[]. The three types of amplifier are described below. The Type ...
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... After a fixed period of 100 ms, the amplifier will attempt to switch on again, but will fail if the output current still exceeds the OCP threshold. The amplifier will continue trying to switch on every 100 ms. The average power dissipation will be low in this situation because the duty cycle is shor ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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