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SFH610A, SFH6106
SFH610A, SFH6106

... The SFH610A and SFH6106 feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The c ...
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... voltage. Built-in compensation across the output voltage range eliminates the need for external components. The feedback (FB) regulation accuracy over -40°C to +125°C is ±1.1%. The device is available in a compact (5mm x 5mm) TQFN lead (Pb)-free package with an exposed pad. Simulation models are ava ...
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... The SP207E-SP213E are enhanced transceivers intended for use in RS-232 and V.28 serial communication. These devices feature very low power consumption and single-supply operation making them ideal for space-constrained applications. Exar on-board charge pump circuitry generates fully compliant RS-23 ...
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... provide the in-service or install date on the warranty claim form will cause the warranty period to begin on the date the part was manufactured or date of sale recorded on the original sales invoice, whichever is earlier. A completed warranty claim form should accompany all parts submitted to Purkey ...
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... The MAX13487E/MAX13488E +5V, half-duplex, ±15kV ESD-protected RS-485/RS-422-compatible transceivers feature one driver and one receiver. The MAX13487E/ MAX13488E include a hot-swap capability to eliminate false transitions on the bus during power-up or live insertion. The MAX13487E/MAX13488E feature ...
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... Impedance Matching was originally developed for electrical power, but can be applied to any other field where a form of energy (not necessarily electrical) is transferred between a source and a load. The first Impedance Matching concept in RF domain was related to antenna matching. Designing an ante ...
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... outside of the range of the supplies are encountered. In higher gain applications where differential voltages are small, back-toback Zener diodes and smaller resistors, as shown in Figure 26b, provides adequate protection. Figure 26c shows low cost FETs with a maximum ON resistance of 300 Ω configur ...
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... Mounting Options). Models with LS and IS strobes are Listed for wall or ceiling mounting; models with LSM strobes are Listed for wall mounting. The LSM strobes are listed at 15 candela under UL Standard 1971 and meet 75 candela intensity on axis with low current draw. The AMT Multitone Strobe Applia ...
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... * Reverse connection of power supply may damage the device. To prevent reverse power damage, a protection (reverse blocking) Diode D1 is needed between power supply and Vdd terminal. If a reverse power protection diode D1 is used, there is no current return path to power supply, so it is necessary t ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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