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RF IV Waveform Engineering Applied to VSWR Sweeps and RF
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... (PA) design can be used to investigate RF reliability. Within this area two major themes are concentrated on – firstly the effect of a load impedance mismatch and secondly an investigation into using the RF IV waveform measurement system for RF stress testing. The initial aim for this work was to in ...
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... resistor. Available in four different end-to-end resistance values (5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ), these low temperature coefficient devices are ideal for high accuracy and stability variable resistance adjustments. The wiper settings are controllable through the I2C compatible digital interface, whic ...
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... In applications that are sensitive to powersupply noise, decouple VCC to ground with a capacitor of the same value as charge-pump capacitor C1. Physically connect bypass capacitors as close to the IC as possible. The charge pumps operate in a discontinuous mode using an internal oscillator. If the o ...
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... Publisher’s PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication: • A submitted manuscript is the author’s version of the article upon submission and before peer-review. There can be important differences between t ...
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... As demand for low power, low noise CMOS ADCs grows, more highly linear low noise S/H circuits are required. The S/H circuit requires in design a high Signal to Noise Ratio (SNR). To realize it, the analog switch should supply enough overdrive voltage to the gates of the MOSFET. Otherwise, the analog ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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