
Analysis of a Novel Soft Switching Bidirectional DC-DC
... employed for every alternative energy generation system and the efficiency of the power conversion system is in close connection with that of entire system, the researches of inverter and converter have processed vigorously. Particularly, in order to reduce switching losses that occur from the switc ...
... employed for every alternative energy generation system and the efficiency of the power conversion system is in close connection with that of entire system, the researches of inverter and converter have processed vigorously. Particularly, in order to reduce switching losses that occur from the switc ...
AD8132 (Rev. G)
... The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). The load current consists of the dif ...
... The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). The load current consists of the dif ...
Smart Ground Test Report Springfield Energy
... plant ground, (b) induced voltages due to currents flowing in the two 161 kV transmission lines connecting the generating plant and the switchyard, and (c) induced voltages due to current flowing in the ground conductor installed along the conduits of the communication and control circuits. It appea ...
... plant ground, (b) induced voltages due to currents flowing in the two 161 kV transmission lines connecting the generating plant and the switchyard, and (c) induced voltages due to current flowing in the ground conductor installed along the conduits of the communication and control circuits. It appea ...
Converting MicroSim~ Schematics Designs
... simulation models for Pulse Width Modulation (PWM), Switching Regulators, Phase Shift Controllers and other Power ICs. You can perform high-speed, cycle-by-cycle simulation to show true large-signal performance, simulate current-mode control using the latest accurate modeling techniques, run CCM and ...
... simulation models for Pulse Width Modulation (PWM), Switching Regulators, Phase Shift Controllers and other Power ICs. You can perform high-speed, cycle-by-cycle simulation to show true large-signal performance, simulate current-mode control using the latest accurate modeling techniques, run CCM and ...
Curve Tracers - MATsolutions
... with 1 pA and 50 µV measurement resolution. The 370B performs DC parametric characterization of integrated circuits, transistors, thyristors, diodes, SCRs, MOSFETs, electro-optic components, solar cells, solidstate relays and other semiconductor devices. It has push button source and measurement con ...
... with 1 pA and 50 µV measurement resolution. The 370B performs DC parametric characterization of integrated circuits, transistors, thyristors, diodes, SCRs, MOSFETs, electro-optic components, solar cells, solidstate relays and other semiconductor devices. It has push button source and measurement con ...
power PNU
... These can be mapped into phasor relationships very simply for resistors capacitors and inductor. For the resistor, the voltage and current are related via Ohm’s law. As such, the voltage and current are in phase with each other. Advanced Broadcasting & Communications Lab. ...
... These can be mapped into phasor relationships very simply for resistors capacitors and inductor. For the resistor, the voltage and current are related via Ohm’s law. As such, the voltage and current are in phase with each other. Advanced Broadcasting & Communications Lab. ...
PAM8012
... the outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die decreased by +40°C. This large hysteresis will prevent motor boating sound well and the device begins normal operation at this point with no external system interaction. ...
... the outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die decreased by +40°C. This large hysteresis will prevent motor boating sound well and the device begins normal operation at this point with no external system interaction. ...
Flight Computer Carrier Board Capstone
... ATA/IDE, SPI, etc) makes it the perfect SBC for the Rocket Avionic. The main downside of this SBC is that it has an array of high density surface mount connectors on the bottom of the board to mount to a “carrier board.”The carrier board used is a giant multi-purpose carrier board that (STK5200) bre ...
... ATA/IDE, SPI, etc) makes it the perfect SBC for the Rocket Avionic. The main downside of this SBC is that it has an array of high density surface mount connectors on the bottom of the board to mount to a “carrier board.”The carrier board used is a giant multi-purpose carrier board that (STK5200) bre ...
09210021, 09210019, 11310015
... Grain Oriented (CRNGO). In the primary side of this transformer have 23 turns of winding and secondary side has 650 turns of winding. The layer is insulated by a paper and the second layers wooed on it, this process is considered till the 650 turns is completed. We have used 5SWG blue channeled wire ...
... Grain Oriented (CRNGO). In the primary side of this transformer have 23 turns of winding and secondary side has 650 turns of winding. The layer is insulated by a paper and the second layers wooed on it, this process is considered till the 650 turns is completed. We have used 5SWG blue channeled wire ...
Relays General information
... Vmax 10°C = Vmax 40°C x K2 10°C = 55 x 1.12 = 61.6 VDC Vmax 60°C = Vmax 40°C x K2 60°C = 55 x 0.88 = 48.4 VDC Note: Two other considerations must be made: The maximum voltage limit is determined by the above heating problems and also by the magnetic iron saturation of the electromagnetic circuit. K1 ...
... Vmax 10°C = Vmax 40°C x K2 10°C = 55 x 1.12 = 61.6 VDC Vmax 60°C = Vmax 40°C x K2 60°C = 55 x 0.88 = 48.4 VDC Note: Two other considerations must be made: The maximum voltage limit is determined by the above heating problems and also by the magnetic iron saturation of the electromagnetic circuit. K1 ...
BDTIC www.BDTIC.com/infineon Ballast Design for 54W T5 Fluorescent Lamp
... Built-In Customer Test Mode – Acceleration Preheating & Ignition . . . . . . . . . . . . . . . . . . . . . . . . 41 Built-In Customer Test Mode – Acceleration Pre-Run . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Built-In Customer Test Mode – Acceleration EOL2 . . . . . . . ...
... Built-In Customer Test Mode – Acceleration Preheating & Ignition . . . . . . . . . . . . . . . . . . . . . . . . 41 Built-In Customer Test Mode – Acceleration Pre-Run . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Built-In Customer Test Mode – Acceleration EOL2 . . . . . . . ...
ics85401.pdf
... HiPerClockS™ HiPerClockS™ family of High Performance Clock Solutions from ICS. The ICS85401 can also perform differential translation because the differential inputs accept LVPECL, CML as well as LVDS levels. The ICS85401 is packaged in a small 3mm x 3mm 16 VFQFN package, making it ideal for use on ...
... HiPerClockS™ HiPerClockS™ family of High Performance Clock Solutions from ICS. The ICS85401 can also perform differential translation because the differential inputs accept LVPECL, CML as well as LVDS levels. The ICS85401 is packaged in a small 3mm x 3mm 16 VFQFN package, making it ideal for use on ...
IS31AP2121
... advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of ...
... advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of ...
Report - inst.eecs.berkeley.edu
... In this paper, performance of two specific subthreshold SRAM designs [2], [4] are compared to the traditional 6T design. The design in [4] uses an 8T memory cell which only marginally adds to the typical SRAM cell area. The extra two transistors act as a buffer which protects the stored data during ...
... In this paper, performance of two specific subthreshold SRAM designs [2], [4] are compared to the traditional 6T design. The design in [4] uses an 8T memory cell which only marginally adds to the typical SRAM cell area. The extra two transistors act as a buffer which protects the stored data during ...
NCP1236 Fixed Frequency Current Mode Controller for Flyback Converters
... featuring Dynamic Self−Supply (DSS). This device is pin−to−pin compatible with the previous NCP12xx families. The DSS function greatly simplifies the design of the auxiliary supply and the VCC capacitor by activating the internal startup current source to supply the controller during transients. Due ...
... featuring Dynamic Self−Supply (DSS). This device is pin−to−pin compatible with the previous NCP12xx families. The DSS function greatly simplifies the design of the auxiliary supply and the VCC capacitor by activating the internal startup current source to supply the controller during transients. Due ...
MAX5889 12-Bit, 600Msps, High-Dynamic-Performance DAC with LVDS Inputs General Description
... Operating Temperature Range ..........................-40°C to +85°C Junction Temperature .....................................................+150°C Storage Temperature Range ............................-60°C to +150°C Lead Temperature (soldering, 10s) ................................+300°C ...
... Operating Temperature Range ..........................-40°C to +85°C Junction Temperature .....................................................+150°C Storage Temperature Range ............................-60°C to +150°C Lead Temperature (soldering, 10s) ................................+300°C ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.