LT1363 - 70MHz, 1000V/µs Op Amp
... Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Differential inputs of ±10V are appropriate for transient operation only, such as during slewing. Large, sustained differential inputs will cause excessive power dissipation and may damage th ...
... Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Differential inputs of ±10V are appropriate for transient operation only, such as during slewing. Large, sustained differential inputs will cause excessive power dissipation and may damage th ...
Introduction to Power Electronics
... the output curve, where voltage is between 0 and approximately 1 V is called the saturation region. Here, the resistance of the device is very low and it is opened fully. When it is used in digital and switching circuits, the transistor commonly operates in this region during the long time. The main ...
... the output curve, where voltage is between 0 and approximately 1 V is called the saturation region. Here, the resistance of the device is very low and it is opened fully. When it is used in digital and switching circuits, the transistor commonly operates in this region during the long time. The main ...
Charge Pump Driver for LCD White LED Backlights ADM8845
... The ADM8845 charge pump driver for LCD white LED backlights implements a multiple gain charge pump (1×, 1.5×, 2×) to maintain the correct voltage on the anodes of the LEDs over a 2.6 V to 5.5 V (Li-Ion) input supply voltage. The charge pump automatically switches between 1×/1.5×/2× modes, based on t ...
... The ADM8845 charge pump driver for LCD white LED backlights implements a multiple gain charge pump (1×, 1.5×, 2×) to maintain the correct voltage on the anodes of the LEDs over a 2.6 V to 5.5 V (Li-Ion) input supply voltage. The charge pump automatically switches between 1×/1.5×/2× modes, based on t ...
Hex Level Shifter for TTL to CMOS or CMOS to CMOS
... Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information in the package device. If any of these limits are exceeded, device functionality should not be dimensions section on page 2 of this data sheet. assumed, damage may occur and rel ...
... Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information in the package device. If any of these limits are exceeded, device functionality should not be dimensions section on page 2 of this data sheet. assumed, damage may occur and rel ...
MN225008EN/ Old S225-10-30
... avoided, may result in minor or moderate injury. CAUTION: Indicates a potentially hazardous situation which, if not avoided, may result in equipment damage only. ...
... avoided, may result in minor or moderate injury. CAUTION: Indicates a potentially hazardous situation which, if not avoided, may result in equipment damage only. ...
92 1. PURPOSE The purpose of this experiment is to show
... Figure 1.2: Connection of an ammeter to an electrical circuit to measure the current value through a branch in this circuit. An ammeter is connected in series in an electrical circuit. An ammeter must not be connected parallel with any other instruments or electrical circuit part. If an ammeter is c ...
... Figure 1.2: Connection of an ammeter to an electrical circuit to measure the current value through a branch in this circuit. An ammeter is connected in series in an electrical circuit. An ammeter must not be connected parallel with any other instruments or electrical circuit part. If an ammeter is c ...
Fuse Facts and Numbering System
... This fuse consists of a short circuit strip and a soldered joint spring connection. During overload conditions the soldered joint gets hot enough to melt and the spring shears the junction loose. Under short circuit conditions, the short circuit element operates to open the circuit. All dual-element ...
... This fuse consists of a short circuit strip and a soldered joint spring connection. During overload conditions the soldered joint gets hot enough to melt and the spring shears the junction loose. Under short circuit conditions, the short circuit element operates to open the circuit. All dual-element ...
product catalogue - amelec Electronic GmbH
... for individual compensated machines where the capacitor is directly connected with the motor terminals. The capacitor placed in parallel may act as a generator for the motor which will cause serious overvoltages (self-excitation phenomena). In case of wound rotor motor the reactive power of the capa ...
... for individual compensated machines where the capacitor is directly connected with the motor terminals. The capacitor placed in parallel may act as a generator for the motor which will cause serious overvoltages (self-excitation phenomena). In case of wound rotor motor the reactive power of the capa ...
Section 5. ELECTRICAL WIRE RATING
... prevent an excessive voltage drop while carrying the required current over the required distance. (See table 11-6, Tabulation Chart, for allowable voltage drops.) (2) The size should be sufficient to prevent overheating of the wire carrying the required current. (See paragraph 11-69 for allowable cu ...
... prevent an excessive voltage drop while carrying the required current over the required distance. (See table 11-6, Tabulation Chart, for allowable voltage drops.) (2) The size should be sufficient to prevent overheating of the wire carrying the required current. (See paragraph 11-69 for allowable cu ...
Avalanche Ruggedness of Local Charge Balance Power Super Junction Transistors
... devices derived from the UltiMOS structure (conventional UMOS transistor, SJ Diodes and SJ Bipolar transistors) were fabricated in the ON Semiconductor’s Clean Room and tested under the same avalanche conditions as UltiMOS transistors. All the results derived from complementary techniques (Unclamped ...
... devices derived from the UltiMOS structure (conventional UMOS transistor, SJ Diodes and SJ Bipolar transistors) were fabricated in the ON Semiconductor’s Clean Room and tested under the same avalanche conditions as UltiMOS transistors. All the results derived from complementary techniques (Unclamped ...
Introduction to Power Electronics
... the output curve, where voltage is between 0 and approximately 1 V is called the saturation region. Here, the resistance of the device is very low and it is opened fully. When it is used in digital and switching circuits, the transistor commonly operates in this region during the long time. The main ...
... the output curve, where voltage is between 0 and approximately 1 V is called the saturation region. Here, the resistance of the device is very low and it is opened fully. When it is used in digital and switching circuits, the transistor commonly operates in this region during the long time. The main ...
AD7839 数据手册DataSheet 下载
... outputs are switched to the externally set potential on the relevant DUTGND pin. The contents of input registers and DAC registers A to H are not affected when the CLR pin is taken low. When CLR is brought back high, the DAC outputs revert to their original outputs as determined by the data in their ...
... outputs are switched to the externally set potential on the relevant DUTGND pin. The contents of input registers and DAC registers A to H are not affected when the CLR pin is taken low. When CLR is brought back high, the DAC outputs revert to their original outputs as determined by the data in their ...
S225-10-5
... 1. Verify from the regulator nameplate that the control circuit is connected for the proper regulated load voltage. 2. Set the AUTO/OFF/MANUAL switch to MANUAL and the POWER switch to EXTERNAL. 3. The knife switches on the back panel should be set with the V1 (potential switch) [and V6 if present] o ...
... 1. Verify from the regulator nameplate that the control circuit is connected for the proper regulated load voltage. 2. Set the AUTO/OFF/MANUAL switch to MANUAL and the POWER switch to EXTERNAL. 3. The knife switches on the back panel should be set with the V1 (potential switch) [and V6 if present] o ...
NND - NMOS 256 KBIT (32KB X8) UV EPROM
... a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. ...
... a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. ...
Final SC - Materials Science and Engineering Teachers Workshop
... In 1975, Gordon Moore gave a famous talk at the International Electronic Devices Meeting (IEDM) in which he predicted a growth in microchip complexity of roughly a factor of two every year. In most areas of electron device production, his predictions have been met or exceeded. The push for smaller d ...
... In 1975, Gordon Moore gave a famous talk at the International Electronic Devices Meeting (IEDM) in which he predicted a growth in microchip complexity of roughly a factor of two every year. In most areas of electron device production, his predictions have been met or exceeded. The push for smaller d ...
TAS5701 数据资料 dataSheet 下载
... proper input logic levels if the terminals are left unconnected (pullups → logic 1 input; pulldowns → logic 0 input). Devices that drive inputs with pullups must be able to sink 50 mA while maintaining a logic-0 drive level. Devices that drive inputs with pulldowns must be able to source 50 mA while ...
... proper input logic levels if the terminals are left unconnected (pullups → logic 1 input; pulldowns → logic 0 input). Devices that drive inputs with pullups must be able to sink 50 mA while maintaining a logic-0 drive level. Devices that drive inputs with pulldowns must be able to source 50 mA while ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.