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F.3 Physics
F.3 Physics

... A voltmeter should be connected in ______________ to a component in order to measure the voltage across the component. (series/parallel) An ammeter should be connected in ______________ to a component in order to measure the current passing through the component. (series/parallel) ...
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BSNL_Telecommodel2009 - 2 009

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... When a resistor is traversed in the direction of the current, the potential difference DV across the resistor is 2IR. When a resistor is traversed in the direction opposite the current, DV 5 1IR. When a source of emf is traversed in the direction of the emf (negative terminal to positive terminal), ...
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... 6V power source is turned on, the positive voltage will flow toward the top of the circuit, the inside membrane, through RNa3. Because the membrane voltage at this point is less than the threshold of the diode, current will flow only through Cmem and Rleak. Rleak provides resistance to model leak cu ...
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... 7). The control knob level in a CRO is used to DC offset voltage adjustment 8). The two types of storage techniques used in analog CROs are Mesh storage,phosphor storage 9). In a cathode ray tube ,the focusing anode is located between pre accelerating and accelerating anodes 10).The source of an ele ...
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... especially when using higher impedance sensors, or when large feedback resistors are needed to maintain low power. For a 10k total source impedance, the 300pA maximum input bias current of the LT6011 causes only 3µV of error. The LT6011 features internal base current cancellation, which makes the po ...
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< 1 ... 1159 1160 1161 1162 1163 1164 1165 1166 1167 ... 1285 >

Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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