2SB1204 数据资料DataSheet下载
... Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpos ...
... Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpos ...
Low Current Measurements - Techni-Tool
... currents generated by the interconnections, errors induced by the voltage burden (or drop) across the entire ammeter model, and the uncertainty of the meter itself. With measurements of currents in the normal range (typically >1mA), errors caused by ammeter voltage burden, shunt currents, and noise ...
... currents generated by the interconnections, errors induced by the voltage burden (or drop) across the entire ammeter model, and the uncertainty of the meter itself. With measurements of currents in the normal range (typically >1mA), errors caused by ammeter voltage burden, shunt currents, and noise ...
... voltage‟. The „missing voltage‟ is the difference between the nominal voltage and the actual. The converter is normally based on some kind of energy storage, which will supply the converter with a DC voltage like capacitor. The solid-state electronics in the converter is then switched to get the des ...
ESD24VS2U
... ISO7637-2: Pulse 1 (max. 50 V), Pulse 2 (max. 125 V), Pulse 3a, b (max.800 V) • Max. working voltage: 24 V ...
... ISO7637-2: Pulse 1 (max. 50 V), Pulse 2 (max. 125 V), Pulse 3a, b (max.800 V) • Max. working voltage: 24 V ...
TXY-001
... simplification, choose the input capacitor whose RMS current rating greater than half of the maximum load current. The input capacitor can be electrolytic, tantalum or ceramic. When using electrolytic or tantalum capacitors, a small, high quality ceramic capacitor, i.e. 0.1μF, should be placed as cl ...
... simplification, choose the input capacitor whose RMS current rating greater than half of the maximum load current. The input capacitor can be electrolytic, tantalum or ceramic. When using electrolytic or tantalum capacitors, a small, high quality ceramic capacitor, i.e. 0.1μF, should be placed as cl ...
MDS-060AAS15 BA Datasheet
... As mentioned above, the power supply also has Over Temperature Protection (OTP). This is activated when the overload condition persists for an extended duration and the output current is below the overload trigger point but >100% load. In the event of a higher operating condition at 100% load, the p ...
... As mentioned above, the power supply also has Over Temperature Protection (OTP). This is activated when the overload condition persists for an extended duration and the output current is below the overload trigger point but >100% load. In the event of a higher operating condition at 100% load, the p ...
Digital Logic
... represented by high and low voltage levels, which the device processes electronically. The devices that perform the simplest of the logic operations (such as AND, OR, NAND, etc.) are called gates. For example, an AND gate electronically computes the AND of the voltage encoded binary signals appearin ...
... represented by high and low voltage levels, which the device processes electronically. The devices that perform the simplest of the logic operations (such as AND, OR, NAND, etc.) are called gates. For example, an AND gate electronically computes the AND of the voltage encoded binary signals appearin ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.