ES1F - ES1J Fast Rectifiers ES1F - ES1J Fast Rectifiers Features
... • Low profile package. • Easy pick and place. • Built-in strain relief. • Superfast recovery times for high efficiency. ...
... • Low profile package. • Easy pick and place. • Built-in strain relief. • Superfast recovery times for high efficiency. ...
DATA SHEET BLV45/12 VHF power transistor August 1986
... more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods ...
... more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods ...
lecture1427131830
... connected in a closed loop “bridge” configuration to produce the desired output. The main advantage of this bridge circuit is that it does not require a special centre tapped transformer, thereby reducing its size and cost. The single secondary winding is connected to one side of the diode bridge ne ...
... connected in a closed loop “bridge” configuration to produce the desired output. The main advantage of this bridge circuit is that it does not require a special centre tapped transformer, thereby reducing its size and cost. The single secondary winding is connected to one side of the diode bridge ne ...
Instructions/Template file
... Ohm's law states that -- under certain conditions -- the voltage across an object varies linearly with the current through the object: i.e. V = IR. Another way to say this is that the resistance of the object is independent of the voltage applied across it. A device that obeys this law is said to sh ...
... Ohm's law states that -- under certain conditions -- the voltage across an object varies linearly with the current through the object: i.e. V = IR. Another way to say this is that the resistance of the object is independent of the voltage applied across it. A device that obeys this law is said to sh ...
Ohm`s Law and Resistance Name: : :_____
... current shows a straight line (indicating a constant resistance). The slope of the line is the value of the resistance. A resistor is 'non-Ohmic' if the graph of voltage versus current is not a straight line. For example, if resistance changes as voltage changes, the graph of voltage versus current ...
... current shows a straight line (indicating a constant resistance). The slope of the line is the value of the resistance. A resistor is 'non-Ohmic' if the graph of voltage versus current is not a straight line. For example, if resistance changes as voltage changes, the graph of voltage versus current ...
L551A_M5500EX (Page 1)
... turned off under a fault condition. (See specifications for over-voltage and under-voltage thresholds) Power for each bank is cleaned by a four-stage balanced Pi filter. Banks 1 and 2 are noise isolated from each other as well as all other outlet banks. ...
... turned off under a fault condition. (See specifications for over-voltage and under-voltage thresholds) Power for each bank is cleaned by a four-stage balanced Pi filter. Banks 1 and 2 are noise isolated from each other as well as all other outlet banks. ...
84st_q
... heard. When the loudspeaker L2 is temporarily disconnected, a student finds that the intensity of the sound heard at Z increases. He finds this difficult to understand, as disconnecting L2 presumably means that the total output energy from the loudspeakers decreases. Write a short note explaining th ...
... heard. When the loudspeaker L2 is temporarily disconnected, a student finds that the intensity of the sound heard at Z increases. He finds this difficult to understand, as disconnecting L2 presumably means that the total output energy from the loudspeakers decreases. Write a short note explaining th ...
EUP7914 数据手册DataSheet 下载
... The EUP7914 is stable without any external load. This is specially important for CMOS RAM keep-alive applications. On/Off Input Operation The EUP7914 is turned off by pulling the EN pin low, and turned on by pulling it high. If this pin is floating, the regulator will always be on .To assure proper ...
... The EUP7914 is stable without any external load. This is specially important for CMOS RAM keep-alive applications. On/Off Input Operation The EUP7914 is turned off by pulling the EN pin low, and turned on by pulling it high. If this pin is floating, the regulator will always be on .To assure proper ...
expt10
... capacitor to decouple the DC voltage level of vin from the base. In the present circuit what we do instead is adjust VB to match the DC level of the source, thus making the capacitor unnecessary. The output of the amplifier is taken from the collector through capacitor Cc, so that vout has a DC leve ...
... capacitor to decouple the DC voltage level of vin from the base. In the present circuit what we do instead is adjust VB to match the DC level of the source, thus making the capacitor unnecessary. The output of the amplifier is taken from the collector through capacitor Cc, so that vout has a DC leve ...
RT8580 - Richtek
... The current flow through inductor as charging period is detected by a current sensing circuit. As the value comes across the current limiting threshold, the N-MOSFET will be turned off so that the inductor will be forced to leave charging stage and enter discharging stage. Therefore, the inductor cu ...
... The current flow through inductor as charging period is detected by a current sensing circuit. As the value comes across the current limiting threshold, the N-MOSFET will be turned off so that the inductor will be forced to leave charging stage and enter discharging stage. Therefore, the inductor cu ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.