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Topic Description Background Location Contact Contribution to Silicon High Impedance and High Frequency devices characterization such as AttoF capacitors, sub 14nm MOSFET and advanced Bipolars Telecommunication standards multiplication and sophistication involve an increase of silicon integrated transceiver systems complexity both at RF (3G,4G,5G) and mmW (W-HDMI, imagery, radar, sensors networks) frequencies. Nowadays, thoses RX/TX systems have to be capable to support several frequency bands and to synthezise reconfigurable agile functions. In that context, very low capacitance values in the range of aF (very High Impedances) become mandatory for Digitally Tuned Oscillator design. In addition, the scaling down of silicon technologies requires the development of nanodevices (sub 14nm MOSFET and advanced Bipolar) presenting impedances of few kOhms. Consequently, it becomes very difficult to measure with enough accuracy thoses devices using conventional vector network analyzers. As a matter of fact, these equipments are dedicated to devices measurement presenting impedances near to 50Ohms. At present time, no high frequency commercial solution exists in that field to cover this need. One solution would be to develop normalized measurement system at arbitrary impedances and higher than 50Ohms. It becomes mandatory to shift reference impedance of vector network analyzer around impedances of interest. In that context and to address this need, measurement tools are going to be developed with associated methodologies in the frame of an ITN (Marie Curie Initial Training Networks) project called Nanomicrowave aiming Microwave Nanotechnology for Semiconductor and Life Sciences. A summary of this project objective is given below. To contribute to this research topic, STMicroelectronics is proposing a PhD as part of this ITN project. The student will collaborate with IEMN laboratory and Agilent company involved in the development of few GHz high impedance measurement tool. The contribution will address: Silicon test structure definition, design and implementation on advanced silicon technologies for high impedance RF measurement tools calibration aiming on wafer measurement High impedance devices (aF capacitors, sub 14nm MOSFET, Advanced Bipolar) test structures design and implementation compatible with developed measurement tools Silicon devices model extraction Elementary Digitally Tuned Capacitances development in the range of aF DCO demonstrators aF based First trial of Silicon integrated interferometers covering few GHz and associated to developed measurement tools to shift 50Ohms characteristics impedance to higher one This work will be also achieved in collaboration with ExCELSIOR project driven by IEMN laboratory aiming the development of Nanoscale tester. (excelsior-ncc.iemn.univ-lille1.fr) Master student with competencies in Microelectronics Semiconductor Physics High Frequencies Network analyzer STMicroelectronics Crolles France [email protected] 33 4 76 92 66 65 Nanomicrowave ITN objective summary Microwave technologies have a tremendous impact in modern societies as they constitute the basis of widespread communication, remote sensing and navigation systems. In addition, they are widely used as power sources in food and materials industries, in plasma processing techniques in the semiconductor industry and as surgical tools in medicine. In all these applications engineers make use of the special propagation properties of microwaves, their short wave length, its wide bandwidth and the existence of molecular, atomic or nuclear resonances at those frequencies. A common aspect of all existing applications is that they exploit the properties of microwaves interacting with objects of a size comparable or greater to their wave lengths, i.e. centimetres to millimetres. With the advent of Nanotechnologies the possibility to explore the interactions of microwaves with much smaller objects (micrometres to nanometres) is emerging as a fascinating and exciting field of research and technology development. In these conditions the near field properties of microwaves (relevant at distances several times smaller than their wave length) together with the relevance of quantum and semi classical interactions opens the access to phenomena that were completely inaccessible just a few years ago. These new phenomena are quickly being better understood and are expected to give rise to new applications in the short-mid term on fields of application such as electronics, biology, spintronics or medicine. The major objective of this project is to train a new generation of multidisciplinary researchers in the field of nanoscale microwave technologies and related emerging applications. These multidisciplinary researchers will acquire a solid multidisciplinary scientific and technical training in the field of nanoscale microwave technologies enabling them to generate new knowledge beyond the current state of the art and with the skills to transfer this knowledge into novel microwave applications in the semiconductor and life science sectors, specifically, in nano-electronics, nano-spintronics, nano-biology and nanomedicine. In addition, the researchers of the network will receive a practical training on transferable skills enabling them to access job positions in the private and public sector from where they can foster the development of new products and projects based on nanoscale microwave technologies B.2.2. S&T Quality of the Proposed Scientific and Technological Area and Research Program The research program of the NANOMICROWAVE network will be centred on the science and technology of microwaves at the nanoscale and of related emerging applications in the fields of electronics, spintronics, biology, and medicine. Microwaves are understood in the present project as electromagnetic waves with a frequency from 1 GHz to 100 GHz and a wave length in free space from cm to mm. The interaction of microwaves with matter and structures is determined on the one hand by the characteristic size of the structures, which is determined by their physical dimensions or by the homogeneity of its composition. On the other hand it is determined by the material properties and its capacity to absorb, transmit or reflect the microwave signals. At present most of the knowledge of the interaction of microwaves with systems has been obtained on systems with characteristic dimensions on the order or larger than the microwaves wave length (millimetres to centimetres). For this reason, all of the existing applications of microwave technologies exploit the properties of this interaction and these scales. At much smaller scales (micrometers to nanometres) most of the properties remains at present still largely unknown. Currently the fabrication of nanostructured materials either physically or in composition, and of nanoscale objects such as nanoparticles, nanotubes and nanowires is performed routinely in many research laboratories and private companies. In addition, the physical properties of these structures and objects (mechanical, electrical, magnetic,..) are also relatively well understood in the two extreme frequency ranges corresponding to the low frequency range (up to 100 MHz) and to the optical frequency range (above THz). However, for the microwave frequency range 1 GHz-100 GHz most of these properties at the nanoscale are still to be investigated. The main reason for this situation has been the lack of a sufficient development of theoretical and experimental techniques and tools to investigate the interaction of microwaves with matter at the nanoscale. This situation is a common one in the history of microwave technology. Due to the comparable size (within one order of magnitude) of the microwave wave lengths and of the components of a microwave system, the phase of the microwave signal can change appreciably across the dimensions of the components. As a consequence specific scientific and engineering approaches are required for microwave research and application development, which are completely distinct from the ones for the low frequency or optical frequency applications (at lower frequencies the wave length is large enough to neglect this phase variation while in the optical frequency range it is short enough so that geometric approximations remain valid). According to this, all the parts of a microwave system, from the electronics to the mechanical parts, have to be designed accurately having in mind this special property. These challenging design requirements are especially relevant in the case of systems for nanoscale applications, since they contain physical dimensions ranging over a broad range of values (from centimetres to nanometres). Within the research program of the network we will address these challenging issues and overcome their limiting effect in the development of nanoscale microwave applications.