Download FGH60N60SFD 600 V , 60 A Field S top IGBT

FGH60N60SFD
600 V, 60 A Field Stop IGBT
Features
General Description
• High Current Capability
Using novel field stop IGBT technology, Fairchild®’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
C
E
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
Collector Current
o
@ TC = 100 C
TL
V
120
A
A
@ TC = 25 C
@ TC = 25oC
378
W
Maximum Power Dissipation
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
 20
A
o
Storage Temperature Range
V
60
Maximum Power Dissipation
Tstg
Unit
600
180
o
Pulsed Collector Current
@ TC = 100 C
151
Operating Junction Temperature
TJ
Ratings
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive test, Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.33
o
C/W
RJC(Diode)
Thermal Resistance, Junction to Case
-
1.1
o
C/W
40
oC/W
RJA
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
-
1
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FGH60N60SFD Rev. C0
FGH60N60SFD 600 V, 60 A Field Stop IGBT
April 2013
Device Marking
Device
Package
Packaging
Type
FGH60N60SFD
FGH60N60SFDTU
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250A
-
0.4
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250A, VCE = VGE
4.0
5.0
6.5
V
IC = 60A, VGE = 15V
-
2.3
2.9
V
IC = 60A, VGE = 15V,
TC = 125oC
-
2.5
-
V
-
2820
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-
350
-
pF
-
140
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
22
-
ns
tr
Rise Time
-
42
-
ns
td(off)
Turn-Off Delay Time
-
134
-
ns
tf
Fall Time
-
31
62
ns
Eon
Turn-On Switching Loss
-
1.79
-
mJ
Eoff
Turn-Off Switching Loss
-
0.67
-
mJ
VCC = 400V, IC = 60A,
RG = 5, VGE = 15V,
Inductive Load, TC = 25oC
Ets
Total Switching Loss
-
2.46
-
mJ
td(on)
Turn-On Delay Time
-
22
-
ns
tr
Rise Time
-
44
-
ns
td(off)
Turn-Off Delay Time
-
144
-
ns
tf
Fall Time
-
43
-
ns
Eon
Turn-On Switching Loss
-
1.88
-
mJ
Eoff
Turn-Off Switching Loss
-
1.0
-
mJ
Ets
Total Switching Loss
-
2.88
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2008 Fairchild Semiconductor Corporation
VCC = 400V, IC = 60A,
RG = 5, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 60A,
VGE = 15V
2
-
198
-
nC
-
22
-
nC
-
106
-
nC
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FGH60N60SFD Rev. C0
FGH60N60SFD 600 V, 60 A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
TC = 25°C unless otherwise noted
Test Conditions
IF = 30A
IES = 30A, dIES/dt = 200A/s
Qrr
Diode Reverse Recovery Charge
©2008 Fairchild Semiconductor Corporation
Min.
Typ.
Max
TC = 25oC
-
2.0
2.6
TC = 125oC
-
1.8
-
TC = 25oC
-
47
-
-
179
-
TC = 25oC
-
83
-
o
-
567
-
TC =
125oC
TC = 125 C
3
Unit
V
ns
nC
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FGH60N60SFD Rev. C0
FGH60N60SFD 600 V, 60 A Field Stop IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
180
180
o
15V
150
12V
10V
120
90
60
VGE = 8V
15V
12V
10V
120
90
60
VGE = 8V
30
0
0
0
2
4
6
Collector-Emitter Voltage, VCE [V]
8
0
Figure 3. Typical Saturation Voltage
Characteristics
2
4
6
Collector-Emitter Voltage, VCE [V]
8
Figure 4. Transfer Characteristics
180
180
Common Emitter
VGE = 15V
150
o
TC = 125 C
120
Common Emitter
VCE = 20V
150
o
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
20V
150
30
90
60
o
TC = 25 C
o
TC = 125 C
120
30
90
60
30
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
0
5
0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
1
2
3
4
Gate-Emitter Voltage,VGE [V]
5
Figure 6. Saturation Voltage vs. VGE
4.0
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
20V
Collector Current, IC [A]
TC = 25 C
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
3.5
120A
3.0
2.5
60A
2.0
IC = 30A
1.5
Common Emitter
o
TC = -40 C
16
12
8
120A
4
60A
IC = 30A
1.0
25
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
©2008 Fairchild Semiconductor Corporation
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGH60N60SFD Rev. C0
FGH60N60SFD 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
120A
4
60A
IC = 30A
0
0
TC = 125 C
16
12
8
60A
4
IC = 30A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
0
20
Figure 9. Capacitance Characteristics
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
6000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
o
Gate-Emitter Voltage, VGE [V]
5000
Capacitance [pF]
120A
o
TC = 25 C
Cies
4000
3000
Coes
2000
1000
TC = 25 C
12
300V
VCC = 100V
9
200V
6
3
Cres
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
100
150
Gate Charge, Qg [nC]
200
Figure 12. Turn off Switching SOA Characteristics
500
300
10s
100
100
100s
10
Collector Current, IC [A]
Collector Current, Ic [A]
50
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
10
Safe Operating Area
o
0.01
VGE = 15V, TC = 125 C
1
1
10
100
Collector-Emitter Voltage, VCE [V]
©2008 Fairchild Semiconductor Corporation
1000
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
5
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FGH60N60SFD Rev. C0
FGH60N60SFD 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
Figure 14. Turn-off Characteristics vs.
Gate Resistance
300
6000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
Switching Time [ns]
Switching Time [ns]
100
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
td(on)
o
1000
TC = 25 C
o
TC = 125 C
td(off)
100
tf
o
TC = 25 C
o
TC = 125 C
10
10
0
10
20
30
40
Gate Resistance, RG []
0
50
20
40
50
Figure 16. Turn-off Characteristics vs.
Collector Current
500
1000
Common Emitter
VGE = 15V, RG = 5
Common Emitter
VGE = 15V, RG = 5
o
o
TC = 25 C
TC = 25 C
o
Switching Time [ns]
o
TC = 125 C
tr
100
td(on)
TC = 125 C
td(off)
100
tf
10
0
20
40
60
80
100
10
120
0
20
40
Collector Current, IC [A]
80
100
120
Figure 18. Switching Loss vs Collector Current
30
20
10
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 5
10
IC = 60A
o
TC = 25 C
o
Switching Loss [mJ]
TC = 25 C
o
TC = 125 C
Eon
Eoff
1
0.5
0
60
Collector Current, IC [A]
Figure 17. Switching Loss vs Gate Resistance
Switching Loss [mJ]
30
Gate Resistance, RG []
Figure 15. Turn-on Characteristics vs.
Collector Current
Switching Time [ns]
10
Eon
o
TC = 125 C
Eoff
1
0.1
10
20
30
40
Gate Resistance, RG []
©2008 Fairchild Semiconductor Corporation
50
0
20
40
60
80
100
120
Collector Current, IC [A]
6
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FGH60N60SFD Rev. C0
FGH60N60SFD 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Current
200
500
100
100
o
Reverse Current , IR [A]
Forward Current, IF [A]
TC = 125 C
o
TJ = 125 C
o
TJ = 25 C
10
o
TJ = 75 C
o
TC = 25 C
10
o
TC = 75 C
1
0.1
o
TC = 25 C
o
TC = 125 C
0.01
1
0
1
2
3
Forward Voltage, VF [V]
0
4
Figure 21. Stored Charge
600
Figure 22. Reverse Recovery Time
60
Reverse Recovery Time, trr [ns]
100
Stored Recovery Charge, Qrr [nC]
200
400
Reverse Voltage, VR [V]
200A/s
80
di/dt = 100A/s
60
200A/s
50
di/dt = 100A/s
40
30
40
5
20
40
5
60
20
40
60
Forward Current, IF [A]
Forward Current, IF [A]
Figure 23. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.01
0.05
0.02
0.01
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2008 Fairchild Semiconductor Corporation
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FGH60N60SFD Rev. C0
FGH60N60SFD 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics
FGH60N60SFD 600 V, 60 A Field Stop IGBT
Mechanical Dimensions
TO-247A03
©2008 Fairchild Semiconductor Corporation
8
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FGH60N60SFD Rev. C0
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2008 Fairchild Semiconductor Corporation
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FGH60N60SFD Rev. C0
FGH60N60SFD 600 V, 60 A Field Stop IGBT
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