Download FGH40T100SMD 1000 V , 40 A Field S top T rench IGBT

FGH40T100SMD
1000 V, 40 A Field Stop Trench IGBT
Features
General Description
• High Current Capability
Using innovative field stop trench IGBT technology, Fairchild®’s
new series of field stop trench IGBTs offer the optimum performance for hard switching application such as UPS, welder and
PFC applications.
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• UPS, Welder, PFC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
IF
IFM (1)
PD
TJ
Ratings
Unit
1000
V
 20
V
80
A
Collector Current
@ TC = 25oC
Collector Current
o
@ TC = 125 C
40
A
Pulsed Collector Current
@ TC = 25oC
120
A
o
Diode Forward Current
@ TC = 25 C
80
A
Diode Forward Current
@ TC = 125oC
40
A
Pulsed Diode Forward Current
@ TC = 25oC
120
A
Maximum Power Dissipation
@ TC = 25oC
333
W
Maximum Power Dissipation
@ TC = 125oC
111
Operating Junction Temperature
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
W
-55 to +175
o
C
-55 to +175
o
C
oC
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.45
o
C/W
RJC(Diode)
Thermal Resistance, Junction to Case
-
0.8
o
C/W
40
o
C/W
RJA
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
1
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FGH40T100SMD Rev. C3
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
April 2013
Device Marking
Device
Package
FGH40T100SMD
FGH40T100SMD
TO-247
Electrical Characteristics of the IGBT
Symbol
Parameter
Eco Status
Packaging Type
Qty per Tube
Tube
30ea
RoHS
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
1000
-
-
V
-
0.6
-
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
1000
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±500
nA
IC = 250uA, VCE = VGE
VGE = 0V, IC = 250 uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
4.2
5.3
6.5
V
IC = 40A, VGE = 15V
-
1.9
2.3
V
IC = 40A, VGE = 15V,
TC = 125oC
-
2.3
-
V
-
3980
5295
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
124
165
pF
-
76
115
pF
-
29
38
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
42
55
ns
td(off)
Turn-Off Delay Time
-
285
371
ns
tf
Fall Time
Eon
Turn-On Switching Loss
VCC = 600V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
-
23
30
ns
-
2.35
3.1
mJ
Eoff
Turn-Off Switching Loss
-
1.15
1.5
mJ
Ets
Total Switching Loss
-
3.5
4.6
mJ
td(on)
Turn-On Delay Time
-
27
36
ns
tr
Rise Time
-
49
64
ns
td(off)
Turn-Off Delay Time
-
285
371
ns
tf
Fall Time
-
20
26
ns
Eon
Turn-On Switching Loss
-
4.4
5.7
mJ
Eoff
Turn-Off Switching Loss
-
1.9
2.5
mJ
Ets
Total Switching Loss
-
6.3
8.2
mJ
Qg
Total Gate Charge
-
265
398
nC
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2012 Fairchild Semiconductor Corporation
VCC = 600V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 175oC
VCE = 600V, IC = 40A,
VGE = 15V
2
-
32
48
nC
-
135
203
nC
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FGH40T100SMD Rev. C3
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
TC = 25°C unless otherwise noted
Test Conditions
IF = 40A
IF =40A, dIF/dt = 200A/s
Qrr
Diode Reverse Recovery Charge
©2012 Fairchild Semiconductor Corporation
Min.
Typ.
Max
TC = 25oC
-
3.4
4.4
TC = 175oC
-
2.6
-
TC = 25oC
-
60
78
-
256
-
TC = 25oC
-
185
260
o
-
1512
-
TC =
175oC
TC = 175 C
3
Unit
V
ns
nC
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FGH40T100SMD Rev. C3
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
Electrical Characteristics of Diode
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
20V
20V
o
TC = 25 C
TC = 175 C
12V
12V
15V
Collector Current, IC [A]
100
Collector Current, IC [A]
120
o
15V
80
10V
60
40
90
10V
60
30
VGE = 8V
20
VGE = 8V
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
0
10
0
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
Collector Current, IC [A]
o
Collector Current, IC [A]
6
Figure 4. Transfer Characteristics
120
TC = 25 C
90
o
TC = 175 C
60
30
TC = 25 C
90 T = 175oC
C
60
30
0
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
3
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
80A
3
40A
2
IC = 20A
1
25
6
9
12
Gate-Emitter Voltage,VGE [V]
4
Common Emitter
o
TC = -40 C
16
12
8
80A
40A
4
IC = 20A
0
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
©2012 Fairchild Semiconductor Corporation
15
Figure 6. Saturation Voltage vs. VGE
4
Collector-Emitter Voltage, VCE [V]
2
4
Collector-Emitter Voltage, VCE [V]
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGH40T100SMD Rev. C3
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
80A
40A
4
IC = 20A
0
o
TC = 175 C
16
12
8
80A
40A
4
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
4
20
Figure 9. Capacitance Characteristics
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
10000
Gate-Emitter Voltage, VGE [V]
Capacitance [pF]
Cies
1000
Coes
100
Cres
Common Emitter
VGE = 0V, f = 1MHz
12
400V
VCC = 600V
200V
9
6
3
Common Emitter
o
o
TC = 25 C
10
0.1
TC = 25 C
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
50
100
150
200
Gate Charge, Qg [nC]
250
300
Figure 12. Turn-on Characteristics vs.
Gate Resistance
300
200
100
10s
100s
100
1ms
10 ms
DC
10
Switching Time [ns]
Collector Current, Ic [A]
0
1
*Notes:
0.1
o
1. TC = 25 C
tr
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
td(on)
o
TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0.01
1
o
TC = 175 C
10
10
100
1000 2000
Collector-Emitter Voltage, VCE [V]
©2012 Fairchild Semiconductor Corporation
0
10
20
30
40
50
Gate Resistance, RG [ ]
5
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FGH40T100SMD Rev. C3
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
2000
1000
Common Emitter
VGE = 15V, RG =10
o
TC = 25 C
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
10
o
TC = 175 C
Switching Time [ns]
Switching Time [ns]
td(off)
o
tr
100
td(on)
TC = 25 C
o
TC = 175 C
1
0
10
20
30
40
Gate Resistance, RG [ ]
10
20
50
30
40
50
60
70
80
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
10
1000
Eon
Switching Loss [uJ]
Switching Time [ns]
td(off)
100
tf
10
Common Emitter
VGE = 15V, RG = 10
Eoff
1
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
TC = 175 C
1
20
0.1
30
40
50
60
70
80
0
10
20
30
40
50
Gate Resistance, RG [ ]
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
Figure 18. Turn off Switching
SOA Characteristics
15
200
10
Eon
1
Collector Current, IC [A]
Switching Loss [mJ]
100
Eoff
Common Emitter
VGE = 15V, RG = 10
o
TC = 25 C
10
Safe Operating Area
o
o
VGE = 15V, TC = 175 C
TC = 175 C
0.1
1
20
30
40
50
60
70
1
80
©2012 Fairchild Semiconductor Corporation
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
6
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FGH40T100SMD Rev. C3
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Load Current Vs. Frequence
100
100
VCC = 600V
Collector Current, IC A]
Collector Current, Ic[A]
load Current : peak of square wave
10
1
50
Duty cycle : 50%
o
0.1
25
T = 125 C
Common Emitter
VGE = 15V
C
Powe Dissipation = 111 W
0
1k
50
75
100
125
150
175
o
Collector-Emitter Case Temperature, TC [ C]
10k
100k
1M
Switching Frequency, f [Hz]
Figure 21. Diode Forward Characteristics
Figure 22. Reverse Current
1000
80
o
Tc = 175 C
Reverse Currnet, IR [uA]
Forward Current, IF [A]
TC = 175 C
100
o
o
Tc = 75 C
10
o
Tc = 25 C
o
Tc = 25 C
o
Tc = 75 C ---
10
1
o
TC = 75 C
0.1
0.01
o
o
TC = 25 C
Tc = 175 C
1
0
1
2
3
Forward Voltage, VF [V]
4
1E-3
5
0
Figure 23. Stored Charge
200
800
1000
Figure 24. Reverse Recovery Time
500
2.0
o
o
Tc = 25 C
Tc = 25 C
o
Reverse Recovery Time, Trr [ns]
Stored Recovery Charge, Qrr [uC]
400
600
VR [V]
Tc = 175 C --1.6
dI/dt = 200A/us
1.2
100A/us
0.8
dI/dt = 200A/us
0.4
100A/us
o
Tc = 175 C ---
400
300
dI/dt = 200A/us
200
100A/us
100A/us
100
dI/dt = 200A/us
0
0.0
0
10
20
30
Forward Current, IF [A]
©2012 Fairchild Semiconductor Corporation
0
40
7
10
20
30
Forward Current, IF [A]
40
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FGH40T100SMD Rev. C3
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 25. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
0.02
PDM
0.01 0.01
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 26.Transient Thermal Impedance of Diode
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
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FGH40T100SMD Rev. C3
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
Mechanical Dimensions
TO-247A03
©2012 Fairchild Semiconductor Corporation
9
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FGH40T100SMD Rev. C3
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2012 Fairchild Semiconductor Corporation
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FGH40T100SMD Rev. C3
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
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