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Data Sheet, Rev. 2.1, Sept. 2011
BGA612
Silicon Germanium Broadband MMIC Amplifier
BDTIC
RF & Protection Devices
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BDTIC
Edition 2011-09-02
Published by Infineon Technologies AG,
81726 München, Germany
© Infineon Technologies AG 2011.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
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BGA612
BGA612, Silicon Germanium Broadband MMIC Amplifier
Revision History: 2011-09-02, Rev. 2.1
Previous Version: 2003-11-04
Page
Subjects (major changes since last revision)
All
New Chip Version with integrated ESD protection
5
Electrical Characteristics slightly changed
7-8
Figures updated
All
Document layout change
BDTIC
Trademarks
SIEGET® is a registered trademark of Infineon Technologies AG.
Data Sheet
3
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Rev. 2.1, 2011-09-02
BGA612
Silicon Germanium Broadband MMIC Amplifier
1
Silicon Germanium Broadband MMIC Amplifier
Feature
• Cascadable 50 Ω-gain block
• 3 dB-bandwidth: DC to 2.8 GHz with
17.5 dB typical gain at 1.0 GHz
• Compression point P-1dB = 7 dBm at 2.0 GHz
• Noise figure F50Ω = 2.1 dB at 2 GHz
• Absolute stable
• 70 GHz fT - Silicon Germanium technology
• 1 kV HBM ESD protection (Pin-to-Pin)
• Pb-free (RoHS compliant) package
3
4
2
1
BDTIC
SOT343
Applications
• Driver amplifier for GSM/PCS/CDMA/UMTS
• Broadband amplifier for SAT-TV & LNBs
• Broadband amplifier for CATV
Out, 3
IN, 1
GND, 2,4
Figure 1
Pin connection
Description
BGA612 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized
for a typical supply current of 20 mA.
The BGA612 is based on Infineon Technologies’ B7HF Silicon Germanium technology.
Type
Package
Marking
BGA612
SOT343
BNs
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4
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Rev. 2.1, 2011-09-02
BGA612
Electrical Characteristics
Maximum Ratings
Table 1
Maximum ratings
Parameter
Symbol
Limit Value
Unit
Device voltage
VD
ID
Iin
Pin
Ptot
TJ
TA
TSTG
2.8
V
80
mA
0.7
mA
10
dBm
225
mW
150
°C
-65... 150
°C
-65... 150
°C
1000
V
Value
Unit
Junction - soldering point
RthJS
200
1) For calculation of RthJA please refer to Application Note Thermal Resistance
K/W
Device current
Current into pin In
1)
Input power
Total power dissipation, TS < 105 °C
2)
Junction temperature
Ambient temperature range
BDTIC
Storage temperature range
ESD capability all pins (HBM: JESD22-A114) VESD
1) Valid for ZS = ZL = 50 Ω, VCC = 5 V, RBias = 135 Ω
2) TS is measured on the ground lead at the soldering point
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Thermal resistance
Parameter
Symbol
1)
2
Electrical Characteristics
Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2)
VCC = 5 V, RBias = 135 Ω, Frequency = 2 GHz, unless otherwise specified
Table 3
Electrical Characteristics
Parameter
Symbol
Values
Min.
2
|S21|
Insertion power gain
Noise figure (ZS = 50 Ω)
F50Ω
Unit
Note /
Test Condition
18.0
dB
17.5
dB
f = 0.1 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 0.1 GHz
f = 1.0 GHz
f = 2.0 GHz
Typ.
Max.
16.3
dB
1.8
dB
2.0
dB
2.1
dB
Output power at 1 dB gain
compression
P-1dB
7
dBm
Output third order intercept point
OIP3
RLin
RLout
ID
17
dBm
17
dB
17
dB
20
mA
Input return loss
Output return loss
Total device current
Data Sheet
5
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Rev. 2.1, 2011-09-02
BGA612
Refer ence Plane
Electrical Characteristics
V CC = 5V
In
Bias-T
In
RBias = 135Ω
GND
ID
GND
VD
Out
Bias-T
Out
Reference Plane
Top View
Caution:
Device Voltage VD at Pin O ut!
V D = V CC - R Bias I D
BDTIC
BGA612_Test_Circuit.vsd
Figure 2
Data Sheet
Test Circuit for Electrical Characteristics and S-Parameter
6
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Rev. 2.1, 2011-09-02
BGA612
Measured Parameters
3
Measured Parameters
2
Matching |S |, |S | = f(f)
11
22
V = 5V, R
= 135Ω, I = 20mA
Power Gain |S21| , Gma = f(f)
= 135Ω, I = 20mA
V = 5V, R
CC
Bias
20
CC
C
|S |2
−5
21
16
C
0
Gma
18
Bias
BDTIC
|S11|, |S22| [dB]
|S21|2, Gma [dB]
14
12
10
8
6
4
−10
S22
−15
S
11
−20
−25
2
0
−1
10
0
−30
−1
10
1
10
10
0
Frequency [GHz]
Output Compression Point
P−1dB = f(ID), f = 2GHz
20
20
1
18
18
2
16
16
3
14
14
P−1dB [dBm]
4
|S21|2 [dB]
10
Frequency [GHz]
Power Gain |S21| = f(ID)
f = parameter in GHz
12
6
10
8
8
12
10
8
6
6
4
4
2
2
0
1
10
0
20
40
60
0
80
I [mA]
20
40
60
80
I [mA]
D
Data Sheet
0
D
7
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Rev. 2.1, 2011-09-02
BGA612
Measured Parameters
Device Current I D = f(VCC)
R
= parameter in Ω
Device Current I D = f(TA)
V = 5V, R
= parameter in Ω
Bias
CC
80
Bias
25
0
16
27
47
24
70
120
23
60
22
68
I D [mA]
I D [mA]
50
21
135
BDTIC
40
100
20
19
30
150
150
18
20
17
10
0
16
0
1
2
3
4
5
15
−40
6
VCC [V]
−20
0
20
40
60
80
TA [°C]
Noise figure F = f(f)
VCC = 5V, R Bias = 135Ω, ZS = 50Ω
T = parameter in °C
A
3
+80°C
2.5
+25°C
2
F [dB]
−20°C
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
Data Sheet
8
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Rev. 2.1, 2011-09-02
BGA612
Package Information
4
Package Information
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
BDTIC
+0.1
0.6 -0.05
4x
0.1
0.2
M
M
A
GPS05605
Figure 3
Package Outline SOT343
0.2
2.3
8
4
Pin 1
Figure 4
Data Sheet
2.15
1.1
Tape for SOT343
9
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Rev. 2.1, 2011-09-02