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Data Sheet, Rev. 2.1, Sept. 2011
BGA614
Silicon Germanium Broadband MMIC Amplifier
RF & Protection Devices
Edition 2011-09-02
Published by Infineon Technologies AG,
81726 München, Germany
© Infineon Technologies AG 2011.
All Rights Reserved.
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circuits, descriptions and charts stated herein.
Information
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BGA614
BGA614, Silicon Germanium Broadband MMIC Amplifier
Revision History: 2011-09-02, Rev. 2.1
Previous Version: 2003-11-04
Page
Subjects (major changes since last revision)
All
New Chip Version with integrated ESD protection
5
Electrical Characteristics slightly changed
7-8
Figures updated
All
Document layout change
Trademarks
SIEGET® is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 2.1, 2011-09-02
BGA614
Silicon Germanium Broadband MMIC Amplifier
1
Silicon Germanium Broadband MMIC Amplifier
Feature
• Cascadable 50 Ω-gain block
• 3 dB-bandwidth: DC to 2.4 GHz with
19 dB typical gain at 1.0 GHz
• Compression point P-1dB = 12 dBm at 2.0 GHz
• Noise figure F50Ω = 2.1 dB at 2.0 GHz
• Absolute stable
• 70 GHz fT - Silicon Germanium technology
• 1 kV HBM ESD protection (Pin-to-Pin)
• Pb-free (RoHS compliant) package
3
4
2
1
SOT343
Applications
• Driver amplifier for GSM/PCS/CDMA/UMTS
• Broadband amplifier for SAT-TV & LNBs
• Broadband amplifier for CATV
Out, 3
IN, 1
GND, 2,4
Figure 1
Pin connection
Description
BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized
for a typical supply current of 40 mA.
The BGA614 is based on Infineon Technologies’ B7HF Silicon Germanium technology.
Type
Package
Marking
BGA614
SOT343
BOs
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4
Rev. 2.1, 2011-09-02
BGA614
Electrical Characteristics
Maximum Ratings
Table 1
Maximum ratings
Parameter
Symbol
Limit Value
Unit
Device voltage
VD
ID
Iin
Pin
Ptot
TJ
TA
TSTG
3
V
80
mA
0.7
mA
10
dBm
240
mW
150
°C
-65... 150
°C
-65... 150
°C
1000
V
Value
Unit
Junction - soldering point
RthJS
200
1) For calculation of RthJA please refer to Application Note Thermal Resistance
K/W
Device current
Current into pin In
1)
Input power
Total power dissipation, TS < 102 °C
2)
Junction temperature
Ambient temperature range
Storage temperature range
ESD capability all pins (HBM: JESD22-A114) VESD
1)Valid for ZS = ZL = 50 Ω, VCC = 5 V, RBias = 62 Ω
2) TS is measured on the ground lead at the soldering point
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Thermal resistance
Parameter
Symbol
1)
2
Electrical Characteristics
Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2)
VCC = 5 V, RBias = 62 Ω, Frequency = 2 GHz, unless otherwise specified
Table 3
Electrical Characteristics
Parameter
Symbol
Values
Min.
Insertion power gain
Noise figure (ZS = 50 Ω)
2
|S21|
F50Ω
Unit
Note /
Test Condition
19.8
dB
19.0
dB
17.5
dB
1.8
dB
2.0
dB
2.1
dB
f = 0.1 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 0.1 GHz
f = 1.0 GHz
f = 2.0 GHz
Typ.
Max.
Output power at 1 dB gain
compression
P-1dB
12
dBm
Output third order intercept point
OIP3
RLin
RLout
ID
25
dBm
18
dB
20
dB
40
mA
Input return loss
Output return loss
Total device current
Data Sheet
5
Rev. 2.1, 2011-09-02
BGA614
Refer ence Plane
Electrical Characteristics
V CC = 5V
In
Bias-T
In
RBias = 62Ω
GND
ID
GND
VD
Out
Bias-T
Out
Reference Plane
Top View
Caution:
Device Voltage VD at Pin Out!
V D = V CC - R Bias I D
BGA614_Test_Circuit.vsd
Figure 2
Data Sheet
Test Circuit for Electrical Characteristics and S-Parameter
6
Rev. 2.1, 2011-09-02
BGA614
Measured Parameters
3
Measured Parameters
Power Gain |S21|2, Gma = f(f)
V = 5V, R
= 62Ω, I = 40mA
CC
Bias
Matching |S |, |S | = f(f)
11
22
VCC = 5V, R Bias = 62Ω, I C = 40mA
C
22
0
G
ma
20
−5
18
|S21|2
|S11|, |S22| [dB]
|S21|2, Gma [dB]
16
14
12
10
8
−10
S
22
−15
S11
−20
6
4
−25
2
0
−1
10
0
−30
−1
10
1
10
10
0
Frequency [GHz]
Output Compression Point
P
= f(ID), f = 2GHz
−1dB
22
20
20
18
1
16
14
2
16
3
14
P−1dB [dBm]
18
|S21|2 [dB]
10
Frequency [GHz]
Power Gain |S | = f(I )
21
D
f = parameter in GHz
4
12
6
10
8
8
12
10
8
6
6
4
4
2
2
0
1
10
0
20
40
60
0
80
I [mA]
20
40
60
80
I [mA]
D
Data Sheet
0
D
7
Rev. 2.1, 2011-09-02
BGA614
Measured Parameters
Device Current I D = f(VCC)
RBias = parameter in Ω
Device Current I D = f(TA)
VCC = 5V,RBias = parameter in Ω
80
50
0
16
27
47
48
70
56
46
60
44
68
40
I D [mA]
I D [mA]
50
100
62
42
40
68
38
30
150
36
20
34
10
0
32
0
1
2
3
4
5
30
−40
6
VCC [V]
−20
0
20
40
60
80
TA [°C]
Noise figure F = f(f)
V = 5V, R
= 62Ω, ZS = 50Ω
CC
Bias
TA = parameter in °C
3
+80°C
2.5
+25°C
F [dB]
2
−20°C
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
Data Sheet
8
Rev. 2.1, 2011-09-02
BGA614
Package Information
4
Package Information
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
0.6 +0.1
-0.05
4x
0.1
0.2
M
M
A
GPS05605
Figure 3
Package Outline SOT343
0.2
2.3
8
4
Pin 1
Figure 4
Data Sheet
2.15
1.1
Tape for SOT343
9
Rev. 2.1, 2011-09-02