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Download SOT-723 Plastic-Encapsulate Diodes 5V0AT7 CESDLC
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Diodes CESDLC5V0AT7 Low Capacitance for ESD Protection SOT-723 DESCRIPTION The CESDLC5V0AT7 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras BDTIC and many other portable applications where board space is at a premium. 1 3 FEATURES 2 z Tow Separate Unidirectional Configurations for Protection z Low Leakage Current <0.1μA @ 5 Volts z Small Package z Low Capacitance z Complies to USB 1.1 Low Speed & Full Speed Specifications z These are Pb-Free Devices BENEFITS z Protect Tow Lines Against Transient Voltage Conditions z Minimize Power Consumption of the System z Minimize PCB Board Space TYPICAL APPLICATIONS z Instrumentation Equipment z Serial and Parallel Ports z Microprocessor Based Equipment z Notebooks, Desktops, Servers z Cellular and Portable Equipment MARKING:5C www.BDTIC.com/jcst ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current (Note 1) VC Clamping Voltage @ IPP VRWM IR VBR IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current BDTIC Maximum Ratings (Ta=25℃ unless otherwise noted) Parameter Limit Unit PD 150 mW RΘJA 833 ℃/W Tj 150 ℃ -55 ~ +150 ℃ 260 ℃ Symbol Steady State Power -- 1 Diode (Note 2) Thermal Resistance Junction−to−Ambient Above 25 °C, derate Maximum Junction Temperature Operating Junction and Storage Temperature Range Tj, Tstg Lead Solder Temperature (10 Seconds Duration) TL Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types) Device Device Marking Breakdown voltage VBR @ 1mA(Volts) Min CESDLC5V0AT7 5C 6.1 Leakage current IRM @ VRM Mon Max VRWM IRWM (μA) 6.7 7.2 5.0 0.1 Capacitance VC Max @IPP VC (V) 11 IPP (A) 2 @VR=0V Bias (pF) (Note 3) Max Capacitance @VR=3V Bias (pF) (Note 3) Max 13 1. Non-repetitive current per Figure 1. 2. Only 1 diode under power. For all 2 diodes under power, PD will be 50%. Mounted on FR-4 board with min pad. 3. Capacitance of one diode at f = 1MHz, Ta = 25°C www.BDTIC.com/jcst 9