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A Product Line of Diodes Incorporated ZXTP19020DZ 20V PNP HIGH GAIN TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -20V High current capability Max Continuous Current IC = -6A Low saturation voltage VCE(sat) < -47mV @ IC = -1A RCE(sat) = 28mΩ PD = 2.4W Complementary part number ZXTN19020DZ Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free, “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: SOT89 Moisture Sensitivity: Level 1 per J-STD-020 UL Flammability Rating 94V-0 Terminals: Matte Tin Finish Weight: 0.052 grams (Approximate) Application • • • • Power disconnect switch Battery chargers High side drivers Motor drive C SOT89 E B C C B E Top View Device symbol Pin-out Top Ordering Information (Note 3) Product ZXTP19020DZTA Notes: Marking 1M1 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. No purposefully added lead. 2. Halogen and Antimony Free. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information 1M1 1M1 = Product Type Marking Code www.BDTIC.com/DIODES ZXTP19020DZ Datasheet Number: DS33733 Rev. 2 - 2 1 of 7 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP19020DZ Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Emitter-Base Voltage Continuous Collector Current (Note 6) Base current Peak Pulse Current Symbol VCBO VCEO VECO VEBO IC IB ICM Value -25 -20 -4 -7 -6 -1 -15 Unit V V V V A A A Value 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 26.7 213 117 68 51 117 4.69 -55 to +150 Unit W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C °C/W °C/W °C/W °C/W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Linear derating factor Power Dissipation (Note 5) Linear derating factor Power Dissipation (Note 6) Linear derating factor Power Dissipation (Note 7) Linear derating factor Power Dissipation (Note 8) Linear derating factor Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range Notes: Symbol PD PD PD PD PD RθJA RθJA RθJA RθJA RθJL TJ, TSTG 4. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 5. Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 7. As note 6 above measured at t<5 seconds. 8. Junction to case (collector tab). Typical VCE(sat) 10 Limited 1 DC 1s 100ms 100m Single Pulse T amb=25°C 10ms 1ms 100µs 50mm X 50mm 2oz Cu 10m 100m 1 10 -VCE Collector-Emitter Voltage (V) Max Power Dissipation (W) -IC Collector Current (A) Thermal Characteristics 2.4 50mm X 50mm 2oz Cu 2.0 25mm X 25mm 1.6 1oz Cu 1.2 15mmX15mm 1oz Cu 0.8 0.4 0.0 0 Safe Operating Area 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve www.BDTIC.com/DIODES ZXTP19020DZ Datasheet Number: DS33733 Rev. 2 - 2 2 of 7 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP19020DZ 120 100 T amb=25°C 100 Maximum Power (W) Thermal Resistance (°C/W) Thermal Characteristics (- Continued) 15mm X 15mm 1oz Cu 80 D=0.5 60 40 D=0.2 Single Pulse 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 Single Pulse T amb=25°C 15mm X 15mm 1oz Cu 10 1 100µ 1k 1m Pulse Width (s) 10 100 1k Pulse Width (s) 100 70 T amb=25°C Maximum Power (W) Thermal Resistance (°C/W) 1 Pulse Power Dissipation Transient Thermal Impedance 60 25mm X 25mm 1oz Cu 50 40 D=0.5 30 Single Pulse 20 D=0.2 D=0.05 10 Single Pulse T amb=25°C 25mm X 25mm 1oz Cu 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1 100µ 1k 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 100 50 T amb=25°C 40 50mmX 50mm 2oz Cu Maximum Power (W) Thermal Resistance (°C/W) 10m 100m 30 D=0.5 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Single Pulse T amb=25°C 50mmX 50mm 2oz Cu 10 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation www.BDTIC.com/DIODES ZXTP19020DZ Datasheet Number: DS33733 Rev. 2 - 2 1k 3 of 7 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP19020DZ Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Notes 9) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO Min -25 -20 Typ. -55 -50 Max - Unit V V BVECX -4 -8.6 - V BVECO -4 -8.6 - V IE = -100µA BVEBO -7 300 200 65 - -50 -500 -50 900 -47 -130 -145 -275 -1100 -1000 V IE = -100µA VCB = -25V VCB = -25V, TA = 100°C VEB = -5.6V IC = -100mA, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = -15A, VCE = -2V IC = -1A, IB = -100mA IC = -1A, IB = -10mA IC = -2A, IB = -40mA IC = -6A, IB = -300mA IC = -6A, IB = -300mA IC = -6A, VCE = -2V IC = -50mA, VCE = -10V, f = 50MHz VEB = -0.5V, f = 1MHz VCB = -10V, f = 1MHz Collector-Emitter Saturation Voltage (Notes 9) VCE(sat) Base-Emitter Saturation Voltage (Notes 9) Base-Emitter Turn-on Voltage (Notes 9) VBE(sat) VBE(on) - -8.2 < -1 < -1 450 290 110 25 -40 -100 -115 -225 -1000 -865 fT - 176 - MHz Cibo Cobo td tr ts tf - 36 23 18.4 266 49.6 400 45 - pF pF ns ns ns ns Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC current transfer Static ratio (Notes 9) hFE - Transitional Frequency (Notes 9) Input Capacitance Output capacitance Delay time Rise time Storage time Fall time Notes: nA nA - mV mV mV Test Condition IC = -100µA IC = -10mA IE = -100µA, RBC < 1kΩ or 0.25V > VBC > -0.25V VCC = -10V, IC = -1A, IB1 = -IB2 =-50mA 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%. www.BDTIC.com/DIODES ZXTP19020DZ Datasheet Number: DS33733 Rev. 2 - 2 4 of 7 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP19020DZ Typical Electrical Characteristics 1 0.4 Tamb=25°C IC/IB=10 IC/IB=100 - VCE(SAT) (V) - VCE(SAT) (V) 0.3 100m IC/IB=50 10m IC/IB=20 0.2 150°C 100°C 0.1 25°C IC/IB=10 1m 1m 10m 100m 1 - IC Collector Current (A) -55°C 0.0 10m 10 100m 1 - IC Collector Current (A) 10 VCE(SAT) v IC VCE(SAT) v IC 1.2 150°C 800 100°C 600 1.0 500 0.8 25°C 400 0.6 300 0.4 -55°C 0.2 200 0.0 1m 1.0 - VBE(SAT) (V) 1.4 1.2 IC/IB=10 700 Typical Gain (hFE) Normalised Gain 1.6 VCE=2V 25°C -55°C 0.8 0.6 150°C 100°C 0.4 100 10m 100m 1 - IC Collector Current (A) 10 0.2 1m 0 10m 100m 1 - IC Collector Current (A) hFE v IC 10 VBE(SAT) v IC 1.2 100 1.0 -55°C - VBE(ON) (V) 25°C 0.8 0.6 150°C 0.4 100°C 0.2 1m 10m 100m 1 - IC Collector Current (A) Capacitance (pF) VCE=2V f = 1MHz 80 60 40 20 10 0 Cobo 2 4 6 8 10 12 14 16 18 20 - Voltage(V) Capacitance v Voltage VBE(ON) v IC www.BDTIC.com/DIODES ZXTP19020DZ Datasheet Number: DS33733 Rev. 2 - 2 5 of 7 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP19020DZ Package Outline Dimensions R0 D1 .2 00 C E SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm H L B e B1 e1 8° (4 X ) A D Suggested Pad Layout X1 X2 (2x) Y1 Y3 Y4 Y2 Y C Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X (3x) www.BDTIC.com/DIODES ZXTP19020DZ Datasheet Number: DS33733 Rev. 2 - 2 6 of 7 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP19020DZ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com www.BDTIC.com/DIODES ZXTP19020DZ Datasheet Number: DS33733 Rev. 2 - 2 7 of 7 www.diodes.com November 2011 © Diodes Incorporated