Download μ PA2379T1P Data Sheet

Preliminary Data Sheet
μPA2379T1P
R07DS0703EJ0100
Rev.1.00
Mar 19, 2012
N-CHANNEL MOSFET FOR SWITCHING
DESCRIPTION
The μPA2379T1P is a switching device, which can be driven directly by a 2.5 V power source.
The μPA2379T1P features a low on-state resistance and excellent switching characteristics, and is suitable for single
cell LiB application.
FEATURES
• 2.5 V drive available
• Ultra Low on-state resistance
⎯ RSS(on)1 = 11.9 mΩ MAX. (VGS = 4.5 V, IS = 4.0 A)
⎯ RSS(on)2 = 12.8 mΩ MAX. (VGS = 4.0 V, IS = 4.0 A)
⎯ RSS(on)3 = 13.0 mΩ MAX. (VGS = 3.8 V, IS = 4.0 A)
⎯ RSS(on)4 = 17.6 mΩ MAX. (VGS = 3.1 V, IS = 4.0 A)
⎯ RSS(on)5 = 26.0 mΩ MAX. (VGS = 2.5 V, IS = 4.0 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
Part No.
μPA2379T1P-E1-A∗1
Lead Plating
Ni/Au
Packing
Reel 5000 p/reel
Package
6-pin EFLIP-LGA
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Item
Source to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Source Current (DC) ∗1
Source Current (pulse) ∗2
Total Power Dissipation (2 units) ∗1
Channel Temperature
Storage Temperature
Note:
Symbol
VSSS
VGSS
IS(DC)
IS(pulse)
PT1
Tch
Tstg
Ratings
12.0
±8.0
±8.0
±80
1.8
150
−55 to +150
Unit
V
V
A
A
W
°C
°C
∗
1. Mounted on ceramic board of 50 cm2 ×1.0 mmt
2. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
Page 1 of 10
μPA2379T1P
Chapter Title
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Zero Gate Voltage Source Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance ∗1
Source to Source On-state
Resistance ∗1
ISSS
IGSS
VGS(off)
| yfs |
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
RSS(on)5
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Body Diode Forward Voltage ∗1
VF(S-S)
MIN.
0.5
6.0
6.6
6.6
6.6
7.3
9.0
TYP.
MAX.
Unit
Test Conditions
μA
μA
0.85
1
±10
1.5
VSS = 12 V, VGS = 0 V, TEST CIRCUIT 1
VGS = ±8 V, VSS = 0 V, TEST CIRCUIT 2
VSS = 10 V, IS = 1.0 mA, TEST CIRCUIT 3
VSS = 5 V, IS = 4.0 A, TEST CIRCUIT 4
VGS = 4.5 V, IS = 4.0 A, TEST CIRCUIT 5
VGS = 4.0 V, IS = 4.0 A, TEST CIRCUIT 5
VGS = 3.8 V, IS = 4.0 A, TEST CIRCUIT 5
VGS = 3.1 V, IS = 4.0 A, TEST CIRCUIT 5
VGS = 2.5 V, IS = 4.0 A, TEST CIRCUIT 5
VSS = 10 V,
VGS = 0 V,
f = 1.0 MHz, TEST CIRCUIT 7
VDD = 12 V, IS = 8.0 A,
VGS = 4.0 V,
RG = 6.0 Ω,
TEST CIRCUIT 8
9.4
9.9
10.0
12.0
16.0
1480
590
520
11.1
41
30
74
20
0.8
11.9
12.8
13.0
17.6
26.0
V
S
mΩ
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
μs
μs
μs
μs
nC
V
VDD = 9.6 V, VG1S1 = 4.0 V, IS = 4.0 A,
TEST CIRCUIT 9
IF = 8.0 A, VGS = 0 V, TEST CIRCUIT 6
Note: ∗1. Pulsed test
Both the FET1 and the FET2 are measured. Test circuits are example of measuring the FET1 side.
TEST CIRCUIT 1 ISSS
S2
G2
A
VSS
TEST CIRCUIT 2 IGSS
When FET1 is
measured,
between GATE
and SOURCE of
FET2 are shorted.
S2
G2
G1
AA
VGS
S1
G1
TEST CIRCUIT 3 VGS(off)
When FET1 is
measured, between
GATE and
SOURCE of FET2
are shorted.
S1
TEST CIRCUIT 4 | yfs |
ΔIS/ΔVGS
S2
G2
A
A
AA
G1
G1
VSS
VGS
VSS
VGS
S1
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
S2
G2
S1
Page 2 of 10
μPA2379T1P
Chapter Title
TEST CIRCUIT 6 VF(S-S)
When FET1 is
4.5 V
measured, FET2 is
added VGS + 4.5 V.
TEST CIRCUIT 5 RSS(on)
S2
VSS/IS
G2
IS
S2
IF
G2
VSS
G1
VSS
V
G1
VGS
V
VGS
=0V
S1
S1
TEST CIRCUIT 7
Ciss
Coss
Crss
S2
G2
S2
S2
VSS
Capacitance
Bridge
G1
G2
G2
VSS
VSS
G1
G1
Capacitance
Bridge
Capacitance
Bridge
S1
S1
S1
TEST CIRCUIT 8 td(on), tr, td(off), tf
S2
VGS
G2
VGS
V
Wave Form
RL
0
VGS
10%
90%
VSS
G1
PG.
VGS
0
VSS
RG
Wave Form
VDD
τ
S1
VSS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 9 QG
S2
A
A
G2
IG = 2 mA
RL
G1
PG.
50 Ω
VDD
S1
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
Page 3 of 10
μPA2379T1P
Chapter Title
DERATING FACTOR OF FORWARD BIAS SAFE
TOTAL POWER DISSIPATION vs.
OPERATING AREA
AMBIENT TEMPERATURE
2
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
Mounted on ceramic board
of 50 cm2 x 1.0 mmt
1.6
1.2
0.8
0.4
0
0
0
25
50
75
100
125
150
175
0
TA - Ambient Temperature - °C
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
IS – Source Current - A
1000
100
RSS(on) Limited
(VGS = 4.5 V)
PW
=
30
0
μs
10
IS(DC)
1
0.1
DC
Single Pulse
P(FET1) : P(FET2) = 1:1
Mounted on ceramic board
of 50 cm2 x 1.0 mmt
0.01
0.01
0.1
1
10
100
VSS – Source to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Single pulse
P(FET1) : P(FET2) =1:1
100
10
Mounted on ceramic board (50 cm2 x 1.0 mmt)
1
0.1
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
Page 4 of 10
μPA2379T1P
Chapter Title
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
10
80
3.1 V
2.5 V
60
50
IS - Source Current - A
IS - Source Current - A
70
3.7 V
4.0 V
VGS = 4.5 V
40
30
20
TA = 125°C
75°C
25°C
−25°C
1
0.1
TEST
CIRCUIT 3
VSS = 10 V
Pulsed
0.01
TEST CIRCUIT 5
Pulsed
10
0.001
0
0
0.5
1
1.5
2
2.5
0
3
1.5
2
GATE TO SOURCE CUT-OFF VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
vs. CHANNEL TEMPERATURE
SOURCE CURRENT
2.5
100
| yfs | - Forward Transfer Admittance - S
1.4
1.2
1
0.8
0.6
0.4
TEST CIRCUIT 3
VSS = 10 V
ID = 1.0 mA
0.2
0
-50
0
50
100
150
TA = 125°C
75°C
25°C
−25°C
10
1
TEST CIRCUIT 4
VSS = 5 V
Pulsed
0.1
0.01
0.1
Tch - Channel Temperature - °C
VGS = 2.5 V
20
15
3.1 V
10
4.0 V
4.5 V
5
0
0.01
0.1
1
10
IS - Source Current - A
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
100
RSS(on) - Source to Source On-state Resistance - mΩ
vs. GATE TO SOURCE VOLTAGE
30
TEST CIRCUIT 5
Pulsed
10
SOURCE TO SOURCE ON-STATE RESISTANCE
vs. SOURCE CURRENT
25
1
IS - Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE
RSS(on) - Source to Source On-state Resistance - mΩ
1
VGS - Gate to Source Voltage - V
VSS - Source to Source Voltage - V
VGS(off) - Gate to Source Cut-off Voltage - V
0.5
50
TEST CIRCUIT 5
IS = 4.0 A
Pulsed
40
30
20
10
0
0
2
4
6
8
10
VGS - Gate to Source Voltage - V
Page 5 of 10
μPA2379T1P
Chapter Title
SOURCE TO SOURCE ON-STATE RESISTANCE
CAPACITANCE vs. SOURCE TO SOURCE VOLTAGE
25
10000
Ciss, Coss, Crss - Capacitance - pF
RSS(on) - Source to Source On-state Resistance - mΩ
vs. CHANNEL TEMPERATURE
VGS = 2.5 V
3.1 V
20
15
10
4.0 V
4.5 V
5
TEST CIRCUIT 5
IS = 4.0 A
Pulsed
0
Ciss
1000
Crss
100
TEST CIRCUIT 7
VGS = 0 V
f = 1.0 MHz
10
-50
0
50
100
150
0.1
Tch - Channel Temperature - °C
1
10
100
VSS - Source to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
4
VGS - Gate to Source Voltage - V
1000
td(on), tr, td(off), tf - Switching Time - μs
Coss
td(off)
100
tf
tr
10
td(on)
TEST CIRCUIT 8
VDD = 12 V
VGS = 4.0 V
RG = 6.0 Ω
1
VDD = 2.4 V
6.0 V
9.6 V
3
2
1
TEST CIRCUIT 9
IS = 4.0 A
0
0.1
1
10
IS - Source Current - A
0
5
10
15
20
25
QG - Gate Charge - nC
SOURCE TO SOURCE DIODE FORWARD VOLTAGE
IF - Diode Forward Current - A
100
0V
10
VGS = 2.5 V
1
0.1
TEST CIRCUIT 6
Pulsed
0.01
0
0.5
1
1.5
2
VF(S-S) - Source to Source Voltage - V
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
Page 6 of 10
μPA2379T1P
Chapter Title
Example of application circuit
LI-ion battery (1 cell) protection circuit
Lithium-Ion battery pack
Protection circuit
P+
LithiumIon battery
cell
Battery protection IC
P−
μ PA2379T1P
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
Page 7 of 10
μPA2379T1P
Chapter Title
PACKAGE DRAWINGS (UNIT: mm)
6-pin EFLIP-LGA
! "#$%
& ' "#$%
± ± )
)
± - f (
*+,
) *+)
)*+) *+, Equivalent Circuit
FET1
FET2
Gate1
Gate2
Gate
Protection
Diode
Source2
Source1
Body Diode
Remark
The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
Page 8 of 10
μPA2379T1P
Chapter Title
USAGE CAUTIONS
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the following
contents. If used exceeding recommended conditions, there is a possibility of causing the device and characteristic
degradation.
1. This device is very thin device and should be handled with caution for mechanical stress. The distortion applied to
the device should become below 2000 × 10-6. If the distortion exceeds 2000 × 10-6, the characteristic of a device
may be degraded and it may result in failure.
2. Please do not damage the device when you handle it. The use of metallic tweezers has the possibility of giving the
wound. Mounting with the nozzle with clean point is recommended.
3. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared
reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result failure.
4. When you wash the device mounted the board, carry out within our recommended conditions. If washed exceeding
the conditions, the characteristic of a device may be degraded and it may result in failure.
5. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance directly. If
it touches, the characteristic of a device may be degraded and it may result in failure.
6. Only the epoxy resin of the semiconductor grade is recommended as coating material.
7. Please refer to Figure 2 as an example of the Mounting Pad. Optimize the land pattern in consideration of density,
appearance of solder fillets, common difference, etc in an actual design.
8. The marking side of this device is an internal electrode. Please neither contact with terminals of other parts nor take
out the electrode.
Figure 1 Recommended soldering conditions of INFRARED REFLOW
Maximum temperature (Package's surface temperature)
Time at maximum temperature
Time of temperature higher than 220˚C
Preheating time at 160 to 180˚C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (Mass percentage)
: 260˚C or below
: 10 s or less
: 60 s or less
: 60 to 120 s
: 3 times
: 0.2% or less
(Main heating)
to 10 s
Package's surface
temperature (˚C)
260˚C MAX.
220˚C
180˚C
to 60 s
160˚C
60 to 120 s
(Preheating)
Time(s)
Infrared Reflow Temperature Profile
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
Page 9 of 10
μPA2379T1P
Chapter Title
Figure 2
The example of the Mounting Pad (Unit : mm)
B Figure 3
The unit orientation
Top View
R07DS0703EJ0100 Rev.1.00
Mar 19, 2012
S2
S1
G2
G1
S2
S1
Page 10 of 10
μPA2379T1P Data Sheet
Revision History
Rev.
Date
Page
1.00
Mar 19, 2012
−
Description
Summary
First Edition Issued
All trademarks and registered trademarks are the property of their respective owners.
C-1