Download STGW60H65F

STGW60H65F
60 A, 650 V field stop trench gate IGBT
Datasheet − production data
Features
■
High speed switching
■
Tight parameter distribution
■
Safe paralleling
■
Low thermal resistance
■
6 µs short-circuit withstand time
■
Lead free package
2
3
1
Applications
TO-247
■
Photovoltaic inverters
■
Uninterruptible power supply
■
Welding
■
Power factor correction
■
High switching frequency converters
Figure 1.
Internal schematic diagram
Description
Using advanced proprietary trench gate and field
stop structure, this IGBT leads to an optimized
compromise between conduction and switching
losses maximizing the efficiency for high
switching frequency converters. Furthermore, a
slightly positive VCE(sat) temperature coefficient
and a very tight parameter distribution result in an
easier paralleling operation.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STGW60H65F
GW60H65F
TO-247
Tube
July 2012
Doc ID 019012 Rev 4
This is information on a product in full production.
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12
Electrical ratings
1
STGW60H65F
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
650
V
IC
Continuous collector current at TC = 25 °C
120
A
IC
Continuous collector current at TC = 100 °C
60
A
Pulsed collector current
240
A
VGE
Gate-emitter voltage
± 20
V
PTOT
Total dissipation at TC = 25 °C
360
W
6
µs
- 55 to 150
°C
VCES
ICP (1)
Short-circuit withstand time at VCC = 400 V,
VGE = 15 V
tSC
TSTG
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
2/12
Storage temperature range
Operating junction temperature
TJ
1.
Parameter
Thermal data
Parameter
RthJC
Thermal resistance junction-case
RthJA
Thermal resistance junction-ambient
Value
Unit
0.35
°C/W
50
°C/W
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STGW60H65F
2
Electrical characteristics
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4.
Symbol
Static
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Typ.
Max.
650
Unit
V
VGE = 15 V, IC = 60 A
Collector-emitter saturation
VGE = 15 V, IC = 60 A
voltage
TJ = 125 °C
1.9
VCE(sat)
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
6.0
ICES
Collector cut-off current
(VGE = 0)
VCE = 650 V
25
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Max.
Unit
-
pF
pF
pF
Table 5.
Symbol
Qg
Parameter
Test conditions
VCE = 25 V, f = 1 MHz, VGE=0
Min.
Typ.
-
7150
275
140
Total gate charge
VCC = 400 V, IC = 60 A,
VGE = 15 V
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Table 6.
Symbol
V
Dynamic
Input capacitance
Output capacitance
Reverse transfer
capacitance
Cies
Coes
Cres
V
2.1
217
nC
67
nC
97
nC
Switching on/off (inductive load)
Parameter
Test conditions
Min.
Typ.
(1)
Turn-on delay time
td(on)
(1)
Current rise time
tr
(di/dt)on (1) Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
-
65
30
2000
td(on) (1)
tr (1)
(di/dt)on(1)
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
TJ = 125 °C
-
63
33
1800
Turn-on delay time
Current rise time
Turn-on current slope
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Max.
Unit
-
ns
ns
A/µs
-
ns
ns
A/µs
3/12
Electrical characteristics
Table 6.
STGW60H65F
Switching on/off (inductive load)
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
-
35
180
43
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
TJ = 125 °C
-
46
210
85
-
ns
ns
ns
1. Eon is the turn-on losses when a SiC diode (STPSC1206D) is used in the test circuit in Figure 17. If the
IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and
diode are at the same temperature (25 °C and 125 °C).
Table 7.
Symbol
1.
Switching energy (inductive load)
Parameter
Test conditions
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
TJ = 125 °C
Min.
Typ.
Max.
Unit
-
0.75
1.05
1.80
-
mJ
mJ
mJ
-
0.8
1.4
2.2
-
mJ
mJ
mJ
Eon is the turn-on losses when a SiC diode (STPSC1206D) is used in the test circuit in Figure 17. If the
IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and
diode are at the same temperature (25 °C and 125 °C).
2. Turn-off losses include also the tail of the collector current.
4/12
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STGW60H65F
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics (TJ = -40 °C) Figure 3.
AM11847v1
IC (A)
V GE = 15V
220
200
AM11848v1
IC (A)
V GE = 15V
220
13V
V GE = 20V
13V
V GE = 20V
200
180
180
11V
160
160
140
140
120
120
100
100
80
80
60
60
40
11V
40
9V
20
0
Output characteristics (TJ = 25 °C)
0
Figure 4.
1
2
3
9V
20
VCE (V)
4
0
0
Output characteristics (TJ = 150 °C) Figure 5.
AM11849v1
IC (A)
V GE = 15V
220
200
1
2
3
VCE (V)
4
Transfer characteristics
AM11850v1
IC (A)
220
13V
V GE = 20V
200
V CE = 10V
180
180
160
160
11V
140
140
120
120
100
100
80
80
TJ = 150°C
60
60
9V
40
40
20
20
0
0
0
Figure 6.
1
2
3
VCE(SAT) vs. junction temperature
AM11851v1
VCE (V)
2.8
10
11
12
VGE (V)
VCE(SAT) vs. collector current
AM11852v1
VCE (V)
TJ = 150°C
V GE = 15V
TJ = 25°C
2.2
2.0
IC = 60A
TJ = -40°C
1.8
1.6
IC = 30A
1.4
1.4
1.2
-50
9
2.4
1.8
1.6
8
2.6
IC = 120A
2.2
2.0
Figure 7.
7
2.8
2.6
2.4
TJ = -40°C
6
VCE (V)
4
TJ = 25°C
-25
0
25
50
75
100
125
TJ (ºC)
1.2
30
40
50
60
70
80
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90
100
110
IC (A)
5/12
Electrical characteristics
Figure 8.
STGW60H65F
Normalized VGE(th) vs. junction
temperature
AM11853v1
VGE(th)
norm (V)
Figure 9.
Gate charge vs. gate-emitter
voltage
AM11854v1
VGE (V)
I C = 1 mA
16
14
1.0
12
10
0.9
8
6
0.8
4
2
0.7
-50
0
-25
0
25
50
75
100
125
TJ (ºC)
Figure 10. Capacitance variations (f = 1 MHz,
VGE = 0)
AM11855v1
C (pF)
0
150
200
Qg (nC)
AM11856v1
E (μJ)
V CC = 400V, V GE = 15V, RG = 10Ω
2500
Coes
EOFF
TJ = 25°C
TJ = 125°C ----
2000
Cres
1000
100
Figure 11. Switching losses vs. collector
current
Cies
10000
50
1500
EON
1000
100
500
10
0.1
1
10
VCE (V)
Figure 12. Switching losses vs. gate
resistance
20
40
60
80
100
IC (A)
Figure 13. Switching losses vs. temperature
AM11857v1
E (μJ)
0
AM11858v1
E (μJ)
3250
V CC = 400V, V GE = 15V,
IC = 60 A, TJ = 125°C
2750
V CC = 400V, V GE = 15V,
IC = 60 A, RG = 10 Ω
1400
1200
2250
EOFF
1000
1750
EOFF
800
1250
250
6/12
EON
600
750
EON
0
10
20
30
40
RG (Ω)
400
25
50
75
100
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125
TJ (°C)
STGW60H65F
Electrical characteristics
Figure 14. Turn-OFF SOA
Figure 15. Short circuit time & current vs. VGE
AM11859v1
IC (A)
AM11860v1
tsc (μs)
ISC (A)
V CC = 400V, TC = 25°C
20
100
17.5
350
tSC
15
10
12.5
V GE = 15 V, RG = 10Ω
TC = 150 °C
1
250
10
7.5
150
0.1
5
0.01
0.1
1
10
VCE (V)
100
2.5
ISC
9
10
11
12
13
14
15
50
VGE (V)
Figure 16. Maximum normalized Zth junction
to case (IGBT)
AM11861v1
K
Single
Pulse
D=0.01
D=0.02
1E-01
D=0.05
D=0.1
D=0.2
D=0.5
1E-02
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
tP (s)
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Test circuits
3
STGW60H65F
Test circuits
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
AM01504v1
Figure 19. Switching waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
Tcross
90%
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
AM01506v1
8/12
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AM01505v1
STGW60H65F
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 8.
TO-247 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.50
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Package mechanical data
STGW60H65F
Figure 20. TO-247 drawing
0075325_F
10/12
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STGW60H65F
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
05-Jul-2011
1
Initial release.
12-Jan-2012
2
Document status promoted from preliminary data to datasheet.
10-Feb-2012
3
Added: Section 2.1: Electrical characteristics (curves).
31-Jul-2012
4
Updated: Figure 8 on page 6.
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STGW60H65F
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