Download STGW60H65DF

STGW60H65DF
60 A, 650 V field stop trench gate IGBT with very fast diode
Datasheet − production data
Features
■
High speed switching
■
Tight parameters distribution
■
Safe paralleling
■
Low thermal resistance
■
6 µs short-circuit withstand time
■
Very fast soft recovery antiparallel diode
■
Lead free package
2
3
1
TO-247
Applications
■
Photovoltaic inverters
■
Uninterruptible power supply
■
Welding
■
Power factor correction
■
High switching frequency converters
Figure 1.
Internal schematic diagram
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT is the result of a compromise
between conduction and switching losses,
maximizing the efficiency of high switching
frequency converters. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in easier
paralleling operation.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STGW60H65DF
GW60H65DF
TO-247
Tube
July 2012
Doc ID 023011 Rev 3
This is information on a product in full production.
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13
Electrical ratings
1
STGW60H65DF
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
650
V
IC
Continuous collector current at TC = 25 °C
120
A
IC
Continuous collector current at TC = 100 °C
60
A
Pulsed collector current
240
A
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
120
A
IF
Continuous forward current at TC = 100 °C
60
A
IFP (1)
Pulsed forward current
240
A
PTOT
Total dissipation at TC = 25 °C
360
W
6
µs
- 55 to 150
°C
VCES
ICP (1)
VGE
Short-circuit withstand time at VCC = 400 V,
VGE = 15 V
tSC
TSTG
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
2/13
Storage temperature range
Operating junction temperature
TJ
1.
Parameter
Thermal data
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.35
°C/W
RthJC
Thermal resistance junction-case diode
1.38
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
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STGW60H65DF
2
Electrical characteristics
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4.
Symbol
Static
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Typ.
Max.
650
Unit
V
VGE = 15 V, IC = 60 A
Collector-emitter saturation
VGE = 15 V, IC = 60 A
voltage
TJ = 150 °C
1.9
VCE(sat)
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
6.0
ICES
Collector cut-off current
(VGE = 0)
VCE = 650 V
25
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Table 5.
Symbol
Cies
Coes
Cres
Qg
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 520 V, IC = 60 A,
VGE = 15 V
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Symbol
V
Dynamic
Total gate charge
Table 6.
V
2.1
Min.
Typ.
Max.
Unit
-
7150
345
125
-
pF
pF
pF
-
206
-
nC
-
60
-
nC
-
70
-
nC
Min.
Typ.
Max.
Unit
-
ns
ns
A/µs
Switching on/off (inductive load)
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
-
67
46
1043
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
TJ = 150 °C
-
64
49
990
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
-
41
165
34
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
TJ = 150 °C
-
49
169
78
-
ns
ns
ns
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Electrical characteristics
Table 7.
Symbol
1.
STGW60H65DF
Switching energy (inductive load)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
-
1.5
1.1
2.6
-
mJ
mJ
mJ
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V
TJ = 150 °C
-
2.7
1.5
4.2
-
mJ
mJ
mJ
Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 23. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C).
2. Turn-off losses include also the tail of the collector current.
Table 8.
Symbol
4/13
Collector-emitter diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 60 A
IF = 60 A, TJ = 150 °C
-
1.75
1.4
-
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 60 A, VR = 400 V,
di/dt = 1700 A/µs
-
62
930
30
-
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 60 A, VR = 400 V,
di/dt = 1630 A/µs
TJ = 150 °C
-
100
2800
58
-
ns
nC
A
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STGW60H65DF
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics (TJ = -40 °C) Figure 3.
AM11847v1
IC (A)
V GE = 15V
220
200
Output characteristics (TJ = 25 °C)
AM11848v1
IC (A)
V GE = 15V
220
13V
V GE = 20V
180
13V
V GE = 20V
200
180
11V
160
160
140
140
120
120
100
100
80
80
60
60
40
11V
40
9V
20
9V
20
0
0
0
Figure 4.
1
2
3
VCE (V)
4
0
Output characteristics (TJ = 150 °C) Figure 5.
AM11849v1
IC (A)
V GE = 15V
220
2
3
VCE (V)
4
Transfer characteristics
AM11850v1
IC (A)
220
13V
V GE = 20V
200
1
200
V CE = 10V
180
180
160
160
11V
140
140
120
120
100
100
80
80
TJ = 150°C
60
60
9V
40
20
0
0
0
Figure 6.
1
2
3
VCE(SAT) vs. junction temperature
AM11851v1
VCE (V)
2.8
TJ = -40°C
6
VCE (V)
4
TJ = 25°C
40
20
Figure 7.
7
9
10
11
TJ = 150°C
V GE = 15V
2.6
2.4
2.4
2.2
2.2
TJ = -40°C
1.8
1.6
IC = 30A
1.4
1.4
1.2
-50
TJ = 25°C
2.0
IC = 60A
1.8
1.6
VGE (V)
AM11852v1
VCE (V)
IC = 120A
2.0
12
VCE(SAT) vs. collector current
2.8
2.6
8
1.2
-25
0
25
50
75
100
125
TJ (ºC)
30
40
50
60
70
80
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90
100
110
IC (A)
5/13
Electrical characteristics
Figure 8.
STGW60H65DF
Normalized VGE(th) vs. junction
temperature
AM11853v1
VGE(th)
norm (V)
Figure 9.
Gate charge vs. gate-emitter
voltage
AM11854v1
VGE (V)
I C = 1 mA
16
14
1.0
12
10
0.9
8
6
0.8
4
2
0.7
-50
0
-25
0
25
50
75
100
125
0
TJ (ºC)
Figure 10. Capacitance variations (f = 1 MHz,
VGE = 0)
100
150
Figure 11. Switching losses vs. collector
current
10000
AM12728v1
E (µJ)
Cies
Qg (nC)
200
AM11855v1
C (pF)
V CC = 400V, V GE = 15V, RG = 10 Ω
5000
Coes
TJ = 25 °C
TJ = 125 °C
4000
Cres
1000
50
---
EON
3000
2000
100
EOFF
1000
0
10
0.1
1
10
20
VCE (V)
Figure 12. Switching losses vs. gate
resistance
40
60
80
100
IC (A)
Figure 13. Switching losses vs. temperature
AM12729v1
E (μJ)
AM12730v1
E (μJ)
V CC = 400V, V GE = 15V,
IC = 60A, TJ = 125°C
4000
VCC = 400V, VGE = 15 V,
IC = 60 A, RG = 10 Ω
2250
2000
3500
1750
3000
EON
1500
EOFF
2500
1250
EON
2000
1000
1500
750
500
1000
0
6/13
EOFF
10
20
30
40
RG (Ω)
25
50
75
100
Doc ID 023011 Rev 3
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125
TJ (°C)
STGW60H65DF
Electrical characteristics
Figure 14. Turn-OFF SOA
Figure 15. Short circuit time & current vs. VGE
AM11859v1
IC (A)
AM11860v1
tsc (μs)
ISC (A)
V CC = 400V, TC = 25°C
20
100
17.5
350
tSC
15
10
12.5
V GE = 15 V, RG = 10Ω
TC = 150 °C
1
250
10
7.5
150
0.1
5
0.01
0.1
1
10
Figure 16. Diode forward current vs. forward
voltage
AM12731v1
VF (V)
Tj =- 40°C
2.4
2.5
VCE (V)
100
ISC
9
10
11
12
13
14
Figure 17. Diode forward current vs. junction
temperature
AM12732v1
VF (V)
2.4
Tj = 25°C
2.2
50
VGE (V)
15
IF = 15 A
2.2
Tj = 150°C
IF = 30 A
IF = 60 A
2.0
2.0
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
1.0
1.0
0.8
10
15
20
25
30
35
40
45
50
55
60
IF (A)
Figure 18. Reverse recovery current as a
function of diode current slope
AM12733v1
Irm (A)
V CC = 400 V, VGE = 15 V, I C = 60 A
0.8
-50
-25
0
30
50
75
100
125
150 TJ (ºC)
Figure 19. Reverse recovery time as a function
of diode current slope
AM12734v1
trr (ns)
VCC = 400 V, VGE = 15 V, IC = 60 A
120
35
TJ = 25 °C
TJ = 125 °C
25
TJ = 25°C
TJ = 125°C
110
---
---
100
90
25
80
20
70
60
15
50
10
250
750
1250
1750
di/dt (A/μs)
40
250
750
1250
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1750
di/dt (A/μs)
7/13
Electrical characteristics
STGW60H65DF
Figure 20. Reverse recovery charge as a
function of diode current slope
AM12735v1
Qrr (µC)
2
1.8
Figure 21. Maximum normalized Zth junction
to case (IGBT)
AM11861v1
K
VCC = 400 V, VGE = 15 V, IC = 60 A
TJ = 25 °C
TJ = 125 °C
---
Single
Pulse
1.6
D=0.01
1.4
D=0.02
1E-01
1.2
D=0.05
1
D=0.1
0.8
D=0.2
0.6
D=0.5
0.4
0.2
250
750
1250
1750
di/dt (A/μs)
1E-02
1.E-05
1.E-04
1.E-03
1.E-02
Figure 22. Maximum normalized Zth junction
to case (Diode)
8/13
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1.E-01
tP (s)
STGW60H65DF
3
Test circuits
Test circuits
Figure 23. Test circuit for inductive load
switching
Figure 24. Gate charge test circuit
AM01504v1
Figure 25. Switching waveform
AM01505v1
Figure 26. Diode recovery time waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ta
tb
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
VF
dv/dt
AM01506v1
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AM01507v1
9/13
Package mechanical data
4
STGW60H65DF
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
TO-247 mechanical data
mm.
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
10/13
Typ.
5.45
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
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5.70
STGW60H65DF
Package mechanical data
Figure 27. TO-247 drawing
0075325_G
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11/13
Revision history
5
STGW60H65DF
Revision history
Table 10.
12/13
Document revision history
Date
Revision
Changes
28-Mar-2012
1
Initial release.
06-Jun-2012
2
Document status promoted from preliminary data production data.
Added: Section 2.1: Electrical characteristics (curves) on page 5.
26-Jul-2012
3
Updated: Figure 8 on page 6.
Doc ID 023011 Rev 3
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STGW60H65DF
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