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Introduction of Auxiliary Emitter
Resistors
•The introduction of REx (≈ 10 % of
RGx) leadsC to
– Limitation of equalising currents i ≤ 10
A
– Damping of oscillations
G
RE1
RE2
REn
AE
i ≤ 10 A
V1
V2
Vn
E
Introduction of Auxiliary Emitter
• The introductionResistors
of REx leads also to a
negative feedback:
– The equalising current i leads to a voltage
drop VREx at the Emitter resistors REx
fast IGBT
slow IGBT
C
G
AE
VRE2
VRE1
i
E
Introduction of Auxiliary Emitter
Resistors
The introduction of REx leads also to a
negative feedback:
The voltage drop VRE1 reduces the gate
IGBT and decreases
slow IGBT
voltage of the fastfastIGBT
C switching speed.
therewith its
The voltage drop VRE2 increases the gate
voltage of the
G slow IGBT and makes it
faster.
VRE1
VRE2
During switch off:
vice versa.
AE
i
E
Additional
proposals
•The introduction of Z-Diodes
– prevents over voltages at the gate
contacts.
C
– Therefore these clamping diodes must be
placed very close to the module
connectors
G
AE
E
Additional proposals
• The introduction of Shottky-Diodes parallel
to REx
– helps to balance the emitter voltage during
short circuit case.
– Dimensioning ≈ 100V, 1A.
Multi-levelinverter application
Topology of a multi level inverter
(Three step)
Cells in series
Robicon princip
Rectifier Circuit : Simple diode rectifier with various three-phase windings
2Q Drive capability
Patent rights: Robicon
Semiconductors in use: standard IGBT + Diode arrangement
Transformer in use: Different secondary windings, STAR, DELTA, Z,
Number of Cells: number of cell in series 100% (as by Robicon)
Multi cell system like Robicon
Vienna rectifier with H-brigde
Rectifier Circuit :Vienna rectifier
2Q Drive only
Patent rights: Zener and Prof Kolar ETH Zürich
Semiconductors in use: Not standard IGBT + Diode arrangement
Transformer in use: All secondary windings are equal
Number of Cells: Same number of cell as by Robicon
Double booster with Multi level
inverter
Rectifier Circuit : Three-phase PFC with doable booster
2Q Drive only
Patent rights: SEMIKRON International
Semiconductors in use: standard IGBT + Diode arrangement
Transformer in use: All secondary windings are equal;
Number of Cells: 1/2 number of cell as by Robicon
New
SEMiX
Flexibility
Multilevel switch
New SEMiX Module with
Semikron Patent
Halfbridges
2 x Choppers
=
Multi-Level-Modul
Multi-Level-leg with standard
SEMiX module
- Terminal GB module
DC bus capacitor
+ Terminal
Multi Level Inverter
• Why multi level inverter
– All Semiconductors must have the
half blocking voltage
– With Multi Level Topologies are
high output frequency achievable
• Small output filter
• 3 potentials available (+/-/centre point)
• Minimization of rotor losses caused by
current ripple
• Through asynchronous clocking higher
output frequencies achievable
– EMC behavior
• Potential difference only 50% of
EMC consideration during
development of inverter
EMC Standards - Generic
Previou
s no.
Present no.
Explanations and Remarks
EN
50081-1
EN 50081-1
Generic emission standard – Residential,
commercial and light industry
EN
50081-2
EN 50081-2
Generic emission standard – Industrial
environment
EN
50082-1
IEC/EN 610006-1
Generic immunity standard - Residential,
commercial and light industry
EN
50082-2
IEC/EN
61000-6-2
Generic immunity standard – Industrial
environment
-
CISPR/IEC
61000-6-3
Generic standards – Emission standard for
residential, commercial and light industrial
environments
-
IEC 61000-6-4
Generic standards – Emission standard for
industrial environments
EMC Standards - Immunity
Previous
Present
Explanations
and remarks
Tests
no.
no.
IEC 801-2
IEC/EN
61000-4-2
Electrostatic discharge immunity test
IEC 801-3
ENV 50140
IEC/EN
61000-4-3
Radiated, radio-frequency, electromagnetic field
immunity test
ENV 50204
IEC/EN
61000-4-3
Radiated electromagnetic field from digital radio
telephones – Immunity test
IEC 801-4
(1988)
IEC/EN
61000-4-4
Electrical fast transient/burst immunity test
IEC 801-5
(draft)
ENV 50142
IEC/EN
61000-4-5
Surge immunity test
IEC 801-6
(draft)
ENV 50141
IEC/EN
61000-4-6
Immunity to conducted disturbances, induced by
radio-frequency fields
IEC/EN
61000-4-8
IEC/EN
61000-4-8
Power frequency magnetic field immunity test
IEC/EN
61000-4-9
IEC/EN
61000-4-9
Pulse magnetic field immunity test
EMC Standards - Emission
Previous
PresentMeasurements
no. Explanations and remarks
no.
IEC 555-2
EN 60555-2
IEC/EN
61000-3-2
Limits for harmonic current emissions
(equipment input current ≤ 16 A per phase)
IEC 555-3
EN 60555-3
IEC/EN
61000-3-3
Limitation of voltage fluctuations and flicker in
low-voltage supply systems for equipment with
rated current ≤ 16A
CISPR 11/EN
55011
CISPR 11/EN
55011
Industrial, scientific and medical (ISM) radiofrequency equipment – Electromagnetic
disturbance characteristics – Limits and
methods of measurement
CISPR 14/EN
55014
CISPR 14/EN
55014
Limits and methods of measurement of radio
disturbance characteristics of electrical motoroperated and thermal appliances for household
and similar purposes, electric tools and similar
electrical apparatus
CISPR 22/EN
55022
CISPR 22/EN
55022
Limits and methods of measurement of radio
disturbance characteristics of information
technology (IT) equipment
Motor cable - correct
EMI rules I
• Never put input and output
together
– Input on top of the inverter
– Output on bottom of the inverter
• Don’t use painted housings – bad
connection
• Connect the isolation of
transformers to ground
EMI rules II
• Use snubber capacitors to avoid
voltage drop in the DC-Bus
voltage. Voltage drop will
generate a very high dv/dt
• Use only freewheeling diodes with
a soft recovery behavior
• Multi layer technology is avoiding
stray inductance
Fast switching IGBTs
• IGBTs generates a very high
dv/dt
– Long motor cable
• Isolation problems of the motor wire
• Over voltage on the motor terminal
through reflections
• Installation of special motor filter
– Capacitors generate leakage
current
• Sensitive short circuit monitoring
• Higher switching losses
• Installation of output reactor
EMC - Checklist
• Did you connect all heatsinks
with ground (PE)?
– use a big surface for the connection (HF-current)
– star connection
– No painted surface - clean
• Did you install cores in the
flatcables between controllerboard and power stage
• Did you design a filter board
between power stage and
controller board?
• Did you use snubber capacitors
SEMiX
and Skyper
The
platform
idea
Sixpack
Sixpack
Modula
r IPM
Springs for
snap-on
driver
Pins for
soldered
driver
The platform family (600 V,
1200 V, 1700 V)
All switch topologies available
Half bridge
Sixpack
Chopper
• Reduced to basic
functions
• 30% less components
• => less costs
• 2 IGBT-Driver versions:
SKYPER™ + SKYPER
New driver concept
™ PRO
“SKYPER”
How to handle
a IGBT
Information
How can we protect
the gate?
Information
Gate Emitter Resistor
Gate clamping
IGBT Gate protection
How should we calculate
the driver?
Proposal
•
Which gate driver is suitable for the module
SKM 200 GB 128D ?
Design parameters:
fsw = 10 kHz
Rg = 7 
Example for design
parameters
•
The suitable gate driver must
provide the required
Gate
charge (QG)
Average
Gate
current (IoutAV)
pulse current (Ig.pulse)
Demands for the gate
driver
•
Gate charge (QG) can be
determined from fig. 6 of the
SEMITRANS data sheet
The typical turn-on
and turn-off voltage of
the gate driver is
15
VGG+ = +15V
VGG- = -8V
 QG =
1390nC
-8
139
0
Determination of Gate
Charge
•
Calculation of average current:
•
IoutAV = P / U
•
with P = E * fsw = QG * U * fsw
•
U = +Ug – (-Ug)
 IoutAV = QG * fsw
= 1390nC * 10kHz = 13.9mA
Calculation of the average
current
•
Examination of the peak gate
current with minimum gate
resistance
E.g.
RG.on = RG.off = 7
Ig.puls
2.3A
≈ U / RG = 23V / 7 =
Calculation of the peak
gate current
Power explication of the Gate
Resistor
• P tot – Gate resistor
– Ptot Gate
The problem occurs when the user forgets about the peak power rating
of the gate resistor.
peak power rating of many "ordinary" SMD resistors is quite small.
resistorThe
outresistors
AV available with higher peak power
There are SMD
ratings. For example, if you take an SKD driver apart, you will see
that the gate resistors are in a different SMD package to all the other
resistors (except one or two other places that also need high peak power). The
problem was less obvious with through hole components simply because the
resistors were physically bigger.
=I
x U
– More information:
The Philips resistor data book has a good section on peak power ratings.
•
The absolute maximum ratings of
the suitable gate driver must be
equal or higher than the applied and
calculated values
Gate
charge QG = 1390nC
Average
current IoutAV =
13,9mA
Peak
gate current Ig.pulse =
Choice
of
the
suitable
gate
2.3A
driver
•
According to the applied and calculated
values, the driver e. g. SKHI 22A is able
to drive SKM200GB128D
Calculated
and
applied
values:
•
Ig.pulse =
2.3A
@ Rg = 7
•
IoutAV =
13.9mA
• fsw =
Comparison with the
10kHz
• VCE =
parameters in the driver1200V
data