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2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • • • • • www.onsemi.com 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40−80 VOLTS, 30 WATTS Low Saturation Voltage Excellent Power Dissipation Excellent Safe Operating Area Complement to PNP 2N4920G These Devices are Pb−Free and are RoHS Compliant** COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage 2N4921G 2N4922G 2N4923G VCEO Collector−Emitter Voltage 2N4921G 2N4922G 2N4923G VCB Emitter Base Voltage VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc Base Current − Continuous IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 30 0.24 W mW/_C –65 to +150 _C Collector Current − Continuous (Note 1) Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range TJ, Tstg 40 60 80 1 EMITTER Vdc 40 60 80 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements. The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). THERMAL CHARACTERISTICS (Note 2) Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 4.16 _C/W 2. Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 January, 2017 − Rev. 15 3 BASE Vdc 1 TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM YWW 2 N492xG Y = Year WW = Work Week 2N492x = Device Code x = 1, 2, or 3 G = Pb−Free Package ORDERING INFORMATION Device Package Shipping 2N4921G TO−225 (Pb−Free) 500 Units / Box 2N4922G TO−225 (Pb−Free) 500 Units / Box 2N4923G TO−225 (Pb−Free) 500 Units / Box Publication Order Number: 2N4921/D 2N4921G, 2N4922G, 2N4923G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 3) (IC = 0.1 Adc, IB = 0) 2N4921G 2N4922G 2N4923G Vdc 40 60 80 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) 2N4921G (VCE = 30 Vdc, IB = 0) 2N4922G (VCE = 40 Vdc, IB = 0) 2N4923G ICEO Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C ICEX Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − − − mAdc − 0.5 − 0.5 − 0.5 − − 0.1 0.5 − 0.1 − 1.0 40 30 10 − 150 − − 0.6 − 1.3 − 1.3 3.0 − − 100 25 − mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) Base−Emitter Saturation Voltage (Note 3) (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) Base−Emitter On Voltage (Note 3) (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) − Vdc Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob Small−Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz pF − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%. www.onsemi.com 2 2N4921G, 2N4922G, 2N4923G PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (°C) 125 150 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. APPROX +11 V TURN-ON PULSE t1 VCC RC Vin Vin VBE(off) RB Cjd<<Ceb t3 APPROX +11 V -4.0 V SCOPE t1 ≤ 15 ns 100 < t2 ≤ 500 ms t3 ≤ 15 ns Vin APPROX 9.0 V t2 TURN-OFF PULSE DUTY CYCLE ≈ 2.0% RB and RC varied to obtain desired current levels Figure 2. Switching Time Equivalent Circuit 5.0 VCC = 30 V IC/IB = 20 3.0 IC/IB = 10, UNLESS NOTED TJ = 25°C TJ = 150°C VCC = 60 V t, TIME (s) μ 2.0 1.0 0.7 0.5 tr VCC = 30 V 0.3 0.2 0.1 0.07 0.05 td VCC = 60 V VBE(off) = 2.0 V VCC = 30 V VBE(off) = 0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 3. Turn−On Time www.onsemi.com 3 500 700 1000 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N4921G, 2N4922G, 2N4923G 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 P(pk) qJC(t) = r(t) qJC qJC = 4.16°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (AMP) Figure 4. Thermal Response 10 7.0 5.0 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 1.0 ms 3.0 2.0 TJ = 150°C 1.0 0.7 0.5 dc SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C PULSE CURVES APPLY BELOW RATED VCEO 0.3 0.2 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active−Region Safe Operating Area 5.0 5.0 3.0 3.0 IC/IB = 20 t f , FALL TIME (s) μ t s′, STORAGE TIME (s) μ 1.0 0.7 0.5 IC/IB = 10 0.3 0.2 0.1 0.07 0.05 IC/IB = 20 2.0 2.0 IC/IB = 20 TJ = 25°C TJ = 150°C IB1 = IB2 ts′ = ts - 1/8 tf 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 500 700 1000 IC/IB = 10 TJ = 25°C TJ = 150°C VCC = 30 V IB1 = IB2 10 Figure 6. Storage Time 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 7. Fall Time www.onsemi.com 4 500 700 1000 hFE, DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N4921G, 2N4922G, 2N4923G VCE = 1.0 V 300 200 TJ = 150°C 100 70 50 25°C -55°C 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 1.0 0.8 108 1.0 A TJ = 25°C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 50 100 200 1.5 IC = 10 x ICES VCE = 30 V TJ = 25°C 107 1.2 IC = 2 x ICES VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0.5 A Figure 9. Collector Saturation Region 106 IC ≈ ICES 105 ICES VALUES OBTAINED FROM FIGURE 12 104 30 0 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 60 90 120 VCE(sat) @ IC/IB = 10 0 10 20 30 50 2.0 3.0 5.0 150 100 200 300 500 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base−Emitter Resistance Figure 11. “On” Voltage 104 TJ = 150°C 103 100°C 102 25°C 101 IC = ICES 100 VCE = 30 V 10-1 10-2 -0.2 1000 2000 +2.5 REVERSE -0.1 FORWARD 0 +0.1 +0.2 +0.3 +0.4 TEMPERATURE COEFFICIENTS (mV/ °C) IC, COLLECTOR CURRENT (A) μ 0.25 A 0.6 Figure 8. Current Gain 103 IC = 0.1 A +2.0 *APPLIES FOR IC/IB ≤ +1.5 +1.0 TJ = 100°C to 150°C +0.5 *qVC FOR VCE(sat) 0 -55°C to +100°C -0.5 -1.0 -1.5 qVB FOR VBE -2.0 -2.5 2.0 3.0 5.0 +0.5 hFE@VCE + 1.0V 2 VBE, BASE-EMITTER VOLTAGE (VOLTS) 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut−Off Region Figure 13. Temperature Coefficients www.onsemi.com 5 1000 2000 2N4921G, 2N4922G, 2N4923G PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AD NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE L 4 2X b2 2X e b FRONT VIEW c SIDE VIEW 3 2 1 1 2 3 FRONT VIEW BACK VIEW ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N4921/D