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Electrostatically Formed Nanowires: a Platform for Sensors,
Transistors and Electronic Devices
Prof. Yossi Rosenwaks
Faculty of Engineering, Tel-Aviv University
Email: [email protected]
Abstract
As transistors dimensions are to reach their fundamental limit in around 2025, new design
concepts are a subject of utmost importance. We present here a new paradigm in nanowire based
devices termed Electrostatically Formed Nanowires (EFN). We demonstrate its application as a
gas sensor, and multiple state transistor. We show that the EFN can function as an extremely
sensitive molecular and temperature sensor, and in various electronic applicatios.
Figure 1: Schematic illustration of an EFN device. (a) Different contact regions and the channel region are defined
by specific doping implants, assigned with n+, n, and p+. A thermal SiO2 layer with a thickness of 6 nm covers the
active sensing area. The EFN device is biased according to the electrical circuit. (b) Schematic cross-section along
the y-axis of the device showing one possible configuration of the electrostatically shaped nanowire with a volatile
organic compound (ethanol) bound to the active area of the device.
Short Biography
Prof. Yossi Rosenwaks, Dean of the Faculty of Engineering, and
the head of Tel Aviv University’s Center for Renewable Energy,
has been a professor of electrical engineering at TAU since 2005
after joining the faculty in 1996. He served as the president of the
Israel Vacuum Society (2003-2006), and as the director of TAU’s
Wolfson Center for Applied Materials Research and Gordon Center
for Energy Studies (2005-2008), and the head of the Physical
Electronics department 2011-4. Prof. Rosenwaks leads a research
group of 10 graduate students and scientists, and his current
research interests include nanoscale electrical measurements using
mainly Kelvin probe force microscopy, nanowire transistors and
sensors, charge carrier dynamics and transport in semiconductors,
and Kelvin probe microscopy of 2D materials.