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3D Transistor
Research Report
G.V. Kobyz
E.O. Proskurina
group 8V83
language instructor
Contents
•
•
•
•
•
Introduction
Main Aspects of Research
Methods of Research
Results
Conclusion
2
Introduction
• The area of the research deals with
production of digital devices:
3
The aims of the study
• To investigate the problem of reducing the size
of transistors
• To study the problem of reducing their energy
consumption
• To examine the problem of electric breakdown
of the transistor
4
Main Aspects of Research
•
•
•
•
•
Advantages and disadvantages of technology
Calculation of performance of new transistors
Measurement of power consumption
Efficiency
Areas of IT technology where it can be applied
5
Methods of Research
• Review scientific
reports
• Review scientific articles
• Empirical part in the
form of the interview
6
Results and Discussion
• 22nm 3D Transistor
provide improved
perfomance at high
voltage and an
unprecedented
perfomance gain at low
voltage
7
Results and Discussion
The pie chart of interest in the
development of new technology
18%
82%
Interested
Not interested
8
Conclusion
• Tri-gate transistors could improve
performance and energy efficiency
• Tri-gate transistors could become the basic
building block for microprocessors in future
technology nodes
9
Thank you for attention
10