Download ANNEXURE 1 Technical Specifications for Radio Frequency (RF

ANNEXURE 1
Technical Specifications for Radio Frequency (RF) MOSFETs
1.0
Deliverable items
RF MOSFETs:
Quantity: 800 Nos.
2.0 Qualification of Bidders
The bidder shall have past experiences in supplying similar items to reputed firms
including public sectors and R&D institutes, the details of which shall be submitted
along with the quotation. Offer shall be rejected, if proof of past experience of
supplying similar items is not provided along with quotation.
3.0
Technical Specifications for RF MOSFETs
1. Transistor Type: UHF LDMOS Power transistor
2. Mode of operation: CW and pulse
3. Operating drain voltage: 50 V DC
4. Power output (CW): ≥ 600 W at 650 MHz with drain bias of 50 V DC in common
source configuration
5. Operating frequency range: 500 MHz to 850 MHz or more will be acceptable.
6. Drain efficiency: ≥ 65 % at 600 W (CW), 650 MHz output power with drain bias
of 50 V DC in common source configuration
7. Power gain: ≥ 20 dB at 600 W (CW), 650 MHz output power with drain bias of
50 V DC in common source configuration
8. Device package: Gold plated flange, balanced ceramic package, 4 ribbon leads
as shown in the simplified outline (Fig. 1)
Page 1 of 4
1- Drain 1
2- Drain 2
3- Gate 1
4- Gate 2
5- Source
Fig. 1
9. Device Physical dimensions (W X L X H): ≤ 18mm x 42mm x 5mm as shown in
Fig.-1
10. Mounting: Two slots/holes with 3.3 mm diameter suitable for M3 screw as
shown in Fig.-1
11. Load mismatch tolerance: ≥ 40:1 VSWR at all phase angles with drain bias of
50 V DC in common source configuration
12. Junction to case thermal resistance: ≤ 0.15 K/W, with dissipated power of
125 W and case temperature of 80°C
13. Maximum value of junction temperature: ≥ 225 °C
14. Reverse transfer and output capacitance: Crss: ≤ 1.5 pF, Coss ≤ 75 pF
15. Maximum value of drain to source voltage: ≥ 110 V
16. Maximum value of Gate to source voltage: ≥ 11 V
17. Safety compliance: shall be RoHS compliant as per 2002/95/EC or equivalent
4.0 Application
These transistors will be employed for development of Solid State RF amplifiers
for our various particle accelerator programs at Raja Ramanna Centre for
Advanced Technology, Indore.
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5.0
Bid evaluation criteria
The bidder shall compulsorily specify make, model and values for each and every
parameter against our required specification in the following table along with
quotation.It shall be duly certified by them, along with supporting documents.
Evaluation of the bids will be based on this table. Datasheet from OEM (original
equipment manufacturer) shall also include optimum input, output impedances and
other relevant parameters for RF amplifier design.
Table 1: Technical Particulars for inclusion in quoted offer/ Compliance Sheet
1
2
3
4
5
6
Technical Particulars
Transistor Type
Mode of operation
Operating drain voltage
Power output (CW)
Operating frequency
range
Drain efficiency
7
Common source power
gain
8
Device package
9
Device Physical
dimensions
Device Mounting
10
11
Load mismatch
tolerance
12
Junction to case thermal
resistance
Required specifications
Bidder’s quoted parameter
UHF LDMOS Power transistor
CW and pulse
50 V DC
≥ 600 Watt at 650 MHz
with drain bias of 50 V DC in
common source configuration
500 MHz to 850 MHz or more will be
acceptable
≥ 65 % at 600 Watt (CW), 650 MHz
output power with drain bias of 50 V
DC in common source configuration
≥ 20 dB at 600 Watt (CW), 650 MHz
output power with drain bias of 50 V
DC in common source configuration
Gold plated flange, balanced ceramic
package, 4 ribbon leads as shown in
the simplified outline (Fig. 1).
≤ 18mm x 42mm x 5mm
as shown in Fig.-1.
Two slots/holes with 3.3 mm
diameter suitable for M3 screw as
shown in Fig.-1
≥ 40:1 VSWR at all phase angles with
drain bias of 50 V DC in common
source configuration
≤ 0.15 K/W, with dissipated power of
125 Watt and case temperature of
80°C
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13
14
15
16
17
18
19
20
Maximum value of
junction temp
Reverse transfer and
output capacitance
Maximum value of drain
to source voltage
Maximum value of Gate
to source voltage
Safety compliance
≥ 225 °C
Crss: ≤ 1.5 pF, Coss: ≤ 75 pF
≥ 110 V
≥ 11 V
should be RoHS compliant as per
2002/95/EC or equivalent
Whether supplier has
past experience in
supplying similar items?
Whether items will be
supplied in OEM pack?
Whether complete data
sheet will be supplied
with final delivery?
6.0
Acceptance criteria
Item will be accepted at our site by physical inspection and RF test/ measurement. It
will be tested for standard parameters like power gain, efficiency and RF output
power as per tender specifications. Supplier shall replace defective items (if found
after testing) at site, without any additional cost. Conformance/Compliance certificate
from supplier shall also accompany with delivery of items. Payment will be made
within 30 days after verifying technical compliance of all RF MOSFETs.
7.0
General conditions
1. Supplier shall deliver items in OEM packaging in properly sealed boxes.
2. Supplier shall ensure safe delivery to Stores Officer, IRSU, RRCAT to prevent
them from physical, environmental and electrostatic damage during transit.
3. Complete data sheet including optimum input, output impedances and other
relevant parameters for RF amplifier design from OEM shall be attached in the
offer.
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