Download XBS013S16R-G - Torex Semiconductor

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project

Document related concepts

Power inverter wikipedia , lookup

Stepper motor wikipedia , lookup

Variable-frequency drive wikipedia , lookup

Three-phase electric power wikipedia , lookup

Transistor wikipedia , lookup

Thermal runaway wikipedia , lookup

Islanding wikipedia , lookup

Electrical substation wikipedia , lookup

Electrical ballast wikipedia , lookup

History of electric power transmission wikipedia , lookup

Mercury-arc valve wikipedia , lookup

Distribution management system wikipedia , lookup

Power electronics wikipedia , lookup

TRIAC wikipedia , lookup

Rectifier wikipedia , lookup

Diode wikipedia , lookup

Switched-mode power supply wikipedia , lookup

Voltage regulator wikipedia , lookup

Resistive opto-isolator wikipedia , lookup

Power MOSFET wikipedia , lookup

Triode wikipedia , lookup

Opto-isolator wikipedia , lookup

Ohm's law wikipedia , lookup

Current source wikipedia , lookup

Stray voltage wikipedia , lookup

Buck converter wikipedia , lookup

Voltage optimisation wikipedia , lookup

Surge protector wikipedia , lookup

Mains electricity wikipedia , lookup

Alternating current wikipedia , lookup

Current mirror wikipedia , lookup

Transcript
XBS013S16R-G
ETR1604-003
Schottky Barrier Diode, 100mA, 30V Type
■FEATURES
■APPLICATIONS
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
Environmentally Friendly
●Low Current Rectification
: VF=0.71V (TYP.)
: IF(AV)=100mA
: VRM=30V
: EU RoHS Compliant, Pb Free
■ABSOLUTE MAXIMUM RATINGS
■PACKAGING INFORMATION
Ta=25℃
PARAMETER
SYMBOL
RATINGS
UNIT
VRM
30
V
VR
30
V
IF(AV)
100
mA
IFSM
0.6
A
Tj
125
℃
Tstg
-55~+150
℃
Repetitive Peak Voltage
Reverse Voltage(DC)
Forward Current(Average)
Non Continuous
Forward Surge Current
*1
Junction Temperature
Storage Temperature Range
*1:Non continuous high amplitude 60Hz half-sine wave.
Cathode Bar
■MARKING RULE
①: 0 (Product Number)
Unit : mm
②: Assembly Lot Number
SOD-723
■PRODUCT NAME
PRODUCT NAME
DESCRIPTION
XBS013S16R
SOD-723
XBS013S16R-G
SOD-723 (Halogen & Antimony free)
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*
2
*2:trr measurement circuit
Bias
TEST CONDITIONS
VF1
IF=1mA
VF2
Ta=25℃
LIMITS
MIN.
TYP.
MAX.
-
0.31
-
UNIT
V
IF=100mA
-
0.71
1
V
IR
VR=25V
-
-
2
μA
Ct
VR=0V , f=1MHz
-
6
-
pF
trr
IF=IR=10mA , irr=1mA
-
2
-
ns
Device Under Test
Oscilloscope
Pulse Generatrix
1/3
XBS013S16R-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
1000
Ta=125℃
Reverse Current : IR (uA)
Reverse Current IR (uA)
Forward Current : IF (mA)
Forward Current IF (mA)
100
-25℃
10
75℃
25℃
1
0.1
100
Ta=125℃
10
75℃
1
25℃
0.1
0.01
0
0.2
0.4
0.6
0.8
0
Forward
: VF (V)
ForwardVoltage
Voltage V
F (V)
10
20
30
Reverse
: VRR (V)
(V)
ReverseVoltage
Voltage V
(3) Forward Voltage vs. Operating Temperature
(4) Reverse Current vs. Operating Temperature
0.8
1000
Reverse Current : IR (uA)
Reverse Current IR (uA)
Forward
: VFF(V)
ForwardVoltage
Voltage V
(V)
IF=100mA
0.6
0.4
10mA
1mA
0.2
0.0
100
VR=25V
15V
5V
10
1
0.1
0.01
-50
0
50
100
150
0
Operating
Temperature : Ta
(℃)
Operating
Temperature Ta
(℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage
Average Forward Current : IFAV (mA)
Average Forward Current IFAV (mA)
Inter-Terminal
Capacity
: Ct (pF)
Inter-Terminal
Capacity Ct
(pF)
100
150
(6) Average Forward Current vs. Operating Temperature
50
40
30
20
10
Ta=25℃
250
200
150
100
50
0
0
0
10
20
Reverse
: VRR(V)
(V)
ReverseVoltage
Voltage V
2/3
50
Operating Temperature : Ta (℃)
Operating Temperature Ta (℃)
30
0
50
100
OperatingTemperature
Temperature Ta
(℃)
Operating
: Ta (℃)
150
XBS013S16R-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
3/3