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Rad Hard Products
for Satellites and Space
Rad Hard Products
 Only Re-Configurable Rad Hard FPGA
 Manufactured on QML line, special epi Process
 Utilize same geometries as non-rad Hard QML
devices to facilitate prototyping
 Guaranteed radiation specs
 Densities up to 130,000 system gates today
Total Ionizing Dose
 Testing Performed at Lockheed, Sunnyvale CA.
 Co-60 source
 Per MIL-STD-883, Method 1019, except dose rate
 Dose rate 35 rads-si/sec @25oC
 Full specified Vdd, outputs tri-stated
 Booted up with default initial configuration
 Icc plotted vs dose during radiation stress
 Full production testing within 60 minutes
60 Krads(si) with no parametric
shift or degradation
SEU/SEL
 Heavy ion SEU/SEL tests performed at
Brookhaven National Labs, Upton, NY.
 Lets up to 120MeV - cm2/mg
No latch - up @ +125°C
 Low soft upset rates
IC Process
 Advanced 0.35m epitaxial CMOS process
- Thin, high quality gate oxide
- Highly doped field oxide
- Field implant in SRAM area
- 7um epi substrate
Class T Rad Hard
 Quality Requirements Defined in Mil - PRF - 38535
(QML)
 Intended for satellite and similar applications
 Does not replace class V space product
 Supported by DSCC and JEDEC (G-12 and JC-13)
 Product will be supplied to SMDs, with radiation
(TID) guarantees
Calculated Upset Rates for LEO
Galactic
H.I.
(ups/bit-day)
9.54E-8
Galactic
p+
(ups/bit-day)
2.43E-8
Trapped
p+
(ups/bit-day)
2.50E-7
90% w/c
p+
(ups/bit)
2.78E-6
ALSF
p+
(ups/bit)
1.78E-4
90% w/c
H.I.
(ups/bit)
1.46E-6
ALSF
H.I.
(ups/bit)
1.44E-6
Notes
1. Low Earth Orbit (LEO), 680 km, 98 inclination, 100 mil Al shielding
2. Heavy ion testing was performed on Xilinx XQR devices at Brookhaven National Laboratories.
This data was used to calculate upsets from the galactic cosmic and solar flare environments.
3. Space Radiation 2.5 and CHIME models were used for the galactic and solar flare conditions.
4. Space Radiation 2.5 was used for the trapped radiation and proton contribution from the flares.
Calculated Upset Rates for GEO
Galactic
Galactic
Trapped
H.I.
p+
p+
(ups/bit-day) (ups/bit-day) (ups/bit-day)
2.34E-7
5.62E-8
-
90% w/c
p+
(ups/bit)
3.90E-6
ALSF
p+
(ups/bit)
2.49E-4
90% w/c
H.I.
(ups/bit)
7.20E-6
ALSF
H.I.
(ups/bit)
6.98E-6
Notes
1. Geostationary Earth Orbit (GEO), 35,000 km, 0 inclination, 100 mil Al shielding
2. Heavy ion testing was performed on Xilinx XQR devices at Brookhaven National Laboratories.
This data was used to calculate upsets from the galactic cosmic and solar flare environments.
3. Space Radiation 2.5 and CHIME models were used for the galactic and solar flare conditions.
4. Space Radiation 2.5 was used for the proton contribution from the flares.
Single Event Upset Test
Conclusion:
 398 upset (calculated) during a 5-year LEO mission 1,2,3,4
 Statistically, one bit upset per 110 hrs in the 800,000
configuration latches
Notes:
1) 680 km, 98° inclination, 100 mil Al shielding with two 90% worst-case flares per year and one ALSF
per mission
2) Heavy ion testing performed on Xilinx XQR devices at Brookhaven National Laboratories. This data
was used to calculate upsets from the galactic cosmic and solar flare environments.
3) Space Radiation 2.5 and CHIME models used for the galactic and solar flare conditions.
4) Space Radiation 2.5 used for the trapped radiation and proton contribution from the flares.
The XQR4000XL Family
 3 Device Sizes
- XQR4013XL (10K to 30K system gates)
- XQR4036XL (20K to 65K system gates)
- XQR4062XL (40K to 130K system gates)
 Packages
- Ceramic QFP - CB228
- Plastic QFP, BGA, DIE
 Temperature Range -55oC to +125oC
Speed Grade
-3 over Military Temperature Range
-1 over Commercial Temperature Range
XQR4000XL Radiation
Specifications
 Total Ionizing Dose
60Krads(si)
QA monitor on every wafer lot
 Latch-up Immune
LETth >100 MeV*cm2/mg @ +125oC
 Soft Upset Rate (upsets/bit-day)
2.43E-8 (Galactic p+)1
9.54E-8 (Galactic Heavy Ion) 1
Note1: For Low Earth Orbit (LEO), 680 km, 98 inclination, 100 mils Al shielding
Virtex Rad Hard
The Next Generation
 Advanced 0.25m process total dose >100K Rads
 Initial SEU evaluation in 1Q99
 Product schedules:
XQVR300
Q399
XQVR600
Q499
XQVR1000
Q100
Radiation Hardened
Product/Process Roadmap
13K to 62K Gates
Product
Introduced
0.35m
0.25m
XQR4000XL
62K gates
150K to +1M Gates
Radiation testing to
be conducted in 1Q99
1M gates
Virtex
XQV
XQVR
0.18m
1998
1999
>1M gates
Virtex II
2000
2002
Documentation
 XQR Products Data Sheet
 Single Event Effects Testing ( white paper)
 Neutron Single Events (white paper)
 Radiation Tolerance of High-Density FPGAs
( white paper)
 Radiation Hardened Products Presentation
Available at:
www.xilinx.com/products/hirel_qml.htm
Rad - Hard Configuration Memories
E2PROM
- Northrop Grumman (formerly Westinghouse, Baltimore)
- W28C64 -- 64K (8K x 8)
- W28C256 -- 256K (32 x 8)
SRAM
Honeywell
- HLX6228 -- 1M (128K x 8)
Austin
- MT5C1008XX - XXE (128K x 8)
- AS5C512K8XX - XXE (512K x 8)
SEI
- www.spaceelectronics.com