Download Lithographic masks and photoresist that are made from

Lithographic masks and photoresist that are made from programmable
polymers such as DNA with embedded optical defect metrology
BSU File Reference #147
Abstract
Central to the phenomenal success of the semiconductor industry is the ability to detect, classify, and
eventually eliminate defects during high volume manufacturing. Precise metrology is the cornerstone
for quality control in the industry. Surface analysis techniques such as AFM, TEM, SEM, and X-ray
scattering are commonly used to identify near level details of mask features, such as critical dimensions
and roughness. These techniques are also employed to inspect mask defects. However, process
variability during directed self-assembly (DSA) requires real-time, online metrology to identify mask
defects and alignment errors between the mask and lithographically defined substrates. Although DSA
of block copolymers demands new metrology, efficient wafer scale techniques have not been
developed.
Boise State University has developed technology that improves efficiency in wafer scale techniques that
allows defects to be self-identified by fluorescence, without affecting the properties of the mask. As a
result, defect metrology can be performed at a relatively high resolution and in real-time. This new
technology can be rationally designed with atomic precision, allows for features to be readily
programmed into the rectilinear coordinate system used by the semiconductor industry, can form
periodic, aperiodic, and random patterns, be enthalpically driven in material systems with the potential
for low defect concentrations, have a resolution of ~2.5 nm perpendicular to the DNA axis and 0.34 nm
along the DNA axis, be conjugated with a host of functional groups to increase their functionality, allows
for the use of embedded optical metrology through conjugation of molecular dyes, molecular
quenchers, fluorescent metal clusters or other optical readout-technologies, and allows defect locations
to be mapped with dSTORM at a resolution of 20 nm for super-resolved defect images.
Boise State is looking for a Licensee for this technology.
For More Information Contact:
Katy Ritter
Director, Office of Technology Transfer
Division of Research and Economic Development
(208) 426-5765
[email protected]
Boise State University ● Research and Economic Development ● Office of Technology Transfer
http://research.boisestate.edu/ott/