Download RM3407 - Rectron

RM3407
P-Channel Enhancement Mode Power MOSFET
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Description
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The RM3407uses advanced trench technology to provide
excellent RDS(ON), This device is suitable for use as a load
switch or in PWM applications.
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Schematic diagram
General Features
ƽ VDS = -30V,ID = -4.3A
RDS(ON) < 90mΩ @ VGS=-4.5V
RDS(ON) <52mΩ @ VGS=-10V
ƽ High power and current handing capability
Marking and pin Assignment
ƽ Lead free product is acquired
ƽ Surface mount package
Application
ƽ PWM applications
ƽ Load switch
SOT-23-3L top view
ƽ Power management
Package Marking and Ordering Information
Device Marking
3407A
Device
RM3407
Device Package
SOT23-3L
Reel Size
Tape width
Ø180mm
Quantity
8 mm
3000 units
Absolute Maximum Ratings (TA=25ćunless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
ID
-4.3
A
IDM
-20
A
PD
1.5
W
TJ,TSTG
-55 To 150
ć
RθJA
84
ć/W
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Electrical Characteristics (TA=25ćunless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-
-
-1
μA
Off Characteristics
2016-09
REV:O15
Parameter
Symbol
Condition
Min
Typ
Max
Unit
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250A
-1
-1.5
-3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-4 A
-
40
52
m
VGS=-4.5V, ID=-3A
-
48
90
m
VDS=-5V,ID=-1A
-
10
-
S
-
700
-
PF
-
120
-
PF
Crss
-
75
-
PF
Turn-on Delay Time
td(on)
-
9
-
nS
Turn-on Rise Time
tr
VDD=-15V,RL=3.6
-
5
-
nS
td(off)
VGS=-10V,RGEN=3
-
28
-
nS
Gate-Body Leakage Current
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=-15V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
-
13.5
-
nS
Total Gate Charge
Qg
-
14
-
nC
Gate-Source Charge
Qgs
-
3.1
-
nC
Gate-Drain Charge
Qgd
-
3
-
nC
-
-
-1.2
V
VDS=-15V,ID=-4A,VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-4.3A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
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RATING AND CHARACTERISTICS CURVES (RM3407)
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
-ID- Drain Current (A˅
Figure 1:Switching Test Circuit
TJ-Junction Temperature(ć)
TJ-Junction Temperature(ć)
Figure 4 Drain Current
-ID- Drain Current (A)
Rdson On-Resistance(m¡)
Figure 3 Power Dissipation
-Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
-ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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-ID- Drain Current (A)
Normalized On-Resistance
RATING AND CHARACTERISTICS CURVES (RM3407)
TJ-Junction Temperature(ć)
-Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(m¡)
Figure 7 Transfer Characteristics
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
-Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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-ID- Drain Current (A)
RATING AND CHARACTERISTICS CURVES (RM3407)
-Vds Drain-Source Voltage (V)
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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SOT-23-3L Package Information
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact
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DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in
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