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CA1-56
Elaboration, vibrational and photoluminescence studies on a new
self-organized quantum well crystal (C4H16N3)CuCl5
T. Dammak and Y. Abid
Laboratoire de Physique appliquée, Faculté des Sciences de Sfax, Université de
Sfax, B. P. 1171, 3000 Sfax, Tunisia
During the last two decades, low-dimensional semiconductor
structures have been investigated from the viewpoint of fundamental
physics and of applications in novel optical and electrical devices.
Especially, numerous studies have shown the unique optical properties
of semiconductor multiple quantum well structures, in which
Coulomb interaction between electrons and holes is enhanced by
electronic confinement and dielectric confinement effects. The latter is
due to the difference between the dielectric constant of the quantum
wells and the barrier layers. It is thought to increase the binding
energy of excitons. More recently, the hybrid organic inorganic
layered perovskite, with general formula (RNH3)2MX4 (R; CnH2n+1, X;
halogen) were extensively studied for their electrical and optical
properties.
We have prepared new semiconductor (C4H16N3)CuCl5 crystals which
are self-assembled organic–inorganic hybrid materials. The grown
crystals have been studied by X-ray diffraction, infrared absorption
and Raman scattering. We found that the title compound, abbreviated
2C6PbBr4, crystallises in a two-dimensional structure with a P21/a
space group. In the inorganic semiconductor sub-lattice, the corner
sharing CuCl6 octahedra form infinite 2D chains. The organic
C4H16N3+ ions form the insulator barriers between the inorganic
semiconductor layers. Such a packing leads to a self-assembled
multiple quantum well structure.
Transmission measurements on thin films of this material obtained by
the spin coating method and it showed characteristic absorptions of
CuCl-based layered perovskite centered at 300 and 380 nm, as well as
the photoluminescence peak at around 420 nm associated with
radiative recombinations of excitons confined within the CuCl6 layers.
The electron-hole binding energy is estimated at 300 meV.
Matériaux 2015