Download 30-2 Designing High-Current TFETs

Designing High-Current TFETs: Tunneling field-effect transistors (TFETs) operate according
to principles of quantum mechanics. They are promising for ultra-low-power applications
because they operate at low voltages, but it’s difficult to build them so that they carry useful
amounts of current. At the IEDM, researchers from Purdue University and partners will present a
design methodology for heterostructure TFETs that have a high on-current of 265 A/m at 0.18V,
and 1.95 A/m at 0.12V. These values, from calculations based on the essential physics of the
device, derive from extensive modeling and simulation of theoretical device structures.
The computer simulations above show the ballistic local density of both the ON-state (a) and
OFF-state (b) bias of a (110 )-confined triple-HJ TFET. Resonant states are circled. While the
two resonant states are clearly separated in ballistic simulations, inelastic scattering will increase
off-current due to coupling between the two states.
(Paper #30.2, “A Tunnel FET Design for High-Current, 120 mV Operation,” P. Long et al, Purdue
University/Imec/University of California, Santa Barbara/University of Virginia)