Lecture1 Introduction - inst.eecs.berkeley.edu
... – Address must be stable a setup time before WE and CS go low – And hold time after one goes high ...
... – Address must be stable a setup time before WE and CS go low – And hold time after one goes high ...
g/pdf
... Each cell stores one bit, and requires 4 – 8 transistors (6 is typical) Read: • pre-‐charge B and B to Vdd/2 • pull word line high • cell pulls B or B low, sense amp detects voltage differ ...
... Each cell stores one bit, and requires 4 – 8 transistors (6 is typical) Read: • pre-‐charge B and B to Vdd/2 • pull word line high • cell pulls B or B low, sense amp detects voltage differ ...
g/plain
... Each cell stores one bit, and requires 4 – 8 transistors (6 is typical) Read: • pre-‐charge B and B to Vdd/2 • pull word line high • cell pulls B or B low, sense amp detects voltage differ ...
... Each cell stores one bit, and requires 4 – 8 transistors (6 is typical) Read: • pre-‐charge B and B to Vdd/2 • pull word line high • cell pulls B or B low, sense amp detects voltage differ ...
Introducing Hardware
... System of pathways used for communication The most familiar parts of the bus used for data Width of data bus ...
... System of pathways used for communication The most familiar parts of the bus used for data Width of data bus ...
ROM (Read Only Memory)
... • However, more modern types such as EPROM and flash EEPROM can be erased and re-programmed multiple times; they are still described as "read-only memory" because the reprogramming process is generally infrequent, comparatively slow, and often does not permit random access writes to individual memor ...
... • However, more modern types such as EPROM and flash EEPROM can be erased and re-programmed multiple times; they are still described as "read-only memory" because the reprogramming process is generally infrequent, comparatively slow, and often does not permit random access writes to individual memor ...
introduction to information technology - e
... • It is also called the check bit. It is an extra bit attached to the end of the byte for purposes of checking for accuracy. There are two types, even parity and odd parity. It all depends on the number of on bits to determine whether it is even or odd. If the number of on bits is wrong, there will ...
... • It is also called the check bit. It is an extra bit attached to the end of the byte for purposes of checking for accuracy. There are two types, even parity and odd parity. It all depends on the number of on bits to determine whether it is even or odd. If the number of on bits is wrong, there will ...
ROM (Read Only Memory)
... them from traditional magnetic disks such as hard disk drives (HDDs) or floppy disks, which are electromechanical devices containing spinning disks and movable read/write heads. Compared with electromechanical disks, SSDs are typically less susceptible to physical shock, are usually silent, and have ...
... them from traditional magnetic disks such as hard disk drives (HDDs) or floppy disks, which are electromechanical devices containing spinning disks and movable read/write heads. Compared with electromechanical disks, SSDs are typically less susceptible to physical shock, are usually silent, and have ...
Chapter 6 : Internal Memory
... – Constrained – internal architecture and interface to the processor’s memory bus. - Asynchronous – needs wait state during memory read and write cycle. - Access time of DRAM is more compared to CPU’s clock. - CPU forced to enter wait state for one or more clocks as required. • Enhanced DRAM – Conta ...
... – Constrained – internal architecture and interface to the processor’s memory bus. - Asynchronous – needs wait state during memory read and write cycle. - Access time of DRAM is more compared to CPU’s clock. - CPU forced to enter wait state for one or more clocks as required. • Enhanced DRAM – Conta ...
Lecture 14 - Memory Organization 2
... Dynamic RAM Structure (Main Memory) • Address line is active when bit value from cell is read/written. • Write: voltage applied to the bit line. High 1, Low 0. • Read: Charge in capacitor is fed out the bit line to a reference circuit. • Readouts discharge the capacitor, which must be restored ...
... Dynamic RAM Structure (Main Memory) • Address line is active when bit value from cell is read/written. • Write: voltage applied to the bit line. High 1, Low 0. • Read: Charge in capacitor is fed out the bit line to a reference circuit. • Readouts discharge the capacitor, which must be restored ...
Slides
... of cells and create data read errors). Apply a voltage pulse based on deviation from desired level and measure resistance. If desired level of resistance is not achieved, apply another voltage pulse and measure again – until achieve the exact level Only suitable for binary cell storage It may reduce ...
... of cells and create data read errors). Apply a voltage pulse based on deviation from desired level and measure resistance. If desired level of resistance is not achieved, apply another voltage pulse and measure again – until achieve the exact level Only suitable for binary cell storage It may reduce ...
Memory Definitions
... Memory ─ A collection of storage cells together with the necessary circuits to transfer information to and from them. Random Access Memory (RAM) ─ RAM is called "random access" because any storage location can be accessed directly (independent of the physical location of the data.) Memory Addr ...
... Memory ─ A collection of storage cells together with the necessary circuits to transfer information to and from them. Random Access Memory (RAM) ─ RAM is called "random access" because any storage location can be accessed directly (independent of the physical location of the data.) Memory Addr ...
ROM Memory
... to predetermined sections of the chip called blocks. It works much faster than EEPROMs because it writes data in chunks, usually 512 bytes in size, instead of 1 byte at a time. ...
... to predetermined sections of the chip called blocks. It works much faster than EEPROMs because it writes data in chunks, usually 512 bytes in size, instead of 1 byte at a time. ...
ss2-first-term-note
... instructions. 2. The control unit must communicate with both the arithmetic logic unit and main memory. 3. The control unit uses the instruction contained in the Instruction Register to decide which circuits need to be activated. 4. The control unit co-ordinates the activities of the other two units ...
... instructions. 2. The control unit must communicate with both the arithmetic logic unit and main memory. 3. The control unit uses the instruction contained in the Instruction Register to decide which circuits need to be activated. 4. The control unit co-ordinates the activities of the other two units ...
Lecture-13
... WRITE operation: the data available in the input lines are transferred into the four binary cells of the selected word. The memory cells that are not selected are disabled. ...
... WRITE operation: the data available in the input lines are transferred into the four binary cells of the selected word. The memory cells that are not selected are disabled. ...
memory cell
... The computer loads data from read-only memory (ROM) and performs a poweron self-test (POST) to make sure all the major components are functioning properly. As part of this test, the memory controller checks all of the memory addresses with a quick read/write operation to ensure that there are no err ...
... The computer loads data from read-only memory (ROM) and performs a poweron self-test (POST) to make sure all the major components are functioning properly. As part of this test, the memory controller checks all of the memory addresses with a quick read/write operation to ensure that there are no err ...
Memory Technologies
... Magnetization-Based RAM • Data stored by magnetic devices instead of current/voltage/charge. • Realized by two ferromagnetic plates separated by a thin insulator. • One plate permanently charged while the other plate’s magnetization can be changed to match external field for data storage. • Known a ...
... Magnetization-Based RAM • Data stored by magnetic devices instead of current/voltage/charge. • Realized by two ferromagnetic plates separated by a thin insulator. • One plate permanently charged while the other plate’s magnetization can be changed to match external field for data storage. • Known a ...
Advances in Computer Random Access Memory
... conduction state of the access transistor and the floating‐body potential state of the storage transistor. The fact that TTRAM memory cell operations don't require a step‐up voltage or negative voltage, as DRAM cells do, makes the new cell design suitable for use with future finer pro ...
... conduction state of the access transistor and the floating‐body potential state of the storage transistor. The fact that TTRAM memory cell operations don't require a step‐up voltage or negative voltage, as DRAM cells do, makes the new cell design suitable for use with future finer pro ...
Faster And Lighter Conputers Possible With Nanotechnology
... and magnetic RAMs. Magnetic rings reduce crosstalk and errors during data processing ...
... and magnetic RAMs. Magnetic rings reduce crosstalk and errors during data processing ...
Lecture 2 - The PC and its components
... Back to the memory hierarchy • What if the requested data cannot be found in the main memory? • Most systems use virtual memory, i.e. the main memory acts as a cache for secondary storage, typically hard drives. • A page fault occurs and the operating system must load data from HD into RAM (slow) ...
... Back to the memory hierarchy • What if the requested data cannot be found in the main memory? • Most systems use virtual memory, i.e. the main memory acts as a cache for secondary storage, typically hard drives. • A page fault occurs and the operating system must load data from HD into RAM (slow) ...
William Sawyer
... modify a signal by controlling the movement of electrons in an evacuated space. ...
... modify a signal by controlling the movement of electrons in an evacuated space. ...
Ch_5
... configuration consists of a controller and a number of RDRAM modules connected via a common bus. • The bus includes 18 data lines (16 actual data, two parity) cycling at twice the clock rate. • There is a separate set of 8 lines (RC) used for address and control signals. There is also a clock signal ...
... configuration consists of a controller and a number of RDRAM modules connected via a common bus. • The bus includes 18 data lines (16 actual data, two parity) cycling at twice the clock rate. • There is a separate set of 8 lines (RC) used for address and control signals. There is also a clock signal ...
File - Learning@NDGTA
... • The memory unit is where the programme containing the control actions to be exercised by the microprocessor is stored and where the data is stored from the input for processing and for the output. ...
... • The memory unit is where the programme containing the control actions to be exercised by the microprocessor is stored and where the data is stored from the input for processing and for the output. ...
memory types Following are the different types of memory
... while DDR SDRAM can transfer data across the bus two times per clock, DDR2 SDRAM can perform four transfers per clock. DDR2 uses the same memory cells, but doubles the bandwidth by using the multiplexing technique. The DDR2 memory cell is still clocked at the same frequency as DDR SDRAM and SDRAM ce ...
... while DDR SDRAM can transfer data across the bus two times per clock, DDR2 SDRAM can perform four transfers per clock. DDR2 uses the same memory cells, but doubles the bandwidth by using the multiplexing technique. The DDR2 memory cell is still clocked at the same frequency as DDR SDRAM and SDRAM ce ...
Random-access memory
Random-access memory (RAM /ræm/) is a form of computer data storage. A random-access memory device allows data items to be accessed (read or written) in almost the same amount of time irrespective of the physical location of data inside the memory. In contrast, with other direct-access data storage media such as hard disks, CD-RWs, DVD-RWs and the older drum memory, the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement delays.Today, random-access memory takes the form of integrated circuits. RAM is normally associated with volatile types of memory (such as DRAM memory modules), where stored information is lost if power is removed, although many efforts have been made to develop non-volatile RAM chips. Other types of non-volatile memory exist that allow random access for read operations, but either do not allow write operations or have limitations on them. These include most types of ROM and a type of flash memory called NOR-Flash.Integrated-circuit RAM chips came into the market in the late 1960s, with the first commercially available DRAM chip, the Intel 1103, introduced in October 1970.