www.colehersee.com.au
... In a dual battery system, one battery is used for starting the engine while the other is used to power auxiliary loads. A battery selector switch enables the use of the first battery, the second battery or both batteries simultaneously. A dual battery system with a battery selector switch provides b ...
... In a dual battery system, one battery is used for starting the engine while the other is used to power auxiliary loads. A battery selector switch enables the use of the first battery, the second battery or both batteries simultaneously. A dual battery system with a battery selector switch provides b ...
CD4051, CD4051-SMD, CD4052, CD4052-SMD, CD4053
... switches having low ON impedance and very low OFF leakage current. Control of analog signals up to 20V peak-topeak can be achieved by digital signal amplitudes of 4.5V to 20V (if VDD-VSS = 3V, a VDD-VEE of up to 13V can be controlled; for VDD-VEE level differences above 13V, a VDDVSS of at least 4.5 ...
... switches having low ON impedance and very low OFF leakage current. Control of analog signals up to 20V peak-topeak can be achieved by digital signal amplitudes of 4.5V to 20V (if VDD-VSS = 3V, a VDD-VEE of up to 13V can be controlled; for VDD-VEE level differences above 13V, a VDDVSS of at least 4.5 ...
3.2 List of Faults and Alarms
... An exception occurred during an operation with the FloatingPoint data type. The error may be caused by the base system or an OA application (e.g., FBLOCKS, DCC). Fault value (r0949, interpret hexadecimal): Only for internal Siemens troubleshooting. Note: Refer to r9999 for further information about ...
... An exception occurred during an operation with the FloatingPoint data type. The error may be caused by the base system or an OA application (e.g., FBLOCKS, DCC). Fault value (r0949, interpret hexadecimal): Only for internal Siemens troubleshooting. Note: Refer to r9999 for further information about ...
... The TPS544x25 devices are PMBus 1.2 Compliant, non-isolated DC-DC converters with integrated FETs, capable of high-frequency operation and 20-A or 30-A current output from a 5 mm × 7 mm package. Highfrequency, low-loss switching, provided by an integrated NexFET™ power stage and optimized drivers, a ...
Active Harmonic Elimination in Multilevel Converters
... The modulation technique for multilevel converters is a key issue for multilevel converter control. The traditional pulse width modulation (PWM), space vector PWM, and space vector control methods do not completely eliminate specified harmonics. In addition, space vector PWM and space vector control ...
... The modulation technique for multilevel converters is a key issue for multilevel converter control. The traditional pulse width modulation (PWM), space vector PWM, and space vector control methods do not completely eliminate specified harmonics. In addition, space vector PWM and space vector control ...
this PDF file - International Journal of Automotive
... can be an npn type circuit or an SCR depending on the application. Large ICs have a large number of pin combinations, and consideration must be given to each of these when placing ESD protection circuits. In addition, in many cases multiple VCC and VSS buses may be used, which lead to added complica ...
... can be an npn type circuit or an SCR depending on the application. Large ICs have a large number of pin combinations, and consideration must be given to each of these when placing ESD protection circuits. In addition, in many cases multiple VCC and VSS buses may be used, which lead to added complica ...
5. Active Harmonic Elimination for Multilevel Converters with
... Figure 3.14: Control simulation for 5-level multilevel converter ( m 0.99 ) (a) output voltage waveform; (b) normalized FFT analysis of line-line voltage....................... 68 Figure 3.15: Control simulation for 7-level multilevel converter ( m 1.22 ) (a) output voltage waveform; (b) normali ...
... Figure 3.14: Control simulation for 5-level multilevel converter ( m 0.99 ) (a) output voltage waveform; (b) normalized FFT analysis of line-line voltage....................... 68 Figure 3.15: Control simulation for 7-level multilevel converter ( m 1.22 ) (a) output voltage waveform; (b) normali ...
Practical Strain Gage Measurements
... The bar in Figure 5 has a uniaxial tensile force, F, applied along the x-axis. If we assume the force to be uniformly distributed over the crosssectional area, A, the “average” stress on the plane of the section is F/A. This stress is perpendicular to the plane and is called NORMAL STRESS, . Express ...
... The bar in Figure 5 has a uniaxial tensile force, F, applied along the x-axis. If we assume the force to be uniformly distributed over the crosssectional area, A, the “average” stress on the plane of the section is F/A. This stress is perpendicular to the plane and is called NORMAL STRESS, . Express ...
file (7.8 MB, pdf)
... • The parallel R-C circuit time constant is typically 100 times the time period corresponding to the minimum frequency of operation. • The R-C time constant also controls the response time. • Slew rate is the primary specification that needs to be looked into while choosing the right opamp for the c ...
... • The parallel R-C circuit time constant is typically 100 times the time period corresponding to the minimum frequency of operation. • The R-C time constant also controls the response time. • Slew rate is the primary specification that needs to be looked into while choosing the right opamp for the c ...
STHVDAC-303
... The HVDAC outputs are directly controlled by programming the 8-bit DAC (DAC A, DAC B and DAC C) through the 3-wire serial interface. The DAC stages are driven from a reference voltage, generating an analog output voltage driving a high voltage amplifier supplied from the boost converter (see HVDAC b ...
... The HVDAC outputs are directly controlled by programming the 8-bit DAC (DAC A, DAC B and DAC C) through the 3-wire serial interface. The DAC stages are driven from a reference voltage, generating an analog output voltage driving a high voltage amplifier supplied from the boost converter (see HVDAC b ...
Application Manual for Power Supply Noise Suppression
... represented as a switch, and gate capacitance of the C-MOS transistor on the receiver side is represented as a capacitor connected to a ground. With a C-MOS digital IC, by this switch on the driver side connecting the signal line with either the power supply side (VDD) or the ground side (GND), the ...
... represented as a switch, and gate capacitance of the C-MOS transistor on the receiver side is represented as a capacitor connected to a ground. With a C-MOS digital IC, by this switch on the driver side connecting the signal line with either the power supply side (VDD) or the ground side (GND), the ...
Instruction Book M-3410A Intertie/Generator Protection Relay
... Target/Status Indicators and Controls The RELAY OK LED reveals proper cycling of the microprocessor. The DIAGNOSTIC LED provides indication of the error code (when flashing). The OSC TRIGGER LED indicates that the oscillograph has been triggered. The remaining eleven LEDs are used to indicate which ...
... Target/Status Indicators and Controls The RELAY OK LED reveals proper cycling of the microprocessor. The DIAGNOSTIC LED provides indication of the error code (when flashing). The OSC TRIGGER LED indicates that the oscillograph has been triggered. The remaining eleven LEDs are used to indicate which ...
MAX512/MAX513 Low-Cost, Triple, 8-Bit Voltage-Output DACs with Serial Interface _______________General Description
... MAX51_E_ _.......................................................-40°C to +85°C MAX51_MJD ....................................................-55°C to +125°C Storage Temperature Range .............................-65°C to +165°C Lead Temperature (soldering, 10sec) .............................+300°C ...
... MAX51_E_ _.......................................................-40°C to +85°C MAX51_MJD ....................................................-55°C to +125°C Storage Temperature Range .............................-65°C to +165°C Lead Temperature (soldering, 10sec) .............................+300°C ...
Effect of Strip Thickness - Electrical and Computer Engineering
... upper layer. Figure 2.25 shows the calculated capacitance per unit length of a microstrip line for various values of the lower dielectric layer thickness and fixed value of upper layer thickness. Even thin layers of low dielectric constant under the microstrip conductors reduce its capacitance signi ...
... upper layer. Figure 2.25 shows the calculated capacitance per unit length of a microstrip line for various values of the lower dielectric layer thickness and fixed value of upper layer thickness. Even thin layers of low dielectric constant under the microstrip conductors reduce its capacitance signi ...
Adapting KMS for Custom Hardware
... Deadtime is the delay between when the FlexTimer commands the PWM to switch and when the power device actually switches. See Figure 9 for an example. Deadtime must be factored into your design. A large power device cannot immediately switch between states. If the upper and lower legs of an inverter ...
... Deadtime is the delay between when the FlexTimer commands the PWM to switch and when the power device actually switches. See Figure 9 for an example. Deadtime must be factored into your design. A large power device cannot immediately switch between states. If the upper and lower legs of an inverter ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.