Download HIRF740中文资料

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HIRF740 中文资料
MICROELECTRONICS CORP.
Issued Date : 2005.09.01Revised Date : 2005.09.22Page No. : 1/4
Absolute Maximum Ratings
SymbolVDSSIDIDMVGS
Drain-Source Voltage
Drain
to
Current
(Continuous)(VGS@10V,
TC=25oC)Drain
to
Current
(Continuous)(VGS@10V, TC=100oC)Drain to Current (Pulsed)*1
Gate-to-Source Voltage (Continue)Total Power DissipationTO-220ABTO-220FPDerate
above 25°CTO-220ABTO-220FP
Single Pulse Avalanche Energy*2Avalanche Current*1
Repetitive Avalanche Energy*1Peak Diode Recovery*3
Operating Junction and Storage Temperature RangeMaximum Lead Temperature for
Soldering Purposes, 1.6mmfrom case for 10 seconds
Parameter
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Value400106.340±2074380.590.352010134-55 to 150300
UnitsVAAAVW
PD
W/°CmJAmJV/ns°C°C
EASIAREARdv/dtTJ,TstgTL
*1: Repetitive rating; pulse width limited by max. junction temperature*2: VDD=50V,
starting
Tj=25°C,
L=9.1mH,
IAS=10A*3http://www.mianfeiwendang.com/doc/cef543fcb62e9e5e09df8eb3:
RG=25?,
ISD≤10A,
di/dt≤120A/us, VDD≤V(BR)DSS, TJ≤150°C
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
SymbolV(BR)DSS
Characteristic
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)Drain-Source Leakage Current
(VDS=400V, VGS=0V)
Drain-Source Leakage Current (VDS=320V, VGS=0V, Tj=125°C)Gate-Source Leakage
Current-Forward (Vgsf=20V, VDS=0V)Gate-Source Leakage Current-Reverse (Vgsr=-20V,
VDS=0V)Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=6A)*4Forward Transconductance
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(VDS=50V, ID=6A)*4Input CapacitanceOutput Capacitance
Reverse Transfer CapacitanceTurn-on Delay TimeRise Time
Turn-off Delay TimeFall Time
Total Gate ChargeGate-Source ChargeGate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” frompackage to center
of die)
Internal
Source
(Meashttp://www.mianfeiwendang.com/doc/cef543fcb62e9e5e09df8eb3ured
drain lead 0.25” frompackage to source bond pad)
(VDS=320V, ID=10A, VGS=10V)*4(VDD=200V, ID=10A, RG=9.1?,RD=20?)*4
VDS=25V, VGS=0V, f=1MHz
--2-
Page No. : 2/4
Min.400--
Typ.-0.49------140033012014275024---4.57.5
Max.--25250100-10040.55
--------63932--
Inductance
from
the
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UnitVV/oCuAuAnAnAV?SpF
?V(BR)DSS/?TJBreakdown Voltage Temp. Coefficient (Reference to 25oC, ID=1mA)
IDSSIGSSFIGSSRVGS(th)RDS(on)gFSCissCossCrsstd(on)trtd(off)tfQgQgsQgdLDLS
5.8------------
ns
nC
nHnH
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Source-Drain Diode
**: Negligible, Dominated by circuit inductance
TO-220AB Dimension
Page No. : 3/4
TO-220FP Dimension
Important Notice:
? All rights are reserved. Reproduction in whole or in part is prohibited without
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http://www.mianfeiwendang.com/doc/cef543fcb62e9e5e09df8eb3the
prior
written
approval of HSMC.? HSMC reserves the right to make changes to its products without
notice.
? HSMC semiconductor products are not warranted to be suitable for use in Life-Support
Applications, or systems.
? HSMC assumes no liability for any consequence of customer product design,
infringement of patents, or application assistance.
Head Office And Factory:
? Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan
N. Rd. Taipei Taiwan R.O.C.Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
? Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan.
R.O.CTel: 886-3-5983621~5 Fax: 886-3-5982931
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%2. Reflow soldering
of surface-mount devicesPage No. : 4/4
Profile Feature
Average
ramp-up
rhttp://www.mianfeiwendang.com/doc/cef543fcb62e9e5e09df8eb3ate
(TL to TP)Preheat
- Temperature Min (Tsmin)- Temperature Max (Tsmax)- Time (min to max) (ts)Tsmax to
TL- Ramp-up RateTime maintained above:- Temperature (TL)- Time (tL)
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Peak Temperature (TP)Time within 5oC of actual PeakTemperature (tP)Ramp-down Rate
Time 25
oC to Peak Temperature3. Flow (wave) soldering (solder dipping)
Products
Pb devices.Pb-Free devices.
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Peak temperature245oC ±5oC260oC
0/-5oC
Dipping time5sec ±1sec5sec ±1sec
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