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金属的湿法刻蚀工艺配方
Etching Metal FilmsElectronics/MEMS materials etching sheet (pdf)
Wet Chemical Etching
(all ratios are by volume unless noted otherwise)Ag Al, Au Cr, Cu, Ni, Sb Ti
Aluminum
"metal etch" (3:3:1:1 H3PO4:HNO3:CH3COOH:H2O) 8.7
angstrom/sec@RT "metal etch" (3:3:1:1
H3PO4:HNO3:CH3COOH:H2O)
"Al fine line etch 1" (4:1:4:1 H3PO4:HNO3:CH3COOH:H2O) 30min/micron"Al fine line etch
2" (1:2 HCl:H2O)
"Al fast etch" (17:1:3 H3PO4:HNO3:CH3COOH:H2) ~5 min/micron
"metal etch" (3:3:1:1 H3PO4:HNO3:CH3COOH:H2O)
Chromium
"Cyantek CR-7s" (Perchloric based) 7 min/micron (24A/s new)
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"Cr acid etch" (1:1 HCl:glycerine) 12min/micron after depassivation
"Cr base etch" (1:3 [50gNaOH 100mlH2O]:[30g
K3Fe(CN)6 100mlH2O]) 1hr/micron
Gold
"Aqua Regia" (3:1 HCl:HNO3) ~1.5 seconds/micron
"Au mask etch" (10g KI, 2.5g I2, 100ml H2O) 1min/micron
Copper
150g
Shttp://www.wendangwang.com/doc/35acb3bcd89505cfbe87273aodium
persulfate:1000ml H2O ~20s/micron @ 45C
Use only as a last step outside of the microengineering lab. When free of
Fe, this solution is selective for Cu against Ni (added iron salts will causeNi
corrosion)
Nickel
"metal etch" (3:3:1:1 H3PO4:HNO3:CH3COOH:H2O)~15min/micron@RT with air exposure
every 15 seconds
Silver
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"dilute metal etch" (3:3:23:1 H3PO4:HNO3:CH3COOH:H2O)~10min/100A
"silver base etch" (1:1:4 NH4OH:H2O2:CH3OH) .36micron/min resist ok but rinse rapidly
after etching
Titanium
Titanium etch 2 (1:9 HF:H2O) 5s/micron@32C (really that fast??) note:Titanium etch
for 1 min sputtering 160W: 35s in 1%HF in DI.
RCA-1 ~100 min/micron
Dry Etching...under construction...
"Armin Kuebelbeck" , [email protected] There are several different Aluminium
etchants
know.
Most
of
them
are
based
on
Phosphoric
Acid
85%(about
60
http://www.wendangwang.com/doc/35acb3bcd89505cfbe87273ato 90 parts
per volume) and Nitric Acid 70% (about 2 to 10 parts per volume). Sometimes people
add Acetic Acid (about 10-30 parts per volume) for better wetting behaviour and lower
viskosity. Merck Corporation has about 10 different Aluminium etchants.
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